Pith. sign in

REVIEW 3 major objections 5 minor 38 references

Origin of persistent photoconductivity in surface conducting hydrogenated diamond films

T0 review · 3 major / 5 minor · reviewed 2026-08-06 · deepseek-v4-flash

Pith's one-line read Persistent photoconductivity in hydrogenated diamond is controlled by surface disorder, not bulk traps.

desk verdict A useful systematic dataset on tunable PPC in H-diamond, but the bulk-trap exclusion is asserted rather than shown and needs the same scrutiny as the surface model. read the letter →

arxiv 2507.06559 v1 pith:ZWYUUXLB submitted 2025-07-09 cond-mat.mtrl-sci physics.app-ph

classification cond-mat.mtrl-sciphysics.app-ph
keywords hydrogenateddiamondsurfaceconductivitypersistentphotoconductivityrandomlocalpotentialfluctuationspercolationtransportozonationtwo-dimensionalholegasstates
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper tries to pin down why hydrogen-terminated diamond keeps conducting after the light goes off. It argues that the persistent photoconductivity comes from random local potential fluctuations at the surface, which trap photoexcited carriers and slow their recombination, rather than from bulk defects. To test this, the authors progressively replaced hydrogen with oxygen by ozonation, which reduced the sheet carrier density and shortened the photocurrent decay time from 232 to 5 seconds. A sympathetic reader should care because identifying the true mechanism determines how diamond photodetectors and optoelectronic devices should be engineered to be fast and stable.

What carries the argument

The argument is carried by the random-local-potential-fluctuation (RLPF) model, in which surface disorder creates a landscape of energy maxima and minima that prevents immediate electron-hole recombination. This model is tested against the standard alternatives: the large-lattice-relaxation model predicts stronger PPC at low temperature and the macroscopic-barrier model predicts single-exponential decay, both of which the data reject. The quantitative tools are stretched-exponential fits of the photocurrent decay, which give a decay time $\tau_d$ and stretching exponent $\beta$; Arrhenius fits of $\tau_d$ above a critical temperature $T_C$, which give the recombination barrier $\Delta E$; and fits of the photocurrent buildup to $I_{\text{build-up}} \propto (T - T_C)^\mu$, which support percolative transport. Surface states introduced by hydrogen termination provide the midgap levels through which sub-bandgap photons are absorbed.

What would settle it

Measure the bulk defect density in each film (for example with deep-level transient spectroscopy or sub-bandgap absorption). If the defect density varies across HD, OHD-60s, and OHD-90s in step with the decay times, then bulk traps could explain the trend and the surface-fluctuation claim would be undercut. Alternatively, show via Kelvin probe microscopy that surface potential fluctuations do not decrease with oxygen termination; the fitted recombination barriers then lose their assigned origin.

Watch

Extended reading notes

Core claim

The paper's central claim is that persistent photoconductivity in surface-conducting hydrogenated diamond is governed by random local potential fluctuations arising from inhomogeneous hydrogen termination and non-uniform surface adsorbates. These fluctuations create spatially separated minima in the valence band and midgap states, so photoexcited electron-hole pairs are held apart and recombine slowly, producing stretched-exponential decay. As oxygen termination increases, the surface becomes more homogeneous, Coulomb interactions between the two-dimensional hole gas and the adsorbate layer weaken, the recombination barrier falls from about 150 to 54 meV, and the decay time falls from 232 to 5 seconds. Above a critical temperature, transport proceeds by percolation between localized states, and this percolative picture fits the measured photocurrent buildup. The authors therefore conclude that bulk traps and grain boundaries, being similar across all three films, are not the source of the observed PPC.

Load-bearing premise

The whole attribution to surface disorder rests on the assumption that the three films have the same bulk defect population, because the paper does not measure defect densities and simply infers similarity from identical growth.

