arxiv: 2605.13211 · v1 · submitted 2026-05-13 · ❄️ cond-mat.mes-hall

Recognition: 2 theorem links

· Lean Theorem

Highly Efficient Exciton Modulation in MoSe₂/PdSe₂ Heterostructures

Bing Wu, Caterina Cocchi, Danae Katrisoti, Domenico De Fazio, Emma Contin, Giancarlo Soavi, Giovanni Antonio Salvatore, Ioannis Paradisanos, Kenji Watanabe, Leonardo Puppulin, Micol Bertolotti, Muhammad Sufyan Ramzan, Nouha Loudhaief, Petr Rozhin, Stefano Dal Conte, Takashi Taniguchi, Till Weickhardt, Zden\v{e}k Sofer

Pith reviewed 2026-05-14 01:59 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall

keywords exciton modulationvan der Waals heterostructurephotoluminescence enhancementMoSe2PdSe2type-I heterostructureA-exciton emissionquantum yield

0 comments

The pith

A MoSe₂/PdSe₂ van der Waals stack enhances room-temperature A-exciton emission sixfold via interlayer coupling.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows that forming a type-I heterostructure between monolayer MoSe₂ and PdSe₂ produces a clear rise in light emission efficiency at room temperature. The A-exciton photoluminescence increases roughly six times, pushing the quantum yield from about 1 percent in bare MoSe₂ to 6 percent in the stack. This gain coincides with strong quenching of the B-exciton, which the measurements link to electronic coupling across the layers that funnels population into the brighter radiative channel. Power-dependent and temperature-dependent data further indicate that annihilation losses drop and relaxation paths shift, while the effect appears across a wide excitation range rather than at a single resonance.

Core claim

In a type-I MoSe₂/PdSe₂ van der Waals heterostructure, interlayer electronic coupling redistributes exciton populations, yielding a ∼6-fold enhancement of room-temperature A-exciton emission (photoluminescence quantum yield of 6 percent versus ∼1 percent for as-exfoliated monolayer MoSe₂) together with pronounced B-exciton quenching.

What carries the argument

Interlayer electronic coupling in the type-I heterostructure that shifts exciton populations toward the radiative A-exciton channel

If this is right

Emission efficiency rises without chemical doping, defect passivation, or deliberate strain.
Exciton-exciton annihilation is suppressed under higher excitation densities.
The enhancement operates over a broad excitation window from 450 to 725 nm.
Low-temperature measurements show a crossover to overall quenched emission, revealing altered relaxation routes.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

The same coupling principle could be tested in other type-I pairs to map how band alignment controls exciton flow.
Device designs might exploit this redistribution to improve brightness in 2D light-emitting structures at room temperature.
Direct probes of interlayer charge transfer rates could quantify the population shift and predict performance in related stacks.

Load-bearing premise

The emission boost and B-exciton suppression arise from electronic coupling at the interface rather than from strain, defects, or dielectric changes caused by fabrication.

What would settle it

Fabricate a control stack with a spacer layer that blocks electronic coupling but preserves similar dielectric environment and interface strain, then measure whether the sixfold A-exciton gain disappears.

Figures

Figures reproduced from arXiv: 2605.13211 by Bing Wu, Caterina Cocchi, Danae Katrisoti, Domenico De Fazio, Emma Contin, Giancarlo Soavi, Giovanni Antonio Salvatore, Ioannis Paradisanos, Kenji Watanabe, Leonardo Puppulin, Micol Bertolotti, Muhammad Sufyan Ramzan, Nouha Loudhaief, Petr Rozhin, Stefano Dal Conte, Takashi Taniguchi, Till Weickhardt, Zden\v{e}k Sofer.

**Figure 1.** Figure 1: Structural and electronic properties of the MoSe2/PdSe2 heterostructure on an hBN substrate: (a) Optical image of the MoSe2/PdSe2/hBN heterostructure and (b) electronic band structures and projected density of states (PDOS) of a model heterostructure formed by 1L MoSe2 and 4L PdSe2. The vacuum level is set to 0 eV, and the Fermi level is marked with a horizontal dashed line in the mid-gap. The red arrow in… view at source ↗

**Figure 2.** Figure 2: PL spectra of the 1L region and the HS region (a) A-exciton PL enhancement in the HS region at 514 nm excitation (b) B-exciton quenching in the HS region. PL intensity is reported in arbitrary units (a.u.), corresponding to detector counts. ∼6× relative to the 1L region. Assuming comparable optical absorption at the excitation wavelength and identical light extraction efficiencies, we estimate an externa… view at source ↗

