Origin of the hump anomalies in the Hall resistance loops of ultrathin SrRuO₃/SrIrO₃ multilayers

The proposal that very small N\'eel skyrmions can form in SrRuO$_3$/SrIrO$_3$ epitaxial bilayers and that the electric field-effect can be used to manipulate these skyrmions in gated devices strongly stimulated the recent research of SrRuO$_3$ heterostructures. A strong interfacial Dzyaloshinskii-Moriya interaction, combined with the breaking of inversion symmetry, was considered as the driving force for the formation of skyrmions in SrRuO$_3$/SrIrO$_3$ bilayers. Here, we investigated nominally symmetric heterostructures in which an ultrathin ferromagnetic SrRuO$_3$ layer is sandwiched between large spin-orbit coupling SrIrO$_3$ layers, for which the conditions are not favorable for the emergence of a net interfacial Dzyaloshinskii-Moriya interaction. Previously the formation of skyrmions in the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers was inferred from anomalous Hall resistance loops showing humplike features that resembled topological Hall effect contributions. Symmetric SrIrO$_3$/SrRuO$_3$/SrIrO$_3$ trilayers do not show hump anomalies in the Hall loops. However, the anomalous Hall resistance loops of symmetric multilayers, in which the trilayer is stacked several times, do exhibit the humplike structures, similar to the asymmetric SrRuO$_3$/SrIrO$_3$ bilayers. The origin of the Hall effect loop anomalies likely resides in unavoidable differences in the electronic and magnetic properties of the individual SrRuO$_3$ layers rather than in the formation of skyrmions.