Editorial extensions

If this is right

  • Controlled ozonation can reduce diamond's persistent photocurrent from minutes to seconds, making photodetectors based on hydrogen-terminated diamond respond faster.
  • The mechanism implies that reducing surface inhomogeneity, not passivating bulk defects, should be the design goal for low-PPC diamond devices.
  • The critical temperature for percolative conduction depends on carrier density, so device operating temperature and surface termination must be chosen together.
  • The stretched-exponential relaxation and the barrier trend give a direct lifetime metric to optimize: minimizing $\Delta E$ below roughly 50 meV corresponds to nearly negligible PPC.
  • Surface chemistry, not just band structure, sets the recombination barrier, linking adsorbate control to device memory time.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If RLPF is correct, then depositing a uniform, strongly bonded monolayer that eliminates adsorbate inhomogeneity should suppress PPC even more than ozonation does; this is a testable prediction the paper does not make.
  • Kelvin probe force microscopy across the three films should show a monotonic decrease in the amplitude of surface potential fluctuations with increasing oxygen termination; the paper cites such methods but does not report those maps.
  • The model implies a direct link between PPC decay time and the spatial correlation length of the potential fluctuations; engineered patterns of partial termination could act as a lithographic test of percolation-limited recombination.
  • A cleaner test would compare single-crystal and polycrystalline hydrogenated diamond with identical termination: if PPC is truly surface-controlled, the decay times should be similar despite very different grain-boundary densities.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The paper investigates the origin of persistent photoconductivity (PPC) in surface-conducting hydrogen-terminated diamond (HD) films. The authors prepare three samples with different degrees of oxygen termination (HD, OHD-60s, OHD-90s) and measure photocurrent rise and decay under sub-bandgap 400 nm illumination. They fit the decay with a stretched exponential, extract recombination barriers from Arrhenius plots, and analyze the temperature-dependent photocurrent with a percolation model. They report that both the PPC decay time (232 to 5 s) and the recombination barrier (~150 to 54 meV) decrease with increasing oxygen termination. The central claim is that PPC in HD arises from random local potential fluctuations at the surface—caused by inhomogeneous hydrogen termination and adsorbate distribution—and from percolative transport, rather than from bulk traps.

Significance. If the mechanistic attribution is correct, the work provides a useful framework for understanding and controlling PPC in diamond-based optoelectronic devices. The experimental design is systematic: a single growth process, controlled ozonation, and consistent measurement protocols yield a monotonic trend in a key observable. The authors also make reasonable qualitative arguments against the large-lattice-relaxation and macroscopic-barrier models. However, the central claim relies on an unverified assumption that bulk defect densities are identical across the three samples, and the percolation model is only demonstrated on two of the three samples. These gaps do not necessarily invalidate the qualitative conclusion, but they require either additional experimental evidence or a more cautious interpretation before the surface-confined mechanism can be considered established.

major comments (3)
  1. [Section 4 (Discussion)] The exclusion of bulk traps as the origin of PPC rests entirely on the assumption that "grain boundaries and other bulk defects are similar across all three films" (Section 4, third paragraph). No measurement of bulk defect density in the three samples is presented, and the manuscript does not state whether the samples are pieces of a single film or separate growths. This matters because 400 nm (3.1 eV) excitation lies within the 1.7–3.2 eV range of unintentional nitrogen-related defect levels that the paper itself cites for CVD diamond [20]; sub-bandgap light can directly populate such bulk states. If ozonation altered the bulk trap distribution, or if the films differ in nitrogen content or grain-boundary defects, the observed monotonic trends in decay time and recombination barrier could be explained by bulk trap-assisted recombination without invoking surface potential fluctuations. The later statement that "we have already ruled out the traps related to EN states" (Section 4, near Fig. 7b) is not supported by any measurement; the only basis is the same similarity assumption. This is a load-bearing gap in the attribution and should be addressed, either by measuring defect densities (e.g., photoluminescence, sub-bandgap absorption, or comparing samples from the same growth), or by explicitly reframing the conclusion as a surface mechanism that is plausible but not uniquely determined.
  2. [Section 3.4 and Fig. 6] The percolation model fit is presented only for the HD and OHD-60s samples; the OHD-90s sample is excluded with the statement that its critical temperature TC falls below 80 K. This exclusion is not substantiated by a fit attempt or a quantitative criterion. Since the paper's broader conclusion is that "the observed PPC behavior is closely associated with percolative transport processes within the HD film," support from only two of the three measured samples weakens the generality of the claim. The authors should either show the OHD-90s data and its fit deviation, or provide evidence (for example, from the temperature dependence of tau_d) that the percolation transition indeed occurs below the accessible temperature range for that sample.
  3. [Sections 3.3 and 3.4, Eqs. (1)-(3)] Several quantitative results are reported without fit uncertainties, including the stretched-exponential decay time tau_d (232, 69, and 5 s), the stretching exponent beta (0.54, 0.41, 0.38), and the growth time constants tau_1 and tau_2 in Eq. (1). Without error bars or goodness-of-fit metrics, it is difficult to assess whether the differences between samples, which are central to the trend claims, are statistically meaningful. The Arrhenius barriers are given with uncertainties (150 +/- 51, 80 +/- 11, 54 +/- 13 meV), but the decay times and exponents are not. I request that the authors provide uncertainties for all fitted parameters, or at least for tau_d, and report a measure of fit quality (e.g., R^2 or residuals) for the stretched-exponential and percolation fits.
minor comments (5)
  1. [Section 3.1] There are typographical errors: "diamand Raman band" should be "diamond Raman band," and "qulaity" should be "quality."
  2. [Section 3.2] The phrase "When H atoms on the diamond surface are partially placed by O atoms" should read "partially replaced by O atoms."
  3. [Section 3.4] The text refers to "Fig. 5a, 5b and 5c respectively for HD, OHD-60s and OHD-90s," but Fig. 5 panels a, c, and e show the decay curves, while panels b, d, and f show the temperature dependence. The panel references in the text should be corrected to match the figure panels.
  4. [Eq. (1)] The photocurrent is denoted In in Eq. (1) but I(t) elsewhere; using a consistent notation would improve clarity.
  5. [Section 3.3] The statement that the double exponential growth fitting "represents that two distinct and dominant processes are involved" is not elaborated; if the authors cannot identify the processes, it would be more precise to say that two exponential components are empirically needed to describe the growth.