**Figure 3.** Figure 3: MoSe2/PdSe2 HS PL mapping a) A-exciton PL intensity map, IA (b) B/A exciton intensity ratio map, IB/IA (a) (a) (b) [PITH_FULL_IMAGE:figures/full_fig_p005_3.png] view at source ↗

**Figure 4.** Figure 4: Laser power-dependent PL spectra of A-exciton at (a) room temperature and (b) cryogenic temperature. The reported power denotes the incident laser power at the sample. α ≃ 0.71 and α ≃ 0.85, respectively, which is attributed to EEA at high carrier densities [60]. Importantly, unlike the room-temperature behavior, the large PL enhancement disappears at 78 K, with the HS region exhibiting lower intensity th… view at source ↗

**Figure 5.** Figure 5: Temperature-dependent PL measurements of (a) the 1L region and (b) the HS region (c) Temperature-dependent peak PL measurements of the 1L region and the HS region (d) Temperature dependence of the 1L region and the HS region B-exciton-to-A-exciton intensity ratio. ing [47], which can limit dark–bright exciton conversion and intervalley relaxation [61, 62], thereby reducing the repopulation of the radiative… view at source ↗

**Figure 6.** Figure 6: (a) PLE spectra of the 1L and the HS (b) PLE intensity ratio between the HS and the 1L. that interfacial band alignment dictates the transition between emission enhancement and suppression. CONCLUSIONS We have shown that interlayer coupling in MoSe2/PdSe2 HSs enables strong enhancement of A-exciton emission in 1L MoSe2, increasing the PLQY from ∼1% in the reference monolayer to 6% at room temperature. Our … view at source ↗

read the original abstract

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\sim$1 % for as-exfoliated monolayer MoSe$_2$. This enhancement is accompanied by strong quenching of the B-exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm, ruling out a resonance-specific mechanism. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or strain.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

MoSe2/PdSe2 delivers a clear six-fold A-exciton PL boost to 6% PLQY but the interlayer-coupling story needs explicit controls for strain and defects.

read the letter

The main thing to know is that this stack produces a straightforward six-fold rise in room-temperature A-exciton emission, taking the PLQY from roughly 1% in bare monolayer MoSe2 to 6%. The B-exciton is strongly quenched at the same time, and the authors link both changes to type-I interlayer coupling that funnels population into the radiative A channel. Power-dependent data show reduced exciton-exciton annihilation, temperature scans reveal a low-T crossover, and broadband PLE from 450-725 nm argues against any resonance-specific effect. Those measurements are concrete and worth having on record for people working on TMD emission efficiency. The paper does a clean job presenting the raw PL trends and the PLE map without overclaiming the numbers. The soft spot is the lack of direct checks on interface artifacts. No Raman or AFM strain maps appear, no dielectric-matched control like hBN/MoSe2 is shown, and defect-density comparisons are not described. Without those, the redistribution interpretation still rests on the assumption that strain, defects, or dielectric screening are negligible. The PLQY protocol itself is stated but not broken down with error bars or calibration details in the abstract. If the full manuscript supplies those controls with clear data, the claim holds up better; otherwise the mechanism part stays provisional. This work is aimed at experimentalists in 2D optoelectronics who need simple stacking routes to raise emission without chemical changes. It shows honest data handling and a focused experimental design, so it deserves a serious referee even if the interpretation needs tightening in revision.

Referee Report

2 major / 2 minor

Summary. The manuscript reports a ~6-fold enhancement of room-temperature A-exciton photoluminescence in a type-I MoSe₂/PdSe₂ van der Waals heterostructure, achieving a PLQY of 6% compared to ~1% for as-exfoliated monolayer MoSe₂. The enhancement is accompanied by B-exciton quenching and is attributed to interlayer electronic coupling that redistributes exciton populations toward the radiative A channel. Supporting evidence includes power- and temperature-dependent PL data showing suppressed exciton-exciton annihilation and a low-temperature crossover to quenched emission, plus broadband PLE spectroscopy (450–725 nm) ruling out resonance-specific effects.

