arxiv: cond-mat/0611269 · v2 · submitted 2006-11-10 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

K. Hamaya , S. Masubuchi , M. Kawamura , T. Machida , M. Jung , K. Shibata , K. Hirakawa , T. Taniyama

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S. Ishida Y. Arakawa

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classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci

keywords singleferromagneticinasleadsquantumself-assembledspintransport

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We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

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Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

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