Circularity Check

0 steps flagged · score 2.0 of 10

No circular step forces the central claim; empirical model fits are in-sample but not reductions, though bulk-defect exclusion is an unsupported assumption.

full rationale

I walked the derivation chain. The central quantitative results (tau_d = 232, 69, 5 s; recombination barriers 150, 80, 54 meV) are extracted by fitting decay curves with Eq. (2) and Eq. (3); these are data characterizations, not predictions of a model from its own fitted parameters. The attribution to random local potential fluctuations and percolation is supported by comparing qualitative signatures (low-temperature plateau of tau_d, thermal activation above T_C, stretched-exponential decay) with model expectations cited from the literature [7,23,34]. The percolation fit of Eq. (4) to I_build-up is an in-sample fit, so the statement that the data 'aligns with the predictions of the percolation model' is overstrong; however, it does not reduce Eq. (4) to its fit parameters by construction, and no fitted parameter is later relabeled as an independent prediction. I also flag two manuscript-level weaknesses that are not circularity: the phrase 'As discussed in Section 4.3.2' refers to a nonexistent section (likely a leftover error), and the exclusion of bulk traps rests on the unmeasured assumption that 'the grain boundaries and other bulk defects are similar across all three films, their contribution to the observed PPC is likely minimal.' That is a missing-evidence gap, not a circular step, because the conclusion does not define its premise; it simply lacks independent support. Self-citations ([14], [16], [20]) are used for growth, oxygen-functionalization calibration, and known defect levels; none is invoked as an unverified uniqueness theorem. I therefore find no step in which the claimed result equals its input by construction; the score of 2 reflects the minor in-sample validation and the unsupported bulk-defect exclusion, not derivation-level circularity.

Assumptions & free parameters 7 free parameters · 4 assumptions · 0 invented entities

No new physical entities are introduced. All free parameters are model fit parameters (stretched exponential, Arrhenius, percolation). The main axioms are standard model assumptions plus an unverified claim that bulk defects are unchanged by ozonation.

