arxiv: 2605.07700 · v1 · submitted 2026-05-08 · ❄️ cond-mat.mtrl-sci

Recognition: 2 theorem links

· Lean Theorem

Epitaxial growth of beta-bismuthene on Sb2Te3

and Roberto Flammini, Arslan Masood, Evgueni V. Chulkov, Fabio Ronci, Giorgia Sementilli, Marco Papagno, Marilena Carbone, Sergey V. Eremeev, Stefano Colonna, Ziya S. Aliev

Pith reviewed 2026-05-11 02:31 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci

keywords beta-bismutheneepitaxial growthSb2Te3scanning tunneling microscopytopological insulator2D materialsheterointerfacenucleation

0 comments

The pith

Beta-bismuthene forms an epitaxial interface on the topological insulator Sb2Te3 when bismuth is deposited under controlled coverage and temperature.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that beta-bismuthene, a two-dimensional bismuth sheet, can be grown directly on Sb2Te3 to create a heterointerface. Systematic changes in bismuth coverage and substrate temperature during deposition determine how the bismuth nucleates, how the islands spread, and what atomic arrangement they adopt. Scanning tunneling microscopy images show the resulting lattice and reveal defects that originate from the underlying Sb2Te3 crystal. A reader would care because the combination places a heavy-atom 2D layer with strong spin-orbit coupling next to a material whose surface states are topologically protected.

Core claim

The authors report the successful epitaxial growth of beta-bismuthene on Sb2Te3. They show that bismuth coverage controls nucleation density and island size while substrate temperature affects the quality of the atomic ordering inside the islands. Throughout the bismuthene lattice, defects induced by the substrate are visible in the STM images.

What carries the argument

The epitaxial heterointerface between beta-bismuthene and Sb2Te3, whose formation is tuned by bismuth coverage and substrate temperature and imaged at atomic resolution with scanning tunneling microscopy.

If this is right

Increasing bismuth coverage increases the density and size of bismuth islands on the surface.
Raising substrate temperature improves the atomic ordering inside the bismuthene islands.
Defects from the Sb2Te3 substrate appear uniformly across the bismuthene layer and limit its perfection.
The interface forms without detectable intermixing when growth parameters are chosen correctly.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

The same deposition approach could be tested on other topological insulators to produce families of similar 2D interfaces.
The substrate-induced defects could be mapped against electronic measurements to see how they scatter carriers in the bismuthene.
Because Sb2Te3 already supports topological surface states, the completed stack offers a platform for studying proximity effects between 2D bismuthene and those states.

Load-bearing premise

The atomic lattices and island shapes seen in the microscope truly belong to beta-bismuthene and the layer sits in registry with the Sb2Te3 surface without intermixing or other phases.

What would settle it

An STM image that reveals an atomic spacing or symmetry different from the expected beta-bismuthene structure, or that shows no consistent alignment with the Sb2Te3 lattice, would show the growth is not epitaxial beta-bismuthene.

Figures

Figures reproduced from arXiv: 2605.07700 by and Roberto Flammini, Arslan Masood, Evgueni V. Chulkov, Fabio Ronci, Giorgia Sementilli, Marco Papagno, Marilena Carbone, Sergey V. Eremeev, Stefano Colonna, Ziya S. Aliev.

**Figure 2.** Figure 2: FIG. 2. (a–d) STM images of Bi growth on Sb [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗

**Figure 3.** Figure 3: FIG. 3. STM images acquired at 80 K of the Sb [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗

read the original abstract

Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly distinctive niche due to their enhanced spin-orbit interaction. Here, we present an epitaxial heterointerface formed by beta-bismuthene on Sb2Te3, a well-known three-dimensional topological insulator. Using scanning tunneling microscopy, we systematically investigated the effects of Bi coverage and substrate temperature on nucleation processes, island morphology, and atomic structure. In addition, substrate-induced defects were identified throughout the bismuthene lattice.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

This paper reports epitaxial beta-bismuthene growth on Sb2Te3 with STM mapping of coverage and temperature effects plus substrate defects, but the phase identification rests on unquantified lattice assignments.

