Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform

Bartos Chmielak; Cedric Kreusel; Federico Fabrizi; Manuel Runkel; Maryam Mohammadi; Max C. Lemme; Naho Kurahashi; Piotr J. Cegielski; Saeed Goudarzi; Stephan Suckow

REVIEW 3 major objections 4 minor 8 references

Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform

T0 review · 3 major / 4 minor · reviewed 2026-08-11 · deepseek-v4-flash

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Pith's one-line read This paper reports a first-order distributed-feedback CsPbBr3 perovskite laser that operates at room temperature, emits at 540 nm, and is monolithically integrated on a silicon nitride waveguide.

desk verdict Credible integration demo, but the lasing evidence needs one more round of controls before I'd call the DFB claim fully proven. read the letter →

arxiv 2412.15245 v1 pith:I566JK6O submitted 2024-12-13 physics.app-ph cond-mat.mtrl-sci

Federico Fabrizi , Piotr J. Cegielski , Saeed Goudarzi , Naho Kurahashi , Manuel Runkel , Cedric Kreusel , Bartos Chmielak , Stephan Suckow

show 4 more authors

Thomas Riedl Surendra B. Anantharaman Maryam Mohammadi Max C. Lemme

This is my paper · ORCID

classification physics.app-phcond-mat.mtrl-sci

keywords CsPbBr3perovskitedistributedfeedbacklasersiliconnitridewaveguidemonolithicintegrationgreenroom-temperaturelasingplanarhotpressingsolutionprocessing

verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports the first room-temperature distributed feedback (DFB) laser made from a solution-processed cesium lead bromide (CsPbBr3) thin film that is monolithically integrated onto a silicon nitride waveguide chip. The authors show that recrystallizing the perovskite by planar hot pressing and patterning it with standard top-down lithography does not degrade its gain properties, and that a first-order Bragg grating etched into the waveguide provides enough feedback to make the film lase in the green at 540 nm. The device has a lasing threshold of 0.755 mJ cm−2 under 0.3 ns pump pulses, which matters because the green spectral region is hard for conventional III-V lasers and because monolithic integration avoids the expensive bonding and epitaxy steps used today. If the result holds, solution-processed perovskites become a realistic gain medium for on-chip green lasers in silicon photonics.

What carries the argument

The central mechanism is a first-order distributed feedback (DFB) grating: a periodic modulation of the silicon nitride waveguide that acts as the laser cavity, with the grating period Λ set by the Bragg condition λB = 2Λneff for order m = 1. The perovskite film is the gain medium, and the optical mode lives mostly in the silicon nitride so that light is amplified through evanescent coupling to the perovskite. The supporting fabrication steps are planar hot pressing, which recrystallizes the film and removes pinholes, and a top-down reactive-ion etching process that patterns the perovskite without harming its emission.

What would settle it

Fabricate a nominally identical device with a 138 nm grating and pump it with 0.3 ns, 355 nm pulses; if a narrow line near 540 nm with FWHM below 1 nm and a superlinear intensity kink near 0.755 mJ cm−2 do not appear, the room-temperature lasing claim fails. A simpler check is to measure the passive Bragg resonance of the grating before perovskite deposition and confirm it sits within the perovskite gain band.

Watch

Extended reading notes

Core claim

A planar hot-pressed CsPbBr3 perovskite film, about 90 nm thick, was placed on a silicon nitride rib waveguide that contains a quarter-wave-shifted first-order grating with a 138 nm period and a 25 nm etch depth. Under 355 nm, 0.3 ns pulses at room temperature, the device emits a single narrow line at 540 nm with a full width at half maximum of about 0.5 nm, and the output intensity grows superlinearly above a threshold of 0.755 mJ cm−2. The same film shows amplified spontaneous emission with a threshold of 14.5 µJ cm−2 before patterning and 8.9 µJ cm−2 after patterning, and the mode is guided mainly in the silicon nitride with roughly 24% overlap with the perovskite. The authors interpret this as lasing from a first-order DFB cavity in which the perovskite provides gain via the evanescent field of the waveguide mode.

Load-bearing premise

The lasing wavelength depends on the simulated effective refractive index of the waveguide mode and the ellipsometrically measured perovskite refractive index; if those numbers are off, the grating resonance shifts away from the 540 nm gain region and the device may not lase at the designed period.