free parameters (7)
  • decay time constant τd = 232 s (HD), 69 s (OHD-60s), 5 s (OHD-90s)
    Fitted to photocurrent decay curves using stretched exponential function, Eq. (2). Central to the PPC trend.
  • stretching exponent β = 0.54, 0.41, 0.38
    Fitted exponent in Eq. (2); indicates distribution of relaxation processes.
  • growth time constants τ1, τ2 = (4, 19), (3, 14), (1, 4) s
    Fitted with double exponential growth, Eq. (1), for HD, OHD-60s, OHD-90s respectively.
  • recombination barrier ΔE = 150±51, 80±11, 54±13 meV
    Slope of Arrhenius fit of τd vs 1/T, Eq. (3), for HD, OHD-60s, OHD-90s respectively.
  • percolation exponent μ = 1.54±0.04 (HD), 2.6±0.49 (OHD-60s)
    Fitted from temperature-dependent Ibuild-up using the percolation model, Eq. (4).
  • critical temperature TC = 172±1 K (HD), 103±8 K (OHD-60s)
    Fitted from the percolation model; OHD-90s not fitted because TC is claimed to be below 80 K.
  • Arrhenius prefactor τ0 = not reported
    Pre-exponential constant in Eq. (3), obtained from fits but not stated in the paper.
assumptions (4)
  • standard math Stretched exponential decay implies a broad distribution of trap states or relaxation times.
    Used to justify the presence of multiple energy transfer mechanisms (Section 3.3).
  • domain assumption The RLPF model is the correct framework for this system after ruling out LLR and MB models based on qualitative signatures.
    Adopted in Section 4; no microscopic verification of the potential fluctuations is provided.
  • domain assumption Surface states on H-terminated diamond, as reported in prior DFT and spectroscopy studies, provide intermediate levels for sub-bandgap excitation.
    Relied on in Section 3.3 and Discussion to explain the 400 nm response.
  • ad hoc to paper The bulk defect densities (grain boundaries, N-related states) are identical across the three samples.
    Stated in Section 4 without direct measurement; needed to exclude bulk-trap contributions.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Origin of persistent photoconductivity in surface conducting hydrogenated diamond films." pith.science (2026). https://pith.science/paper/ZWYUUXLB

@misc{pith2026250706559,
  author       = {Pith},
  title        = {Pith review of: Origin of persistent photoconductivity in surface conducting hydrogenated diamond films},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/ZWYUUXLB}},
  note         = {Machine review of arXiv:2507.06559}
}
read the original abstract

The p-type surface conductivity of hydrogen-terminated diamond (HD) has opened up new possibilities for the development of diamond-based electronic devices. However, the origin of the persistent photoconductivity (PPC) observed in surface-conducting HD remains unclear, an understanding that is crucial for advancing HD-based optoelectronic technologies. In this study, we investigate the underlying mechanism of PPC in surface-conducting HD films. A systematic analysis was performed by tuning the carrier density via partial oxygen termination using an ozonation process. With increasing O-termination, both the decay time and the recombination barrier of photoexcited electron-hole pairs were found to decrease significantly, from 232 to 5 seconds, and from ~ 150 to 54 meV, respectively. Temperature-dependent measurements reveal that PPC in HD is influenced by random local potential fluctuations, which delay the recombination of photoexcited carriers. Furthermore, the observed PPC behavior is closely associated with percolative transport processes within the HD film. Importantly, the dependence of PPC on sheet carrier density is correlated with Coulomb interactions between the two-dimensional hole gas and the surface adsorbate layer. This study offers new insights into the PPC mechanism in surface-conducting HD films, contributing to the broader understanding necessary for the design of advanced diamond-based optoelectronic devices.

Figures

Figures reproduced from arXiv: 2507.06559 by the authors.

Figure 1
Figure 1. a shows the FESEM surface morphology of the as grown HD film, with the inset showing its cross sectional view. A multi-faceted crystalline structure is clearly observable with the coalescence of grains in both lateral and vertical directions. The average grain size of the diamond film is ~ 2 μm with the thickness of ~ 2.1 μm. The surface morphology of the diamond [PITH_FULL_IMAGE:figures/full_fig_p005_1.png] view at source ↗
Figure 2
Figure 2. (a) I-V characteristics, (b) sheet resistance and (c) carrier density of HD, OHD-60s and OHD-90s samples. The solid line in Figs. 2b and 2c is only guide to eye. 3.3. Persistent photoconductivity [PITH_FULL_IMAGE:figures/full_fig_p007_2.png] view at source ↗
Figure 3
Figure 3. The rise and decay of photocurrent as a function of time for the samples HD, OHD￾60s and OHD-90s under a DC bias of 0.2 V. To estimate the PC time constants, the photocurrent growth and decay curves are normalized and displayed in Figs. 4a and 4b respectively, for HD, OHD-60s and OHD-90s samples. The photocurrent growth curves for all three samples were best fitted using a double exponential equation of the followin… view at source ↗
Figures from the paper (4 more)
Figure 4
Figure 4. Figure 4: The normalized photocurrent (a) growth curves and (b) decay curves for HD, OHD [PITH_FULL_IMAGE:figures/full_fig_p010_4.png]
Figure 5
Figure 5. Figure 5: (a, c, e) The normalized photocurrent decay curves at different temperatures and (b, d, [PITH_FULL_IMAGE:figures/full_fig_p012_5.png]
Figure 6
Figure 6. Figure 6: The Ibuild-up as a function of temperature for (a) HD and (b) OHD-60s samples. The solid red line in the plots represents the fitted curve based on percolation current transport. 4. Discussion In this study, the photocurrent measurements reveal that PPC is most promine…
Figure 7
Figure 7. Figure 7: b illustrates the density of states near the surface, highlighting representative energy levels including SS near the VBM, midgap states due to H-termination, nitrogen-related donor states linked to various types of point defects along with energy level of VB, vacuum a…