read the letter

The key takeaway is that the authors grew beta-bismuthene on Sb2Te3 and used STM to track how Bi coverage and substrate temperature control nucleation, island shapes, and atomic ordering, while also noting defects tied to the substrate. That specific heterointerface and the parameter study are the new pieces here. They get credit for running a systematic set of growth runs instead of just showing one condition, which gives a practical sense of the process window. Spotting substrate-induced defects throughout the layer is also useful for anyone thinking about real-device interfaces in these heavy-element 2D systems. The work stays observational and does not lean on fitting or modeling, so there is no circularity problem. The soft spot is the structural assignment itself. The claim that the observed lattices are specifically the buckled beta phase and that the interface is truly epitaxial without intermixing depends on STM features matching expectations. The abstract gives no lattice constants, no direct comparison to alpha or gamma bismuth phases, and no bias-dependent or symmetry analysis that would exclude Sb incorporation or reconstructions. If the full paper supplies those measurements and rules out the alternatives with clear data, the interpretation holds; otherwise the central result stays provisional. This is aimed at the van der Waals heterostructure and spin-orbit materials crowd who need concrete growth recipes for bismuthene on topological insulator substrates. A reader looking for a starting point on similar systems would find the coverage-temperature trends helpful. It is worth sending to peer review because the experimental approach is standard and the topic sits in an active niche, though referees will likely press for quantitative STM metrics to back the phase claim.

Referee Report

1 major / 1 minor

Summary. The manuscript reports the epitaxial growth of beta-bismuthene on the topological insulator Sb2Te3. Using scanning tunneling microscopy, the authors systematically vary bismuth coverage and substrate temperature to examine effects on nucleation processes, island morphology, and atomic structure, while also identifying substrate-induced defects throughout the bismuthene lattice.

Significance. If the phase identification and epitaxial character are confirmed, the work would establish a new 2D/3D heterointerface combining a buckled honeycomb bismuthene layer (with strong spin-orbit coupling) and a well-characterized topological insulator substrate. This could enable controlled studies of interface-induced phenomena relevant to spintronics and topological electronics. The systematic exploration of growth parameters is a positive feature that provides a practical route toward reproducible synthesis.

major comments (1)

The central claim of an epitaxial beta-bismuthene/Sb2Te3 heterointerface rests on the assignment of observed atomic lattices to the buckled honeycomb beta phase rather than alpha-bismuthene, gamma phases, reconstructions, or Bi-Sb intermixing. No quantitative lattice constants, Fourier-transform analysis, symmetry identification, or bias-dependent imaging are supplied to exclude these alternatives, leaving the structural interpretation unsupported by the presented evidence.

minor comments (1)

The abstract states that systematic STM studies were performed, yet the manuscript would benefit from explicit inclusion of representative images, error bars on coverage/temperature trends, and raw data metrics in the main text or supplementary information to allow independent assessment of the growth conclusions.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for the constructive review and positive assessment of the work's potential significance. We address the single major comment below and have revised the manuscript to incorporate additional supporting analysis.

read point-by-point responses

Referee: The central claim of an epitaxial beta-bismuthene/Sb2Te3 heterointerface rests on the assignment of observed atomic lattices to the buckled honeycomb beta phase rather than alpha-bismuthene, gamma phases, reconstructions, or Bi-Sb intermixing. No quantitative lattice constants, Fourier-transform analysis, symmetry identification, or bias-dependent imaging are supplied to exclude these alternatives, leaving the structural interpretation unsupported by the presented evidence.

Authors: We agree that the original manuscript would benefit from more quantitative structural characterization to firmly support the beta-bismuthene assignment. In the revised version, we have added high-resolution STM data with measured lattice constants (consistent with the known beta phase), Fourier-transform images confirming hexagonal symmetry, explicit symmetry analysis, and bias-dependent imaging across a range of voltages. These additions allow direct comparison to expected features of beta-bismuthene while addressing why alpha, gamma, or intermixing phases are inconsistent with the observed nucleation, morphology, and atomic contrast under our growth conditions. The new analysis appears in the revised results section and an expanded supplementary figure. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental STM study with direct observations and no derivations or fitted predictions

full rationale

The paper is a purely experimental report on epitaxial growth and STM imaging of bismuthene islands on Sb2Te3. It contains no equations, no parameter fitting, no derivations, and no modeling steps that could reduce to self-referential inputs. Central claims rest on direct imaging of nucleation, morphology, atomic structure, and defects under varied coverage and temperature conditions. No self-citation chains, uniqueness theorems, or ansatzes are invoked to support any derivation. The structural assignment to beta-bismuthene is an empirical interpretation of observed lattices, not a circular reduction of a claimed prediction to its own inputs. This is the normal case of a self-contained experimental study.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The paper rests on standard domain knowledge of 2D bismuth allotropes and STM interpretation in surface science; no free parameters or new entities are introduced in the abstract.

