REVIEW 4 major objections 6 minor 3 cited by
Optical spin readout of a silicon color center in the telecom L-band
T0 review · 4 major / 6 minor · reviewed 2026-08-08 · deepseek-v4-flash
Pith's one-line read This paper claims that the C center, a carbon-oxygen defect in silicon with a zero-phonon line at 1571 nm, provides the first optically detected spin readout in the telecom L-band, driven by microwave transitions in its excited triplet…
desk verdict First ODMR of the C center in silicon—a plausible L-band spin-photon interface, but the defect assignment needs a control sample before I'd call it airtight. read the letter →
The pith
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
The reading
What carries the argument
The central mechanism is optically detected magnetic resonance through the $C_T$ spin-triplet excited state of the C center, an interstitial carbon-oxygen pair defect whose zero-field splitting parameters are $D/h = 987$ MHz and $E/h = 22$ MHz. The triplet's $m_s=0$ sublevel decays non-radiatively to the ground state in more than 1.4 ms, while the $m_s=\pm1$ sublevels take more than 10 ms; resonant microwaves transfer population from $m_s=0$ to the longer-lived $m_s=\pm1$ states, trapping carriers and reducing the 1571 nm photoluminescence. The ODMR readout is the difference in photoluminescence intensity with and without resonant microwaves, measured by lock-in detection, and pulsed RF excitation mitigates a background from microwave-induced free-carrier heating.
What would settle it
Run an identically annealed and proton-irradiated control sample that received no carbon implantation through the same ODMR sequence: if the 965 and 1009 MHz dips persist, the assignment to C-center spins is wrong.
Extended reading notes
Core claim
The paper's central claim is that the C center, a carbon-oxygen interstitial pair made by carbon implantation, annealing, and proton irradiation, has an optically readable spin state in an ensemble. Under 1064 nm or 1310 nm excitation, spectrally filtering the photoluminescence to the C0 line at 1571 nm reveals two microwave resonances at 965 and 1009 MHz at zero magnetic field, interpreted as the longitudinal and transverse zero-field splittings $D/h = 987$ MHz and $E/h = 22$ MHz of an $S=1$ triplet excited state ($C_T$) that lies 2.64 meV below the C0 level. The mechanism is spin-dependent non-radiative decay: the $m_s=0$ sublevel returns to the ground state in more than 1.4 ms, whereas the $m_s=\pm1$ sublevels take more than 10 ms, so resonant microwaves that pump population into $m_s=\pm1$ trap carriers and lower the 1571 nm emission. Magnetic-field-dependent measurements show anisotropic splitting consistent with multiple quantization axes and a tensorial g-factor. The paper concludes that the C center is the first spin-optical interface in the telecom L-band, validating the theoretical prediction of an L-band emitter with quantum memory in silicon.
Load-bearing premise
The central claim stands or falls on whether the two microwave dips come from spin transitions in the C center's own triplet state rather than from some other defect, from the cyclotron-resonance background, or from microwave heating.
Editorial extensions
If this is right
- The C center can be read out at 1571 nm, so spin-state information is available directly in the L-band without frequency conversion.
- Both the C0 (1571 nm) and C1 (1560 nm) lines show the same microwave resonances, giving two telecom channels for spin readout.
- The anisotropy of the magnetic-field splitting provides a way to identify quantization axes in ensembles, and the complexity should reduce when scaling to single defects.
- Because the C center ground state is a singlet, nearby nuclear spins are magnetically isolated while the defect is in the ground state, which supports using 13C nuclei as long-lived quantum memories.
- The measured zero-field splittings deviate from theoretical values, indicating that vibrational effects must be included in a complete model of the C center's spin physics.
Reading between the lines
- With single-defect confirmation, the same pulsed-RF protocol would likely transfer to other silicon defects that have spin-dependent non-radiative decay paths, expanding the set of telecom-band spin-photon interfaces.
- If the non-magnetic singlet ground state indeed shields nearby nuclear spins from magnetic noise, the practical quantum memory would live in those nuclei rather than in the defect's own electron spin; a nuclear-spin coherence measurement under repeated optical pumping would test that directly.