Discussion (0). Sign in to comment.

Reference graph

Works this paper leans on

38 extracted references · 34 canonical work pages

  1. [20]

    Ganesan, P .K

    K. Ganesan, P .K. Ajikumar, S.K. Srivastava, P . Magudapathy, Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock, Diam Relat Mater 106 (2020) 107872. https://doi.org/10.1016/j.diamond.2020.107872

  2. [1]

    Isberg, J

    J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, D.J. Twitchen, A.J. Whitehead, S.E. Coe, G.A. Scarsbrook, High carrier mobility in single-crystal plasma-deposited diamond, Science (1979) 297 (2002) 1670–1672. https://doi.org/10.1126/science.1074374

  3. [2]

    X. Yu, J. Zhou, C. Qi, Z. Cao, Y . Kong, T. Chen, A High Frequency Hydrogen-Terminated Diamond MISFET with fTfmax of 70/80 GHz, IEEE Electron Device Letters 39 (2018) 1373–1376. https://doi.org/10.1109/LED.2018.2862158

  4. [3]

    Maier, M

    F. Maier, M. Riedel, B. Mantel, J. Ristein, L. Ley, Origin of surface conductivity in diamond, Phys Rev Lett 85 (2000) 3472–3475. https://doi.org/10.1103/PhysRevLett.85.3472

  5. [4]

    Chakrapani, J.C

    V. Chakrapani, J.C. Angus, A.B. Anderson, S.D. Wolter, B.R. Stoner, G.U. Sumanasekera, Charge Transfer Equilibria Between Diamond and an Aqueous Oxygen Electrochemical Redox Couple, Science (1979) 318 (2007) 1424. https://doi.org/DOI:10.1126/science.1148841

  6. [5]

    Sulthana, K

    N.M. Sulthana, K. Ganesan, P .K. Ajikumar, Enhanced sensitivity of partial O-terminated H-diamond for H2S detection at room temperature, Diam Relat Mater 140 (2023) 110568. https://doi.org/10.1016/j.diamond.2023.110568

  7. [6]

    Y . Liu, X. Dong, W. Liao, J. Yan, H. Niu, Z. Dai, C. Lai, X. Yang, S. Yang, Z. Lv, M. Xu, H. Wang, Photoelectric characteristics of hydrogen-terminated polycrystalline diamond MESFETs, Opt Express 31 (2023) 29061. https://doi.org/10.1364/oe.496666

  8. [7]

    Sumanth, K

    A. Sumanth, K. Lakshmi Ganapathi, M.S. Ramachandra Rao, T. Dixit, A review on realizing the modern optoelectronic applications through persistent photoconductivity, J Phys D Appl Phys 55 (2022) 393001. https://doi.org/10.1088/1361-6463/ac7f66

Show all 38 references
  1. [8]

    Marshall, A.S

    J.M. Marshall, A.S. Walters, Transient photo-response and residual field measurements in CVD diamond, 2000. https://doi.org/10.1016/S0925-9635(99)00261-7

  2. [9]

    Nebel, A

    C.E. Nebel, A. Waltenspiel, M. Stutzmann, M. Paul, L. Schäfer, Persistent photocurrents in CVD diamond, 2000. https://doi.org/10.1016/S0925-9635(99)00204-6

  3. [10]

    Koide, M.Y

    Y . Koide, M.Y . Liao, M. Imura, Mechanism of photoconductivity gain and persistent photoconductivity for diamond photodetector, Diam Relat Mater 19 (2010) 205–207. https://doi.org/10.1016/j.diamond.2009.08.016. 23