Editorial extensions

If this is right

If correct, this gives silicon photonic circuits a path to green on-chip lasers that avoids III-V semiconductor bonding or epitaxial growth.
The same top-down patterning flow should work for other perovskite compositions, potentially covering other colors in the visible range.
Because lasing was achieved with 0.3 ns pulses, shorter femtosecond pumping could lower the measured threshold further, as the authors note.
The evanescent-coupling design means the perovskite does not need to be the main waveguide, relaxing thickness and patterning constraints.
The stability of the perovskite's emission after patterning suggests the integration process is compatible with commercial silicon manufacturing.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

A natural next test the authors do not report is lifetime and repeated-pumping data; if the perovskite degrades under sustained operation, the practical claim for commercial PICs weakens.
The threshold depends on aligning the Bragg resonance to the gain peak; measuring the passive grating resonance directly (without perovskite) would confirm how much margin the 134–141 nm period sweep provides.
The 24% mode overlap suggests substantial headroom: thinning the perovskite or tuning the spacer could lower thresholds further, at the cost of weaker gain.
The approach may extend to electrically pumped devices if the perovskite layer can also be contacted, but the current work is purely optical pumping, and electrical injection is a significant open step.

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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Desk Editor's Note

read the letter

The genuinely new thing here is the combination: a first-order grating DFB cavity etched into a Si3N4 waveguide, with a PHP-CsPbBr3 film patterned on top and lasing at 540 nm at room temperature. Prior work had PHP films with ASE and VCSELs, and other groups had perovskite lasers on Si3N4, but this specific cavity geometry and material pairing is new, and the fabrication story is careful. The material characterization is a real strength: XRD, PL maps, AFM roughness, and the ASE threshold before and after patterning are all measured and consistent. They also transparently note the ns-pulse penalty on threshold, which is the right way to report it.

The soft spot is exactly what the stress test flags: the lasing evidence rests on one device, one grating period, and the standard linewidth-collapse plus threshold-kink diagnostics. Those are necessary but not sufficient. A grating can spectrally filter ASE and produce a narrow peak with a superlinear input-output curve, especially when you pump a 350 µm spot directly on the perovskite and collect through a multimode fiber from a hand-cleaved edge. The authors fabricated periods from 134 to 141 nm but only show data for 138 nm. If the resonance tracks the Bragg condition across periods, that would be strong evidence of feedback lasing; if only one period works, that is interesting but needs repeatability. A no-grating control, or a period far off resonance, would also help. The absence of polarization or near-field data means we cannot tell whether the collected light is actually in the Si3N4 waveguide mode. These are all addressable experimentally, and the paper would be much stronger with them.

The neff modeling concern is real but secondary; even a perfect Bragg design does not establish that the observed line is feedback-dominated rather than filtered ASE. That is the load-bearing gap.

This is a solid experimental demonstration with a clear claim that outruns its evidence base. The work deserves peer review because the integration technology and materials work are substantial, and the question is well-defined. I would send it to review with a request for period-tuning data, a control, and device statistics. If those come back positive, the result will be a solid addition to the green perovskite laser literature.

Referee Report

3 major / 4 minor

Summary. The manuscript reports the monolithic integration of a planar hot-pressed CsPbBr3 thin film on a silicon nitride waveguide platform with a first-order distributed feedback grating, and claims room-temperature lasing at 540 nm with a threshold of 0.755 mJ cm−2. The authors document the material quality before and after patterning (roughness, grain size, PL wavelength, XRD), simulate the waveguide mode and grating design, and present emission spectra showing linewidth narrowing from about 14.5 nm to 0.5 nm with a superlinear input-output curve. The central claim is that this narrow peak is a DFB laser mode of the integrated waveguide, enabled by evanescent coupling between the perovskite gain and the Si3N4-guided mode.

Significance. If confirmed, the result would be a meaningful advance for silicon photonics, since solution-processed CsPbBr3 could provide room-temperature green emission on a CMOS-compatible Si3N4 platform without III-V bonding or epitaxy. The paper's strengths include the careful material characterization (AFM, XRD, PL maps), the low ASE threshold of the PHP-CsPbBr3 film, and a top-down patterning process that preserves the film's optical properties. However, the lasing evidence is incomplete: the central claim rests on a single device with no period-tuning data, no no-grating control, and no verification that the collected narrow line is the TE waveguide mode. These omissions leave grating-filtered ASE or random lasing as plausible alternatives, so the significance of the demonstration cannot be fully assessed without additional measurements.

major comments (3)

