Optical and Acoustic Phonons in Turbostratic and Cubic Boron Nitride Thin Films on Diamond Substrates

We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B-doped polycrystalline and single-crystalline diamond (001) and (111) substrates. The characteristics of different types of phonons were determined using Raman and Brillouin-Mandelstam light scattering spectroscopies. The atomic structure of the films was determined using high-resolution transmission electron microscopy (HRTEM) and correlated with the Raman and Brillouin-Mandelstam spectroscopy data. The HRTEM analysis revealed that the cubic boron nitride thin films consisted of a mixture of c-BN and t-BN phases, with c-BN being the dominant phase. It was found that while visible Raman spectroscopy provided information for characterizing the t-BN phase, it faced challenges in differentiating the c-BN phase either due to the presence of high-density defects or the overlapping of the Raman features with those from the B-doped diamond substrates. In contrast, Brillouin-Mandelstam spectroscopy clearly distinguishes the bulk longitudinal and surface acoustic phonons of the c-BN thin films grown on diamond substrates. Additionally, the angle-dependent surface Brillouin-Mandelstam scattering data show the peaks associated with the Rayleigh surface acoustic waves, which have higher phase velocities in c-BN films on diamond (111) substrates. These findings provide valuable insights into the phonon characteristics of the c-BN and diamond interfaces and have important implications for the thermal management of electronic devices based on ultra-wide-band-gap materials.