  4. [11]

    M. Liao, Y . Koide, J. Alvarez, M. Imura, J.P . Kleider, Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors, Phys Rev B 78 (2008) 045112. https://doi.org/10.1103/PhysRevB.78.045112

  5. [12]

    Zakaria, Persistent photoconductivity and transport properties of the air-induced surface conducting diamond, ARPN Journal of Engineering and Applied Sciences 13 (2018) 3570–3578

    F.Z. Zakaria, Persistent photoconductivity and transport properties of the air-induced surface conducting diamond, ARPN Journal of Engineering and Applied Sciences 13 (2018) 3570–3578

  6. [13]

    F. Zafarina Zakaria, PHOTOCONDUCTIVITY EFFECTS IN AIR-INDUCED AND FLUOROFULLERENE- INDUCED SURFACE CONDUCTING DIAMOND, ARPN Journal of Engineering and Applied Sciences 13 (2018) 1918–1923. www.arpnjournals.com

  7. [14]

    Ajikumar, K

    P .K. Ajikumar, K. Ganesan, N. Kumar, T.R. Ravindran, S. Kalavathi, M. Kamruddin, Role of microstructure and structural disorder on tribological properties of polycrystalline diamond films, Appl Surf Sci 469 (2019) 10–17. https://doi.org/10.1016/j.apsusc.2018.10.265

  8. [15]

    M. Wolf, S. Nettesheim, J.M. White, E. Hasselbrink, G. Ertl, Dynamics of the ultraviolet photochemistry of water adsorbed on Pd(111), J Chem Phys 94 (1991) 4609–4619. https://doi.org/10.1063/1.460589

  9. [16]

    Sulthana, K

    N.M. Sulthana, K. Ganesan, P .K. Ajikumar, S. Dhara, Studies on tuning surface electronic properties of hydrogenated diamond by oxygen functionalization, Diam Relat Mater 128 (2022) 109284. https://doi.org/10.1016/j.diamond.2022.109284

  10. [17]

    S.J. Sque, R. Jones, P .R. Briddon, Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces, Phys Rev B Condens Matter Mater Phys 73 (2006) 085313. https://doi.org/10.1103/PhysRevB.73.085313

  11. [18]

    Chemin, I

    A. Chemin, I. Levine, M. Rusu, R. Vaujour, P . Knittel, P . Reinke, K. Hinrichs, T. Unold, T. Dittrich, T. Petit, Surface-Mediated Charge Transfer of Photogenerated Carriers in Diamond, Small Methods 7 (2023) 2300423. https://doi.org/10.1002/smtd.202300423

  12. [19]

    Sobaszek, M

    M. Sobaszek, M. Brzhezinskaya, A. Olejnik, V. Mortet, M. Alam, M. Sawczak, M. Ficek, M. Gazda, Z. Weiss, R. Bogdanowicz, Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry, Small 19 (2023) 2208265. https://doi.o...

  13. [21]

    Moore, C

    J.C. Moore, C. V. Thompson, A phenomenological model for the photocurrent transient relaxation observed in ZnO-based photodetector devices, Sensors (Switzerland) 13 (2013) 9921–9940. https://doi.org/10.3390/s130809921

  14. [22]

    Chen, R.S

    H.Y . Chen, R.S. Chen, N.K. Rajan, F.C. Chang, L.C. Chen, K.H. Chen, Y .J. Yang, M.A. Reed, Size- dependent persistent photocurrent and surface band bending in m-axial GaN nanowires, Phys Rev B Condens Matter Mater Phys 84 (2011) 205443. https://doi.org/10.1103/PhysRevB.84.205443

  15. [23]

    Jiang, J.Y

    H.X. Jiang, J.Y . Lin, Percolation Transition of Persistent Photoconductivity in II-VI Mixed Crystals, Phys Rev Lett 64 (1990) 2547–2550. https://doi.org/https://doi.org/10.1103/PhysRevLett.64.2547

  16. [24]

    D. V. Lang, R. A. Logan, Large-Lattice-Relaxation Model for Persistent Photoconductivity in compound semiconductors, Phys Rev Lett 39 (1977) 635–639. https://doi.org/https://doi.org/10.1103/PhysRevLett.39.635. 24

  17. [25]

