Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

2); (2) IMEC; (3)CNRS-LCMI; Belgium; E. B. Olshanetsky (1) A. E. Plotnikov (1) J. C. Portal (3) ((1) Institute of Semiconductor Physics; France); Grenoble; K. Maex (2); M. R. Baklanov (1; Novosibirsk

arxiv: cond-mat/9907247 · v1 · pith:MKAPXRJWnew · submitted 1999-07-18 · ❄️ cond-mat.supr-con · cond-mat.mes-hall

Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

Z. D. Kvon (1) , T. I. Baturina (1) , R. A. Donaton (2) , M. R. Baklanov (1 , 2) , K. Maex (2) , E. B. Olshanetsky (1) A. E. Plotnikov (1) J. C. Portal (3) ((1) Institute of Semiconductor Physics , Novosibirsk

show 6 more authors

Russia (2) IMEC Belgium (3)CNRS-LCMI Grenoble France)

This is my paper

classification ❄️ cond-mat.supr-con cond-mat.mes-hall

keywords junctionssuperconductingandreevfilmmetalnormalproximitywires

0 comments

read the original abstract

Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the normal metal wires of two different lengths L=1.5 $\mu$m and L=6$\mu$m and the same widths W=0.3$\mu$m are studied. Zero bias resistance dip related to pair current proximity effect is observed for all junctions whereas the subharmonic energy gap structure originating from phase coherent multiple Andreev reflections have occurs only in the SNS junctions with short wires.

This paper has not been read by Pith yet.

Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

discussion (0)