- The measured transverse splitting of 22 MHz means the zero-field ODMR frequency shifts with magnetic-field orientation, so an oriented ensemble of C centers could serve as a vector field sensor once the g-tensor axes are mapped.
- Because 1310 nm excitation already produces the C0 emission, a silicon microcavity tuned to 1571 nm could in principle combine resonant spin preparation with single-photon emission entirely inside telecom bands, provided the emission rate is enhanced by the cavity.
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The manuscript reports ensemble-level optical spectroscopy and optically detected magnetic resonance (ODMR) measurements of the C center (Ci-Oi pair) in carbon-implanted, proton-irradiated SOI silicon. Photoluminescence shows the C0 line at 1571 nm and C1 line at 1560 nm; PLE resolves C0 through C4 excited states. Under zero magnetic field, ODMR shows two dips at 965 and 1009 MHz, interpreted as the E-split transitions within an S=1 triplet excited state (CT) with D/h=987 MHz and E/h=22 MHz. The paper also reports ODMR on the C1 line, temperature/laser-power/RF-power dependencies, and anisotropic Zeeman splitting for three magnetic-field orientations. The central claim is the first demonstration of a spin-optical interface for the C center, with optical spin readout in the telecom L-band.
Significance. If the assignment of the ODMR signal to the C-center triplet is correct, this is an important result: it would be the first silicon defect with optically detected spin states in the telecom L-band, and it would provide experimental validation of the DFT predictions in Ref. 17. The paper has clear strengths: the PL and PLE spectra identify the known C-center lines; the ODMR signal is spectrally filtered to the 1571 nm C0 line; the interpretation is compared with an external, independently authored theory; and the authors explicitly acknowledge and partially mitigate the ODCR background. However, the claim rests on ensemble measurements with no control sample lacking C centers, no error bars or repeated statistics, no direct measurement of the spin-dependent lifetimes, and only a qualitative comparison with the spin Hamiltonian. These gaps are load-bearing for the 'first demonstration' claim and require experimental strengthening before publication.
major comments (4)
- [Results, Fig. 1d; Methods, ODMR measurement] The central assignment of the 965/1009 MHz ODMR dips to the C-center CT triplet is not uniquely established. The sample is carbon-implanted and also proton-irradiated, which is expected to produce multiple radiation-induced defects; the paper itself acknowledges a strong ODCR background that depends on RF power. No control sample without carbon (or with varied carbon fluence) is measured, and no single-defect ODMR is shown; the Discussion states that single-C-center isolation is still in progress. Without such a control or a clear correlation between the ODMR amplitude and the C0-line intensity, assignment to another defect or to residual ODCR/heating structure remains plausible. This issue is directly load-bearing for the claim of the first C-center spin-optical interface.
- [Fig. 1d; Fig. 2] No error bars, repeated traces, or statistical analysis are presented for any ODMR spectrum. The ODMR contrast is small and is superimposed on a large, RF-power-dependent background; single traces do not establish reproducibility of the 965/1009 MHz dips. At minimum, repeated independent measurements (e.g., multiple cooldowns and RF sweeps) with uncertainty intervals should be shown to demonstrate that the features are not noise or artifacts.
- [Results, ODMR mechanism paragraph] The proposed readout mechanism assumes spin-dependent lifetimes (m_s=0 > 1.4 ms, m_s=±1 > 10 ms) and an ISC selection rule Δm_s=0 taken from Ref. 17, but these quantities are not measured here. Because the negative ODMR contrast is the central observable, the manuscript should either measure these lifetimes/ISC rates or explicitly label the mechanism as a hypothesis consistent with, but not established by, the data. This does not invalidate the ODMR observation itself, but it limits the strength of the 'optical spin readout' claim.
- [Eqs. (1)-(4) and following paragraph] The measured ZFS parameters D/h=987 MHz and E/h=22 MHz deviate from the DFT predictions of Ref. 17, and the proposed explanation (vibrational suppression of spin-orbit coupling, with citation to Ham) is not quantitatively compared. In addition, Eq. (2) is labeled H_Z but defines the spin-spin term, while the Zeeman Hamiltonian is introduced later as Eq. (4). The authors should correct the labeling and either provide a quantitative comparison (e.g., calculated D/E including vibronic corrections) or clearly state the discrepancy as an open question. The anisotropic Zeeman data in Fig. 3 are also interpreted only qualitatively; a fit to the spin Hamiltonian would substantially strengthen the assignment.
minor comments (6)
- [Eq. (2)] The label H_Z should be H_SS, since the equation defines the spin-spin interaction; the Zeeman term is defined in Eq. (4).