    H.S. Choi, S. Jeon, Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors, Appl Phys Lett 104 (2014) 133507. https://doi.org/10.1063/1.4870406

  18. [26]

    K. Roy, M. Padmanabhan, S. Goswami, T.P . Sai, G. Ramalingam, S. Raghavan, A. Ghosh, Graphene- MoS 2 hybrid structures for multifunctional photoresponsive memory devices, Nat Nanotechnol 8 (2013) 826–830. https://doi.org/10.1038/nnano.2013.206

  19. [27]

    Konstantatos, M

    G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F.P .G. De Arquer, F. Gatti, F.H.L. Koppens, Hybrid grapheneĝquantum dot phototransistors with ultrahigh gain, Nat Nanotechnol 7 (2012) 363–368. https://doi.org/10.1038/nnano.2012.60

  20. [28]

    Hayashi, S

    K. Hayashi, S. Yamanaka, H. Watanabe, T. Sekiguchi, H. Okushi, K. Kajimura, Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films, J Appl Phys 81 (1997) 744–753. https://doi.org/10.1063/1.364299

  21. [29]

    L. Chen, X. He, H. Liu, L. Qian, S.H. Kim, Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon, Journal of Physical Chemistry C 122 (2018) 11385–11391. https://doi.org/10.1021/acs.jpcc.8b01821

  22. [30]

    Stehlik, T

    S. Stehlik, T. Glatzel, V. Pichot, R. Pawlak, E. Meyer, D. Spitzer, B. Rezek, Water interaction with hydrogenated and oxidized detonation nanodiamonds - Microscopic and spectroscopic analyses, Diam Relat Mater 63 (2016) 97–102. https://doi.org/10.1016/j.diamond.2015.08.016

  23. [31]

    Nebel, F

    C.E. Nebel, F. Ertl, C. Sauerer, M. Stutzmann, C.F.O. Graeff, P . Bergonzo, O.A. Williams, R.B. Jackman, Low temperature properties of the p-type surface conductivity of diamond, Diam Relat Mater 11 (2002) 351–354. https://doi.org/10.1016/S0925-9635(01)00586-6

  24. [32]

    Oliveira, M.R

    E.F. Oliveira, M.R. Neupane, C. Li, H. Kannan, X. Zhang, A.B. Puthirath, P .B. Shah, A.G. Birdwell, T.G. Ivanov, R. Vajtai, D.S. Galvao, P .M. Ajayan, A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces, Comput Mater Sci 200 (2021) 110859. https://doi.org/...

  25. [33]

    long Liu, L

    J. long Liu, L. xian Chen, Y . ting Zheng, J. jing Wang, Z. hong Feng, C. ming Li, Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen, International Journal of Minerals, Metallurgy and Materials 24 (2017) 850–8...

  26. [34]

    Jiang, J.Y

    H.X. Jiang, J.Y . Lin, Persistent photocondnctivitp and related critical phenomena in Zn0.3Cd0.7Se, Phys Rev B 40 (1989) 10025–10028. https://doi.org/https://doi.org/10.1103/PhysRevB.40.10025

  27. [35]

    M. Yang, Q. Yuan, M. Qiu, Z. Jia, G. Yang, K. Nishimura, C. Te Lin, X. Sun, N. Jiang, Y . Hu, Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface, Diam Relat Mater 139 (2023) 110414. https://doi.org/10.1016/j.diamond.2023.110414

  28. [36]

    Y . Li, J.F. Zhang, G.P . Liu, Z.Y . Ren, J.C. Zhang, Y . Hao, Mobility of Two-Dimensional Hole Gas in H- Terminated Diamond, Physica Status Solidi - Rapid Research Letters 12 (2018) 1700401. https://doi.org/10.1002/pssr.201700401

  29. [37]

    Rezek, C.E

    B. Rezek, C.E. Nebel, Electronic properties of plasma hydrogenated diamond surfaces: A microscopic study, Diam. Relat. Mater. 15 (2006) 1374–1377. doi:10.1016/j.diamond.2005.10.002

  30. [38]

    Rezek, C.E

    B. Rezek, C.E. Nebel, Kelvin force microscopy on diamond surfaces and devices, Diam. Relat. Mater. 14 (2005) 466–469. doi:10.1016/j.diamond.2005.01.041

Pith tools

Reviewed August 6, 2026 · model on record in the stance chip above.