[Results and discussion, Fig. 4; grating design paragraph (p. 5)] The lasing claim is based on a single grating period (138 nm) and a single device. The authors fabricated periods from 134 to 141 nm but do not report the emission wavelengths of the other periods or show that the peak tracks the Bragg condition. Without this period-tuning data, or a control device without a grating or far off resonance, the narrow 0.5 nm line at 540 nm could be grating-filtered ASE rather than feedback-dominated DFB lasing. This control is essential given the large ratio of the claimed lasing threshold (0.755 mJ cm−2) to the ASE threshold (8.9 µJ cm−2).
[Laser Characterization (p. 9) and Fig. 4] The output is collected with a multimode fiber at a hand-cleaved edge, and no polarization or spatial mode characterization is provided. Because the 350 µm pump spot excites the perovskite slab directly, the collected signal could include surface-emitted or slab-guided light that is spectrally filtered by the grating. To support the claim that the narrow line is a waveguide mode, the authors should show a near-field facet image, polarization analysis, or a coupling dependence that distinguishes waveguide-guided emission from free-space or slab emission.
[Fig. 4d and Experimental Section, Laser Characterization] The threshold is extracted from a single input-output curve with no error bars, no shot-to-shot variation, and no device-to-device statistics. Given that the paper's central quantitative claim is the threshold value of 0.755 mJ cm−2, the authors should provide repeated measurements on multiple nominally identical devices and an uncertainty estimate for the threshold. This is particularly important because the linewidth collapse is shown at only two fluence points above threshold (0.839 and 0.935 mJ cm−2).

minor comments (4)

[Abstract and main text (p. 1)] There are typographical errors in the perovskite formula: 'CsPbBr$_}$' appears in the abstract and in the intro, and 'CsPbBr 3' with irregular spacing appears throughout; these should be corrected to CsPbBr3.
[Results and discussion (p. 4); Fig. 2] The grating is introduced as a 'quarter wavelength shifted (QWS) first-order grating,' but the QWS concept is never defined, and no simulated or measured mode spectrum is shown. Since a uniform first-order grating would typically produce two modes at the stop-band edges, a single lasing line needs explanation; please clarify the design and its role in the observed single-mode emission.
[Experimental Section, Perovskite Deposition (p. 7)] The spin-coating parameters are given as '4000 rpm, 120 s, and 11 s,' which is ambiguous; please specify spin speed, duration, and acceleration, or a reference to a previously used recipe.
[Experimental Section, Laser Characterization (p. 9)] The sentence 'The spectra of the PHP-CsPbBr3 lasers, averaged over 10 s, were recorded' appears in the main text (p. 6) but not in the Experimental section; please clarify the integration time and whether the averaging is over multiple pulses or a single long integration.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the central lasing claim rests on direct spectral measurements and a measured threshold, not on the simulated design inputs.

full rationale

The paper is an experimental demonstration, not a derivation. The DFB grating period is designed from the Bragg condition using an ellipsometrically measured perovskite refractive index and a simulated effective index, but this design step is an input to fabrication, not a source of the lasing conclusion. The lasing claim is supported by measured emission spectra that narrow from approximately 14.5 nm FWHM to 0.5 nm under increasing pump fluence and by a superlinear input-output curve whose threshold is extracted from intersecting two linear fits. These are direct device measurements and are not used as inputs to the simulation that set the grating period. The authors fabricated a range of grating periods as insurance against refractive-index uncertainty and report the period that lased; this is a design scan, not a fitted parameter renamed as a prediction. Self-citations to prior work on planar hot-pressing (ref. 33) and top-down patterning (refs. 30, 34) are methodological; the paper independently measures ASE thresholds, PL stability, film roughness, and the final lasing behavior, so the central claim does not reduce to those citations. The absence of a period-tuning series or a no-grating control is a legitimate concern about evidence sufficiency for identifying feedback-dominated lasing, but it is not a circularity of the kind defined here. No equation or fitted parameter is equivalent by construction to the claimed result.

Assumptions & free parameters 3 free parameters · 4 assumptions · 0 invented entities

No new physical entities are introduced. The central demonstration rests on standard DFB theory, FDTD modeling, and the identification of lasing from spectral narrowing and threshold behavior. The grating period, film thickness, and etch depth are engineering choices informed by simulation, not fitted model parameters.

free parameters (3)

Grating period for the lasing device = 138 nm (of 134-141 nm fabricated range)
Chosen from a simulated effective index to satisfy the first-order Bragg condition; a range was fabricated and the successful period is reported. This is a design selection, not a model fit.
PHP-CsPbBr3 film thickness = 90 nm after hot pressing
Chosen as the minimum thickness achievable by the solution process while preserving about 24 percent mode overlap with the Si3N4 waveguide; informed by FDTD simulations.
Grating etch depth = 25 nm
Selected from simulations comparing 25 nm and 50 nm etch depths to minimize scattering losses in the distributed resonator.

