Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field
classification
❄️ cond-mat.mes-hall
keywords
electronanisotropicfieldgaasmagneticmagnetoresistanceparallelpositive
read the original abstract
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.
This paper has not been read by Pith yet.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.