Tuning proximity-induced spin-orbit coupling in graphene/WSe₂ heterostructures

Recently, proximity-induced spin-orbit coupling (SOC) has been observed in heterostructures consisting of monolayer graphene (ML-G) and transition metal dichalcogenides (TMDCs) such as WSe$_{2}$. Successful tuning of SOC in graphene/WSe$_{2}$ heterostructures by applying mechanical pressure and electric fields was also demonstrated in previous studies. In addition, theoretical calculations predicted a strong dependence of the proximity-induced SOC on the twist angle between graphene and TMDC. Here, we put these predictions to experimental test in ML-G/ML-WSe$_{2}$/hBN-heterostructures, where the twist angle is determined by aligning fractured edges, and by crystallographic etching of graphene. By performing weak anti-localization measurements, we determine the strength of the Rasbha-type SOC ($\lambda_\mathrm{R}$) and the valley-Zeeman-type SOC ($\lambda_\mathrm{VZ}$). Our experiments confirm a strong twist angle dependence of the proximity-induced SOC in agreement with theoretical predictions. Finally, we demonstrate the tunability of the SOC strength via mechanical pressure, which is in agreement with earlier findings.