assumptions (4)

standard math First-order Bragg condition lambda_B = 2*Lambda*neff/m (m=1) defines the DFB resonance.
Used in the Results section to set the grating period from the simulated effective index; standard coupled-mode theory for DFB lasers.
domain assumption FDTD simulations in Lumerical accurately predict mode overlap, grating reflectivity, and scattering losses.
Used to select the 90 nm perovskite thickness, 25 nm etch depth, and to compute neff; no independent experimental confirmation of the simulated mode profile is given beyond the lasing outcome.
domain assumption Spectral linewidth collapse from about 14.5 nm to 0.5 nm plus a superlinear output-power increase identifies lasing.
Standard laser diagnostics; the paper does not provide second-order correlation or spatial coherence measurements, so the identification rests on spectral narrowing and a threshold kink.
domain assumption The patterned PHP-CsPbBr3 retains sufficient gain after integration.
Supported by ASE threshold of 8.9 uJ/cm2 after patterning, but the gain under the actual device geometry (90 nm film, 50 nm SiO2 spacer) is not directly measured.

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Cite this review

Pith. "Pith review of Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform." pith.science (2026). https://pith.science/paper/I566JK6O

@misc{pith2026241215245,
  author       = {Pith},
  title        = {Pith review of: Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/I566JK6O}},
  note         = {Machine review of arXiv:2412.15245}
}

abstract

Silicon photonic integrated circuits (PICs) require cost-effective laser sources that can be monolithically integrated. The low cost and low-temperature solution processability of metal halide perovskites (MHPs) make them attractive alternatives to established III-V compound semiconductors for on-chip laser sources in PICs. Cesium lead bromide (CsPbBr$_3$) perovskites are emerging materials for green light-emitting diodes and lasers. To date, amplified spontaneous emission (ASE) at room temperature has been frequently achieved in CsPbBr$_3$ thin films, while reports on lasing are more limited. Here, we demonstrate a first-order grating distributed feedback (DFB) CsPbBr$_3$ thin-film laser operating at room temperature. Planar hot-pressed (PHP)-CsPbBr$_}$, with a low ASE threshold of 14.5 $\mu$Jcm$^{-2}$ under 0.3 nanosecond (ns) pump pulses, was monolithically integrated into a silicon nitride (Si$_3$N$_4$) waveguide platform via a compatible top-down patterning process. The first-order grating DFB PHP-CsPbBr$_3$ thin-film laser operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a lasing threshold of 0.755 mJcm$^{-2}$ at room temperature. This work marks a significant step toward utilizing MHPs for on-chip green lasers in PICs for commercial applications.

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

8 extracted references · 5 canonical work pages

[1]

E.; Hochberg, M.; Soref, R.; Shastri, B

(1) Shekhar, S.; Bogaerts, W.; Chrostowski, L.; Bowers, J. E.; Hochberg, M.; Soref, R.; Shastri, B. J. Roadmapping the next Generation of Silicon Photonics. Nat Commun 2024, 15 (1),

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https://doi.org/10.3389/fphy.2015.00037. (4) Thomson, D.; Zilkie, A.; Bowers, J. E.; Komljenovic, T.; Reed, G. T.; Vivien, L.; Marris-Morini, D.; Cassan, E.; Virot, L.; Fédéli, J.-M.; Hartmann, J.-M.; Schmid, J. H.; Xu, D.-X.; Boeuf, F.; O’Brien, P.; Mashanovich, G. Z.; Nedeljkovic, M. Roadmap on Silicon Photonics. J. Opt. 2016, 18 (7), 073003. https://do...

work page arXiv 2015
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(9) Tang, M.; Park, J.-S.; Wang, Z.; Chen, S.; Jurczak, P.; Seeds, A.; Liu, H

https://doi.org/10.1186/s43593-022-00027-x. (9) Tang, M.; Park, J.-S.; Wang, Z.; Chen, S.; Jurczak, P.; Seeds, A.; Liu, H. Integration of III-V Lasers on Si for Si Photonics. Progress in Quantum Electronics 2019, 66, 1–18. https://doi.org/10.1016/j.pquantelec.2019.05.002. (10) Manser, J. S.; Christians, J. A.; Kamat, P. V. Intriguing Optoelectronic Proper...

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[19]

Green Gap

https://doi.org/10.1117/12.2275871. (28) Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J. Towards Large Size Substrates for III-V Co-Integration Made by Direct Wafer Bonding on Si. APL Material...