axioms (2)

domain assumption Beta-bismuthene denotes the buckled honeycomb monolayer structure of bismuth.
Standard definition assumed when identifying the atomic lattice in STM images.
domain assumption Sb2Te3 surface supports epitaxial growth of bismuth without intermixing under the stated conditions.
Invoked when attributing observed islands and defects to the heterointerface.

pith-pipeline@v0.9.0 · 5434 in / 1369 out tokens · 55916 ms · 2026-05-11T02:31:05.229802+00:00 · methodology

discussion (0)

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

IndisputableMonolith/Foundation/AlexanderDuality.lean alexander_duality_circle_linking unclear
Atomic-resolution images reveal indeed a hexagonal structure... period of nearly 0.43 nm... in perfect registry with the Te layer underneath... apparent height of approximately 0.5 nm... compatible with a bismuthene BL
IndisputableMonolith/Foundation/ArithmeticFromLogic.lean embed_strictMono_of_one_lt unclear
the formation of bismuthene was confirmed in all cases... hexagonal honeycomb structure... triangular morphology... epitaxial relationship with the Sb2Te3 substrate

Reference graph

Works this paper leans on

60 extracted references · 60 canonical work pages

[1]

M. Z. Hasan and C. L. Kane, Rev. Mod. Phys.82, 3045 (2010)

work page 2010
[2]

Schindler, Z

F. Schindler, Z. Wang, M. G. Vergniory, A. M. Cook, A. Mu- rani, S. Sengupta, A. Y . Kasumov, R. Deblock, S. Jeon, I. Droz- dov, H. Bouchiat, S. Guéron, A. Yazdani, B. A. Bernevig, and T. Neupert, Nature Physics14, 918 (2018)

work page 2018
[3]

Y . M. Koroteev, G. Bihlmayer, J. E. Gayone, E. V . Chulkov, S. Blügel, P. M. Echenique, and P. Hofmann, Phys. Rev. Lett. 93, 046403 (2004)

work page 2004
[4]

B. Q. Lv, T. Qian, and H. Ding, Rev. Mod. Phys.93, 025002 (2021)

work page 2021
[5]

Aktürk, O

E. Aktürk, O. Ü. Aktürk, and S. Ciraci, Physical Review B94, 014115. 6

work page
[6]

Hogan, P

C. Hogan, P. Lechifflart, S. Brozzesi, S. V oronovich- Solonevich, A. Melnikov, R. Flammini, S. Sanna, and K. Holt- grewe, Phys. Rev. B104, 245421 (2021)

work page 2021
[7]

Y . Lu, W. Xu, M. Zeng, G. Yao, L. Shen, M. Yang, Z. Luo, F. Pan, K. Wu, T. Das, P. He, J. Jiang, J. Martin, Y . P. Feng, H. Lin, and X.-s. Wang, Nano Letters15, 80 (2015), pMID: 25495154, https://doi.org/10.1021/nl502997v

work page doi:10.1021/nl502997v 2015
[8]

Y . Lyu, S. Daneshmandi, S. Huyan, and C.-W. Chu, Materials Today Physics18, 100380 (2021)

work page 2021
[9]

J. Gou, H. Bai, X. Zhang, Y . L. Huang, S. Duan, A. Ariando, S. A. Yang, L. Chen, Y . Lu, and A. T. S. Wee, Nature617, 67

work page
[10]

F. Reis, G. Li, L. Dudy, M. Bauernfeind, S. Glass, W. Hanke, R. Thomale, J. Schaefer, and R. Claessen, Science357(2016)

work page 2016
[11]

Murakami, Phys

S. Murakami, Phys. Rev. Lett.97, 236805 (2006)

work page 2006
[12]

