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NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications

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arxiv 2404.05528 v1 pith:I5OUJIYW submitted 2024-04-08 physics.app-ph

Min Wang , Zhengyi Hou , Chenyi Wang , Zhengjie Yan , Shixing Li , Ao Du , Wenlong Cai , Jinhao Li
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Hongchao Zhang Kaihua Cao Kewen Shi Bi Wang Yuanfu Zhao Qingyi Xiang Zhaohao Wang Weisheng Zhao
This is my paper · ORCID
classification physics.app-ph
keywords nand-likeselectivityapplicationsapproximatedownerror-tolerantlevellow-power
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We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by numerical calculation workflow. System-level power consumption is evaluated in the 512 KB last-level cache according to 5 quality levels. Error-tolerant applications, such as image processing, alleviate the demand for selectivity down to the 5E-2 level, leading to 54% ~ 61% energy-saving. Our proposal paves the novel and suitable path for high-density and low-power NAND-like SOT-MRAM.

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