- [Results, Fig. 1d caption and text] The phrase 'two sharp resonant peaks centered at 987 MHz' is ambiguous; it should read 'a pair of peaks centered at 987 MHz' to clarify that the two peaks are at 965 and 1009 MHz.
- [Methods, ODMR measurement] The displayed equation for ODMR contrast is missing from the text: the sentence 'The ODMR contrast was deduced as follows:' is followed immediately by 'where PL represents...' with no equation. Please insert the formula.
- [References] Reference 9 appears to contain an incorrect author name ('Inc, P.'); please verify and correct the citation.
- [Results, PLE paragraph] The statement that carriers are transported from C1-C4 to C0 is an inference from the PLE spectrum; please phrase this as an inference rather than a direct observation.
- [Discussion] The sentence 'its lack of dark spin sublevels implies a potentially more stable spin state, offering longer coherence times' is speculative and not supported by the measurements presented; please soften or provide supporting evidence.
Circularity Check
No significant circularity: experimental ODMR is compared against an external theory, with fitted ZFS parameters reported as results.
full rationale
The paper's central claim—ODMR of the C center in the telecom L-band—is an experimental measurement of PL changes under RF excitation, compared against an external theoretical model (Ref. 17 by Udvarhelyi et al., with no author overlap). The zero-field splitting parameters D/h and E/h are extracted from the observed peak positions (965 and 1009 MHz), so they are the reported experimental result rather than inputs used to force agreement. The proposed readout mechanism invokes spin-dependent lifetimes (>1.4 ms vs >10 ms) taken from Ref. 17, an independent prior prediction; the paper explicitly notes that its measured D/E values deviate from that prediction and offers a speculative vibrational explanation, which is a comparison rather than a derivation from the conclusion. The few self-citations (e.g., Ref. 6 for telecom single-photon emitters) are contextual and not load-bearing. Limitations such as lack of single-defect isolation or control samples are acknowledged by the authors ('coherence studies and the isolation of a single C center are still in progress'), but these concern attribution and robustness, not circularity. No equation is defined in terms of the claimed result, and no fitted parameter is renamed as a prediction.
Assumptions & free parameters
free parameters (2)
- D/h (longitudinal zero-field splitting) =
987 MHz
- E/h (transverse zero-field splitting) =
22 MHz
assumptions (3)
- domain assumption The C center is a Ci-Oi interstitial pair with the energy level structure described in Refs 10-17, including a singlet ground state and excited states C0-C4 and C_T.
- domain assumption The C_T state is a spin triplet (S=1) with zero-field splitting and lifetimes >1.4 ms (m_s=0) and >10 ms (m_s=±1) as predicted in Ref 17.
- ad hoc to paper The spin-dependent intersystem crossing and non-radiative decay channels follow the selection rule Δm_s=0 and produce the observed negative ODMR contrast.
Cite this review
Pith. "Pith review of Optical spin readout of a silicon color center in the telecom L-band." pith.science (2026). https://pith.science/paper/KOBCBBY3
@misc{pith2026250207632,
author = {Pith},
title = {Pith review of: Optical spin readout of a silicon color center in the telecom L-band},
year = {2026},
howpublished = {\url{https://pith.science/paper/KOBCBBY3}},
note = {Machine review of arXiv:2502.07632}
}
read the original abstract
Silicon-based quantum technologies have gained increasing attention due to their potential for large-scale photonic integration, long spin coherence times, and compatibility with CMOS fabrication. Efficient spin-photon interfaces are crucial for quantum networks, enabling entanglement distribution and information transfer over long distances. While several optically active quantum emitters in silicon have been investigated, no spin-active defect with optical transitions in the telecom L-band-a key wavelength range for low-loss fiber-based communication-has been experimentally demonstrated. Here, we demonstrate the optical detection of spin states in the C center, a carbon-oxygen defect in silicon that exhibits a zero-phonon line at 1571 nm. By combining optical excitation with microwave driving, we achieve optically detected magnetic resonance, enabling spin-state readout via telecom-band optical transitions. These findings provide experimental validation of recent theoretical predictions and mark a significant step toward integrating spin-based quantum functionalities into silicon photonic platforms, paving the way for scalable quantum communication and memory applications in the telecom L-band.