M. Wada, S. Murakami, F. Freimuth, and G. Bihlmayer, Phys. Rev. B83, 121310 (2011)

work page 2011
[13]

Jiang, V

Z. Jiang, V . Soghomonian, and J. J. Heremans, Phys. Rev. Mater.6, 095003 (2022)

work page 2022
[14]

Kowalczyk, O

P. Kowalczyk, O. Mahapatra, D. McCarthy, W. Kozlowski, Z. Klusek, and S. Brown, Surface Science605, 659 (2011)

work page 2011
[15]

F. Song, J. W. Wells, Z. Jiang, M. Saxegaard, and E. Wahlström, ACS Applied Materials & Interfaces7, 8525 (2015), pMID: 25849866, https://doi.org/10.1021/acsami.5b00264

work page doi:10.1021/acsami.5b00264 2015
[16]

Tilgner, S

N. Tilgner, S. Wolff, S. Soubatch, T.-L. Lee, A. D. Peña Uni- garro, S. Gemming, F. S. Tautz, T. Seyller, C. Kumpf, F. Göhler, and P. Schädlich, Nature Communications16, 6171 (2025)

work page 2025
[17]

Hofmann, Progress in Surface Science81, 191 (2006)

P. Hofmann, Progress in Surface Science81, 191 (2006)

work page 2006
[18]

Nagao, J

T. Nagao, J. T. Sadowski, M. Saito, S. Yaginuma, Y . Fujikawa, T. Kogure, T. Ohno, Y . Hasegawa, S. Hasegawa, and T. Sakurai, Phys. Rev. Lett.93, 105501 (2004)

work page 2004
[19]

Hirahara, T

T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E. V . Chulkov, Y . M. Koroteev, P. M. Echenique, M. Saito, and S. Hasegawa, Phys. Rev. Lett.97, 146803 (2006)

work page 2006
[20]

S.-H. Bae, H. Kum, W. Kong, Y . Kim, C. Choi, B. Lee, P. Lin, Y . Park, and J. Kim, Nature Materials18, 550 (2019)

work page 2019
[21]

Walsh and C

L. Walsh and C. Hinkle, Applied Materials Today9, 504 (2017)

work page 2017
[22]

Hirahara, G

T. Hirahara, G. Bihlmayer, Y . Sakamoto, M. Yamada, H. Miyazaki, S.-i. Kimura, S. Blügel, and S. Hasegawa, Physi- cal Review Letters107, 166801 (2011)

work page 2011
[23]

Chen, J.-P

M. Chen, J.-P. Peng, H. Zhang, l. Jun, K. He, X.-C. Ma, and Q.-K. Xue, Applied Physics Letters101(2012)

work page 2012
[24]

Hirahara, N

T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Ai- tani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi, Phys. Rev. Lett.109, 227401 (2012)

work page 2012
[25]

F. Yang, L. Miao, Z. F. Wang, M.-Y . Yao, F. Zhu, Y . R. Song, M.-X. Wang, J.-P. Xu, A. V . Fedorov, Z. Sun, G. B. Zhang, C. Liu, F. Liu, D. Qian, C. L. Gao, and J.-F. Jia, Physical Review Letters109, 016801 (2012)

work page 2012
[26]

Miao, M.-Y

L. Miao, M.-Y . Yao, W. Ming, F. Zhu, C. Q. Han, Z. F. Wang, D. D. Guan, C. L. Gao, C. Liu, F. Liu, D. Qian, and J.-F. Jia, Physical Review B91, 205414 (2015)

work page 2015
[27]

A. Eich, M. Michiardi, G. Bihlmayer, X.-G. Zhu, J.-L. Mi, B. B. Iversen, R. Wiesendanger, P. Hofmann, A. A. Khajetoorians, and J. Wiebe, Phys. Rev. B90, 155414 (2014)

work page 2014
[28]

Zhang, F

K. Zhang, F. Yang, Y . Song, C. Liu, D. Qian, C. Gao, and J.-F. Jia, Applied Physics Letters107(2015)

work page 2015
[29]