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(2) Tran, M

https://doi.org/10.1038/s41467-024-44750-0. (2) Tran, M. A.; Huang, D.; Komljenovic, T.; Peters, J.; Malik, A.; Bowers, J. E. Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics. Applied Sciences 2018, 8 (7),

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(3) Doerr, C

https://doi.org/10.3390/app8071139. (3) Doerr, C. R. Silicon Photonic Integration in Telecommunications. Front. Phys. 2015,

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(35) Tatarinov, D

https://doi.org/10.48550/ARXIV.2411.15286. (35) Tatarinov, D. A.; Anoshkin, S. S.; Tsibizov, I. A.; Sheremet, V.; Isik, F.; Zhizhchenko, A. Y.; Cherepakhin, A. B.; Kuchmizhak, A. A.; Pushkarev, A. P.; Demir, H. V.; Makarov, S. V. High‐ Quality CsPbBr3 Perovskite Films with Modal Gain above 10 000 Cm−1 at Room Temperature. Advanced Optical Materials 2023, ...

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Pith tools

Reviewed August 11, 2026 · model on record in the stance chip above.

[1] [1]

E.; Hochberg, M.; Soref, R.; Shastri, B

(1) Shekhar, S.; Bogaerts, W.; Chrostowski, L.; Bowers, J. E.; Hochberg, M.; Soref, R.; Shastri, B. J. Roadmapping the next Generation of Silicon Photonics. Nat Commun 2024, 15 (1),

work page 2024

[2] [3]

(4) Thomson, D.; Zilkie, A.; Bowers, J

https://doi.org/10.3389/fphy.2015.00037. (4) Thomson, D.; Zilkie, A.; Bowers, J. E.; Komljenovic, T.; Reed, G. T.; Vivien, L.; Marris-Morini, D.; Cassan, E.; Virot, L.; Fédéli, J.-M.; Hartmann, J.-M.; Schmid, J. H.; Xu, D.-X.; Boeuf, F.; O’Brien, P.; Mashanovich, G. Z.; Nedeljkovic, M. Roadmap on Silicon Photonics. J. Opt. 2016, 18 (7), 073003. https://do...

work page arXiv 2015

[3] [5]

(9) Tang, M.; Park, J.-S.; Wang, Z.; Chen, S.; Jurczak, P.; Seeds, A.; Liu, H

https://doi.org/10.1186/s43593-022-00027-x. (9) Tang, M.; Park, J.-S.; Wang, Z.; Chen, S.; Jurczak, P.; Seeds, A.; Liu, H. Integration of III-V Lasers on Si for Si Photonics. Progress in Quantum Electronics 2019, 66, 1–18. https://doi.org/10.1016/j.pquantelec.2019.05.002. (10) Manser, J. S.; Christians, J. A.; Kamat, P. V. Intriguing Optoelectronic Proper...

doi:10.1186/s43593-022-00027-x 2019

[4] [19]

Green Gap

https://doi.org/10.1117/12.2275871. (28) Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J. Towards Large Size Substrates for III-V Co-Integration Made by Direct Wafer Bonding on Si. APL Material...

work page doi:10.1117/12.2275871

[5] [751]

(2) Tran, M

https://doi.org/10.1038/s41467-024-44750-0. (2) Tran, M. A.; Huang, D.; Komljenovic, T.; Peters, J.; Malik, A.; Bowers, J. E. Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics. Applied Sciences 2018, 8 (7),

doi:10.1038/s41467-024-44750-0

[6] [1139]

(3) Doerr, C

https://doi.org/10.3390/app8071139. (3) Doerr, C. R. Silicon Photonic Integration in Telecommunications. Front. Phys. 2015,

work page doi:10.3390/app8071139 2015

[7] [2024]

(35) Tatarinov, D

https://doi.org/10.48550/ARXIV.2411.15286. (35) Tatarinov, D. A.; Anoshkin, S. S.; Tsibizov, I. A.; Sheremet, V.; Isik, F.; Zhizhchenko, A. Y.; Cherepakhin, A. B.; Kuchmizhak, A. A.; Pushkarev, A. P.; Demir, H. V.; Makarov, S. V. High‐ Quality CsPbBr3 Perovskite Films with Modal Gain above 10 000 Cm−1 at Room Temperature. Advanced Optical Materials 2023, ...

work page doi:10.48550/arxiv.2411.15286

[8] [5757]

(18) Zhu, P.; Zhu, J

https://doi.org/10.1038/ncomms6757. (18) Zhu, P.; Zhu, J. Low‐dimensional Metal Halide Perovskites and Related Optoelectronic Applications. InfoMat 2020, 2 (2), 341–378. https://doi.org/10.1002/inf2.12086. (19) Apurba, I. K. G. G.; Islam, Md. R.; Rahman, Md. S.; Rahman, Md. F.; Park, J. Tuning the Physical Properties of Inorganic Novel Perovskite Material...

doi:10.1038/ncomms6757 2020