Forward citations
Cited by 3 Pith papers
-
Optically Resolved Excited State Hyperfine Structure of a Silicon Colour Centre in the Telecom Bands
The hyperfine structure of the excited 1s:3T2 state of the singly ionized interstitial aluminum donor in 28Si has been optically resolved, giving a contact hyperfine coupling of 2.75 µeV.
-
Optically detected magnetic resonance of wafer-scale hexagonal boron nitride thin films
Wafer-scale hBN films grown by MOCVD, CVD, and MBE show optically detected magnetic resonance, with a best volume-normalized sensitivity of 30 µT Hz^-1/2 µm^3/2.
-
Single-photon emitters and spin-photon interfaces in silicon
Silicon defects (T, G, W, C centers) and erbium are the leading single-photon emitters in silicon, but reaching the strong light–matter coupling (C≫1) required for quantum networks still needs a roughly 10–1000x reduc...
Reference graph
Works this paper leans on
-
[1]
& Thompson, M
Wang, J., Sciarrino, F., Laing, A. & Thompson, M. G. Integrated photonic quantum technologies. Nat. Photonics 14, 273–284 (2020)
2020
-
[2]
Berkman, I. R. et al. Millisecond electron spin coherence time for erbium ions in silicon. Preprint at http://arxiv.org/abs/2307.10021 (2023)
work page Pith review arXiv 2023
-
[3]
Stuyck, N. D. et al. CMOS compatibility of semiconductor spin qubits. Preprint at https://doi.org/10.48550/arXiv.2409.03993 (2024)
-
[4]
Atatüre, M., Englund, D., Vamivakas, N., Lee, S.-Y . & Wrachtrup, J. Material platforms for spin-based photonic quantum technologies. Nat Rev Mater 3, 38–51 (2018)
work page 2018
-
[5]
Laccotripes, P . et al. Spin-photon entanglement with direct photon emission in the telecom C- band. Nat Commun 15, 9740 (2024)
work page 2024
-
[6]
Hollenbach, M., Berencén, Y ., Kentsch, U., Helm, M. & Astakhov, G. V. Engineering telecom single- photon emitters in silicon for scalable quantum photonics. Opt. Express 28, 26111 (2020)
work page 2020
-
[7]
Higginbottom, D. B. et al. Optical observation of single spins in silicon. Nature 607, 266–270 (2022)
work page 2022
-
[8]
Baron, Y . et al. Detection of Single W-Centers in Silicon. ACS Photonics 9, 2337–2345 (2022)
work page 2022
Show all 33 references
-
[9]
Inc, P . et al. Distributed Quantum Computing in Silicon. Preprint at http://arxiv.org/abs/2406.01704 (2024)
2024 arXiv
-
[10]
C., Woolley, R., Newman, R
Davies, G., Lightowlers, E. C., Woolley, R., Newman, R. C. & Oates, A. S. Carbon in radiation damage centres in Czochralski silicon. J. Phys. C: Solid State Phys. 17, L499 (1984)
1984
-
[11]
J., Thomas, D
Hopfield, J. J., Thomas, D. G. & Lynch, R. T. Isoelectronic Donors and Acceptors. Phys. Rev. Lett. 17, 312–315 (1966)
1966
-
[12]
H., Monemar, B
Svensson, J. H., Monemar, B. & Janzén, E. Pseudodonor electronic excited states of neutral complex defects in silicon. Phys. Rev. Lett. 65, 1796–1799 (1990)
1990
-
[13]
& Sauer, R
Wagner, J., Thonke, K. & Sauer, R. Excitation spectroscopy on the 0.79-eV ( C ) line defect in irradiated silicon. Phys. Rev. B 29, 7051–7053 (1984). 20
1984
-
[14]
The optical properties of luminescence centres in silicon
Davies, G. The optical properties of luminescence centres in silicon. Physics Reports 176, 83– 188 (1989)
1989
-
[15]
& Hangleiter, A
