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Fractional topological states in rhombohedral multilayer graphene modulated by kagome superlattice

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arxiv 2502.17320 v2 pith:Z26PBQA2 submitted 2025-02-24 cond-mat.mes-hall cond-mat.str-el

classification cond-mat.mes-hallcond-mat.str-el
keywords topologicalfractionalkagomesuperlatticegraphenepotentialbilayersystem
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abstract

Fractional quantum anomalous Hall effects realized in twisted bilayer MoTe$_2$ and multilayer-graphene-based moir\'e heterostructures have captured a tremendous growth of interest. In this work, we propose that rhombohedral multilayer graphene coupled with an artificial kagome superlattice potential is a new platform to realize various fractional topological phases. Taking Bernal bilayer graphene as the simplest example, when it is placed on top of a prepatterned SiO$_2$ substrate with periodic arrays of holes arranged into kagome lattice, the system would be subject to a tunable kagome superlattice potential once an electrostatic voltage drop between the top and bottom gates is applied. Then, we theoretically study the electronic band structures, topological properties, and quantum geometric properties of the Bloch states of Bernal bilayer graphene coupled with a realistic kagome superlattice potential, which is well benchmarked by transport measurements in the weak superlattice-potential regime. We find that the system may exhibit nearly ideal topological flat bands in a substantial region of the parameter space spanned by superlattice constant and electrostatic potential strength. When these topological flat bands are fractionally filled, exact diagonalization calculations suggest that the system would exhibit rich fractional topological phases at 1/3, 2/3, 2/5, 3/5 and 1/2 fillings including both fractional Chern insulators and anomalous composite Fermi liquids under zero magnetic field.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Emergence of Topological Electron Crystals in Bilayer Graphene--Mott Insulator Heterostructures

    cond-mat.mes-hall 2025-12 unverdicted novelty 6.0 of 10

    Interlayer charge transfer in a BLG–Mott insulator heterostructure can stabilize honeycomb and kagome electron crystals with quantized anomalous and spin Hall responses.

  2. Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates

    cond-mat.mes-hall 2024-12 conditional novelty 6.0 of 10

    A periodic gate voltage on a GaAs 2DEG can flatten electron bands into pseudo-Landau levels, with an asymmetric pattern producing nonzero Berry curvature.

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