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Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4

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arxiv 1907.05119 v1 pith:CJ7LDBTD submitted 2019-07-11 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci
keywords topologicalelectronicmnbi2te4structurestemperatureclearlycompoundsconditions
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Topological quantum materials coupled with magnetism can provide a platform for realizing rich exotic physical phenomena, including quantum anomalous Hall effect, axion electrodynamics and Majorana fermions. However, these unusual effects typically require extreme experimental conditions such as ultralow temperature or sophisticate material growth and fabrication. Recently, new intrinsic magnetic topological insulators were proposed in MnBi2Te4-family compounds - on which rich topological effects could be realized under much relaxed experimental conditions. However, despite the exciting progresses, the detailed electronic structures observed in this family of compounds remain controversial up to date. Here, combining the use of synchrotron and laser light sources, we carried out comprehensive and high resolution angle-resolved photoemission spectroscopy studies on MnBi2Te4, and clearly identified its topological electronic structures including the characteristic gapless topological surface states. In addition, the temperature evolution of the energy bands clearly reveals their interplay with the magnetic phase transition by showing interesting differences for the bulk and surface states, respectively. The identification of the detailed electronic structures of MnBi2Te4 will not only help understand its exotic properties, but also pave the way for the design and realization of novel phenomena and applications.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Exchange Bias and Quantum Anomalous Hall Effect in the MnBi2Te4-CrI3 Heterostructure

    cond-mat.mtrl-sci 2019-08 conditional novelty 6.0 of 10

    DFT calculations predict that CrI3 proximity induces a 40 meV exchange bias in MnBi2Te4 films, enabling zero-field QAH states with Chern numbers 1 and 3.

  2. Flat Chern Band From Twisted Bilayer MnBi$_2$Te$_4$

    cond-mat.mes-hall 2019-08 conditional novelty 6.0 of 10

    A twisted bilayer of MnBi2Te4 is predicted to host an isolated flat Chern band at about one degree twist, offering a time-reversal-broken moire platform for correlated topological states.

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