S. H. Su, P. Y . Chuang, S. W. Chen, H. Y . Chen, Y . Tung, W.-C. Chen, C.-H. Wang, Y .-W. Yang, J. C. A. Huang, T.-R. Chang, H. Lin, H.-T. Jeng, C.-M. Cheng, K.-D. Tsuei, H. L. Su, and Y . C. Wu, Chemistry of Materials29, 8992 (2017)

work page 2017
[30]

S. H. Kim, K.-H. Jin, J. Park, J. S. Kim, S.-H. Jhi, T.-H. Kim, and H. W. Yeom, Physical Review B89, 155436 (2014)

work page 2014
[31]

I. I. Klimovskikh, S. V . Eremeev, D. A. Estyunin, S. O. Filnov, K. Shimada, V . A. Golyashov, N. Solovova, O. E. Tereshchenko, K. A. Kokh, A. S. Frolov, A. I. Sergeev, V . S. Stolyarov, V . M. Trontl, L. Petaccia, G. Di Santo, M. Tallar- ida, J. Dai, S. Blanco-Canosa, T. Valla, A. M. Shikin, and E. V . Chulkov, Materials Today Advances23, 100511 (2024)

work page 2024
[32]

F. Yang, L. Miao, Z. F. Wang, M.-Y . Yao, F. Zhu, Y . R. Song, M.-X. Wang, J.-P. Xu, A. V . Fedorov, Z. Sun, G. B. Zhang, C. Liu, F. Liu, D. Qian, C. L. Gao, and J.-F. Jia, Phys. Rev. Lett. 109, 016801 (2012)

work page 2012
[33]

Chun-Lei, Q

G. Chun-Lei, Q. Dong, L. Can-Hua, J. Jin-Feng, and L. Feng, Chinese Physics B22, 067304 (2013)

work page 2013
[34]

Zhang, C.-X

H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, Nature Physics5, 438 (2009)

work page 2009
[35]

J. A. Hutasoit and T. D. Stanescu, Phys. Rev. B84, 085103 (2011)

work page 2011
[36]

T. V . Menshchikova, M. M. Otrokov, S. S. Tsirkin, D. A. Samorokov, V . V . Bebneva, A. Ernst, V . M. Kuznetsov, and E. V . Chulkov, Nano Letters13, 6064 (2013), pMID: 24274792, https://doi.org/10.1021/nl403312y

work page doi:10.1021/nl403312y 2013
[37]

Essert, V

S. Essert, V . Krueckl, and K. Richter, New Journal of Physics 16, 113058 (2014)

work page 2014
[38]

K.-H. Jin, H. W. Yeom, and S.-H. Jhi, Phys. Rev. B93, 075308 (2016)

work page 2016
[39]

Holtgrewe, S

K. Holtgrewe, S. Mahatha, P. Sheverdyaeva, P. Moras, R. Flam- mini, S. Colonna, F. Ronci, M. Papagno, A. Barla, L. Petaccia, Z. Aliev, M. Babanly, E. Chulkov, S. Sanna, C. Hogan, and C. Carbone, Scientific Reports10, 14619 (2020)

work page 2020
[40]

I. A. Nechaev, I. Aguilera, V . De Renzi, A. di Bona, A. Lodi Rizzini, A. M. Mio, G. Nicotra, A. Politano, S. Scalese, Z. S. Aliev, M. B. Babanly, C. Friedrich, S. Blügel, and E. V . Chulkov, Phys. Rev. B91, 245123 (2015)

work page 2015
[41]

Ne ˇcas and P

D. Ne ˇcas and P. Klapetek, Central European Journal of Physics 10(2011)

work page 2011
[42]

Abrikosov, L

N. Abrikosov, L. Ivanova, and T. Fetisova, Izv. Akad. Nauk SSSR, Neorg. Mater.12, 810 (1976)

work page 1976
[43]

T. L. Anderson and H. B. Krause, Acta Crystallographica Sec- tion B30, 1307 (1974)

work page 1974
[44]

G. Wang, X. Zhu, J. Wen, X. Chen, K. He, L. Wang, X. Ma, Y . Liu, X. Dai, Z. Fang, J. Jia, and Q. Xue, Nano Research3, 874 (2010)

work page 2010
[45]

Urazhdin, D

S. Urazhdin, D. Bilc, S. H. Tessmer, S. D. Mahanti, T. Kyratsi, and M. G. Kanatzidis, Phys. Rev. B66, 161306 (2002)

work page 2002
[46]

