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Integrity report for A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al_(0.3)Ga_(0.7)As heterostructure with Mn δ-doping

A machine-verified record of the checks Pith has run against this paper: detector runs, findings, signed bundle events, and canonical identifiers.

arXiv:0802.3863

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Paper page arXiv integrity.json

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Signed record

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