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Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
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Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
classification
cond-mat.mes-hall
cond-mat.mtrl-sci
keywords
singleferromagneticinasleadsquantumself-assembledspintransport
read the original abstract
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
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