Bohnert, G., Weronek, K. & Hangleiter, A. Transient characteristics of isoelectronic bound excitons at hole-attractive defects in silicon: The C(0.79 eV), P(0.767 eV), and H(0.926 eV) lines. Phys. Rev. B 48, 14973–14981 (1993)
1993
-
[16]
Ishikawa, T., Koga, K., Itahashi, T., Itoh, K. M. & Vlasenko, L. S. Optical properties of triplet states of excitons bound to interstitial-carbon interstitial-oxygen defects in silicon. Phys. Rev. B 84, 115204 (2011)
2011
-
[17]
& Gali, A
Udvarhelyi, P ., Pershin, A., Deák, P . & Gali, A. An L-band emitter with quantum memory in silicon. npj Comput Mater 8, 262 (2022)
2022
-
[18]
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Pichler, P . Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. (Springer, Vienna, 2004). doi:10.1007/978-3-7091-0597-9
2004 doi
-
[19]
Gaebel, T. et al. Room-temperature coherent coupling of single spins in diamond. Nature Phys 2, 408–413 (2006)
2006
-
[20]
F., Buckley, B
Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. & Awschalom, D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84–87 (2011)
2011
-
[21]
Haykal, A. et al. Decoherence of VB- spin defects in monoisotopic hexagonal boron nitride. Nat Commun 13, 4347 (2022)
2022
-
[22]
Chen, W. M. & Monemar, B. Role of free carriers in the application of optically detected magnetic resonance for studies of defects in silicon. Appl. Phys. A 53, 130–135 (1991)
1991
-
[23]
Chen, W. M. & Monemar, B. Delayed optical detection of magnetic resonance for defects in Si and GaAs. Journal of Applied Physics 68, 2506–2509 (1990)
1990
-
[24]
Ham, F. S. Dynamical Jahn-Teller Effect in Paramagnetic Resonance Spectra: Orbital Reduction Factors and Partial Quenching of Spin-Orbit Interaction. Phys. Rev. 138, A1727–A1740 (1965)
1965
-
[25]
Fukui, T. et al. Perfect selective alignment of nitrogen-vacancy centers in diamond. Appl. Phys. Express 7, 055201 (2014). 21
2014
-
[26]
Fukushige, K. et al. Identification of the orientation of a single NV center in a nanodiamond using a three-dimensionally controlled magnetic field. Applied Physics Letters 116, 264002 (2020)
2020
-
[27]
Foglszinger, J. et al. TR12 centers in diamond as a room temperature atomic scale vector magnetometer. npj Quantum Inf 8, 65 (2022)
2022
-
[28]
Petersen, E. S. et al. Nuclear spin decoherence of neutral P 31 donors in silicon: Effect of environmental Si 29 nuclei. Phys. Rev. B 93, 161202 (2016)
2016
-
[29]
Harris, I. B. W. et al. Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers in Diamond. PRX Quantum 4, 040301 (2023)
2023
-
[30]
Balasubramanian, G. et al. Ultralong spin coherence time in isotopically engineered diamond. Nature Mater 8, 383–387 (2009)
2009
-
[31]
H., Niemeyer, I., Zhang, J
Shim, J. H., Niemeyer, I., Zhang, J. & Suter, D. Room-temperature high-speed nuclear-spin quantum memory in diamond. Phys. Rev. A 87, 012301 (2013)
2013
-
[32]
& Liu, R.-B
Yang, W., Wang, Z.-Y . & Liu, R.-B. Preserving qubit coherence by dynamical decoupling. Front. Phys. 6, 2–14 (2011)
2011
-
[33]
& Abrosimov, N
Becker, P ., Pohl, H.-J., Riemann, H. & Abrosimov, N. Enrichment of silicon for a better kilogram. physica status solidi (a) 207, 49–66 (2010). Acknowledgments The authors thank Sergei Lepeshov and Søren Stobbe from Technical University of Denmark for insightful discussions an...
2010
Reviewed August 8, 2026 · model on record in the stance chip above.
Discussion (0). Continue with ORCID to comment.