Zhang, P

T. Zhang, P. Cheng, X. Chen, J.-F. Jia, X. Ma, K. He, L. Wang, H. Zhang, X. Dai, Z. Fang, X. Xie, and Q.-K. Xue, Phys. Rev. Lett.103, 266803 (2009)

work page 2009
[47]

Jiang, Y

Y . Jiang, Y . Y . Sun, M. Chen, Y . Wang, Z. Li, C. Song, K. He, L. Wang, X. Chen, Q.-K. Xue, X. Ma, and S. B. Zhang, Phys. Rev. Lett.108, 066809 (2012)

work page 2012
[48]

Sinha and S

S. Sinha and S. Manna, Surfaces and Interfaces62, 106171 (2025)

work page 2025
[49]

Plucinski, A

L. Plucinski, A. Herdt, S. Fahrendorf, G. Bihlmayer, G. Mus- sler, S. Döring, J. Kampmeier, F. Matthes, D. Bürgler, D. Grutz- macher, S. Blügel, and C. Schneider, Journal of Applied Physics 113, 053706 (2013)

work page 2013
[50]

Netsou, D

A.-M. Netsou, D. Muzychenko, H. Dausy, T. Chen, F. Song, K. Schouteden, M. Bael, and C. Van Haesendonck, ACS Nano 14, 13172 (2020)

work page 2020
[51]

J. Dai, D. West, X. Wang, Y . Wang, D. Kwok, S.-W. Cheong, S. B. Zhang, and W. Wu, Phys. Rev. Lett.117, 106401 (2016)

work page 2016
[52]

Liu, X.-L

C.-X. Liu, X.-L. Qi, H. Zhang, X. Dai, Z. Fang, and S.-C. Zhang, Phys. Rev. B82, 045122 (2010)

work page 2010
[53]

Jnawali, T

G. Jnawali, T. Wagner, H. Hattab, R. Möller, and M. Horn-von Hoegen, Phys. Rev. B79, 193306 (2009). 7

work page 2009
[54]

J. Dong, L. Zhang, X. Dai, and F. Ding, Nature Communica- tions11(2020)

work page 2020
[55]

Rodríguez-Fernández, K

C. Rodríguez-Fernández, K. Akius, M. Morais de Lima, A. Cantarero, J. M. van Ruitenbeek, and C. Sabater, Materials Science and Engineering: B270, 115240 (2021)

work page 2021
[56]

Mönig, J

H. Mönig, J. Sun, Y . M. Koroteev, G. Bihlmayer, J. Wells, E. V . Chulkov, K. Pohl, and P. Hofmann, Phys. Rev. B72, 085410 (2005)

work page 2005
[57]

Ivaništšev, R

V . Ivaništšev, R. R. Nazmutdinov, and E. Lust, Surface Science 604, 1919 (2010)

work page 1919
[58]

Flammini, S

R. Flammini, S. Colonna, C. Hogan, S. K. Mahatha, M. Pa- pagno, A. Barla, P. M. Sheverdyaeva, P. Moras, Z. S. Aliev, M. B. Babanly, E. V . Chulkov, C. Carbone, and F. Ronci, Nan- otechnology29, 065704 (2018)

work page 2018
[59]

Hogan, K

C. Hogan, K. Holtgrewe, F. Ronci, S. Colonna, S. Sanna, P. Moras, P. M. Sheverdyaeva, S. Mahatha, M. Papagno, Z. S. Aliev, M. Babanly, E. V . Chulkov, C. Carbone, and R. Flammini, ACS Nano13, 10481 (2019), pMID: 31469534, https://doi.org/10.1021/acsnano.9b04377

work page doi:10.1021/acsnano.9b04377 2019
[60]

Flammini, C

R. Flammini, C. Hogan, S. Colonna, F. Ronci, M. Satta, M. Pa- pagno, Z. S. Aliev, S. V . Eremeev, E. V . Chulkov, Z. R. Benher, S. Gardonio, L. Petaccia, G. Di Santo, C. Carbone, P. Moras, and P. M. Sheverdyaeva, Applied Physics Reviews12, 011336 (2025)

work page 2025