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Paper Citation Record · LEDGER

Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models

As of 10 August 2026, this Paper Citation Record lists 0 of 0 outbound references and 3 inbound Pith citation observations for arXiv:2409.19315.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2409.19315 v2

Coverage vector

measured 0 of 0 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links

measured 3 of 3 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-10T06:31:04.303077+00:00

measured 3 of 3 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-07-04T00:48:46.936506Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: arxiv_reference, observed 2026-07-04T00:49:17.270769Z

Reference resolution

0 of 0 outbound references displayed

  • verified exact0
  • verified fuzzy0
  • unresolved0
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

No outbound reference observations are available for this paper version.

Pith citing papers

Observation 51e51882-3f4c-43bd-983b-44aaa632b00d · inbound

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors cites this paper.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models

Reference 10

Resolution
verified exact
arxiv_id, observed 2026-06-29T09:53:17.529661Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

source=pdf_text observed=2026-06-29T09:46:51.255151Z digest=sha256:b54242ed3478291016b9a2fc472368e427c3a77a360f70ae3b640112e56392af

Observation 8f4bf482-4122-4876-8002-d8ca71669e07 · inbound

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors cites this paper.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models

Reference 10

Resolution
verified exact
arxiv_id, observed 2026-06-30T11:34:38.196448Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

source=pdf_text observed=2026-06-30T11:25:45.532130Z digest=sha256:baef400583eb6045147c708514b6b05418c664980d01e752f056a92b1158942f

Observation 0342b16f-683b-472f-9a7c-06d6b0d94eb8 · inbound

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors cites this paper.

FCDC: Nonvolatile Charge-Domain Attention with HZO Ferroelectric Capacitors Analog In-Memory Computing Attention Mechanism for Fast and Energy-Efficient Large Language Models

Reference 10

Resolution
verified exact
arxiv_id, observed 2026-07-04T00:49:17.275069Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-10T06:31:04.303077+00:00.

source=pdf_text observed=2026-07-04T00:48:46.936506Z digest=sha256:f109f7a1573aa26191c034df97935c71d94b7a023093251f2fd1be187d88a444