Significance. If the attribution to interlayer coupling is confirmed, the result offers a non-chemical route to enhance emission efficiency in 2D semiconductors by exploiting type-I vdW heterostructures for exciton population redistribution. This approach could complement existing strategies such as dielectric engineering or defect passivation and may inform design of more efficient TMD-based light emitters. The broadband PLE data and temperature-dependent crossover provide useful constraints on possible mechanisms.

major comments (2)

[Abstract and Results] Abstract and Results section on PLQY: The stated PLQY values (6% vs ~1%) are presented without quantitative error bars, sample-to-sample statistics, or an explicit measurement protocol (reference standard, absorption correction, or integration method). This weakens the quantitative foundation of the central ~6-fold enhancement claim.
[Results and Discussion] Results and Discussion on mechanism: The interpretation that A-exciton enhancement and B-exciton quenching arise specifically from type-I interlayer electronic coupling lacks controls to exclude strain, interface defects, or dielectric screening. No Raman/AFM strain maps, hBN/MoSe₂ dielectric-matched controls, or defect-density comparisons (e.g., low-T linewidths) are reported, so alternative interface artifacts remain viable explanations for the observed spectral changes.

minor comments (2)

[Methods] Methods: Provide additional details on the dry-transfer procedure, twist-angle control, and any annealing conditions to allow reproduction of the heterostructure quality.
[Figures] Figures: Ensure consistent normalization and labeling of intensity scales across monolayer and heterostructure PL spectra so that the enhancement factor can be directly verified from the plots.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their constructive feedback and positive assessment of the significance of our results. We address each major comment below and will revise the manuscript to improve the quantitative rigor of the PLQY claims and to clarify the mechanistic discussion.

read point-by-point responses

Referee: [Abstract and Results] Abstract and Results section on PLQY: The stated PLQY values (6% vs ~1%) are presented without quantitative error bars, sample-to-sample statistics, or an explicit measurement protocol (reference standard, absorption correction, or integration method). This weakens the quantitative foundation of the central ~6-fold enhancement claim.

Authors: We agree that the PLQY values require more rigorous presentation. In the revised manuscript we will report the values with quantitative error bars obtained from repeated measurements, include sample-to-sample statistics from multiple devices, and add an explicit methods subsection detailing the protocol: use of rhodamine 6G as reference standard, absorption corrections derived from reflectance spectra, and integration over the full emission band. These additions will strengthen the quantitative foundation of the ~6-fold enhancement. revision: yes
Referee: [Results and Discussion] Results and Discussion on mechanism: The interpretation that A-exciton enhancement and B-exciton quenching arise specifically from type-I interlayer electronic coupling lacks controls to exclude strain, interface defects, or dielectric screening. No Raman/AFM strain maps, hBN/MoSe₂ dielectric-matched controls, or defect-density comparisons (e.g., low-T linewidths) are reported, so alternative interface artifacts remain viable explanations for the observed spectral changes.

Authors: We acknowledge that dedicated controls would further exclude alternative explanations. The existing data (power-dependent suppression of annihilation, temperature-dependent crossover, and broadband PLE) are consistent with interlayer coupling in a type-I alignment. In revision we will expand the discussion to explicitly consider strain, defects, and dielectric screening, and will add a comparison of low-temperature linewidths showing no significant broadening. However, new Raman/AFM maps or hBN control samples would require additional fabrication and measurements that are beyond the scope of the current revision cycle; we will note this limitation and the value of such controls for future studies. revision: partial

Circularity Check

0 steps flagged

No circularity: experimental observations with no derivation chain

full rationale

The paper reports direct experimental measurements of ~6-fold A-exciton PL enhancement and B-exciton quenching in a MoSe2/PdSe2 heterostructure, supported by power/temperature dependence and broadband PLE data. No mathematical derivations, first-principles predictions, fitted parameters renamed as outputs, or self-referential equations appear in the abstract or described claims. The interpretation attributing the effect to interlayer coupling is presented as a reading of the observations rather than a step that reduces to its own inputs by construction. No self-citations, ansatzes, or uniqueness theorems are invoked as load-bearing elements. This is a standard experimental report whose central claims rest on measured spectra and controls internal to the dataset.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The work is experimental and draws on standard semiconductor physics for type-I alignment and exciton dynamics; no new free parameters or invented entities are introduced.

axioms (1)

domain assumption Type-I band alignment exists in the MoSe2/PdSe2 heterostructure and enables interlayer exciton population transfer
Invoked to explain the redistribution toward the radiative A-exciton channel

pith-pipeline@v0.9.0 · 5612 in / 1256 out tokens · 52613 ms · 2026-05-14T01:59:30.156179+00:00 · methodology

discussion (0)

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

IndisputableMonolith/Cost/FunctionalEquation.lean washburn_uniqueness_aczel unclear
pronounced ∼6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe₂/PdSe₂ van der Waals heterostructure... interlayer electronic coupling that redistributes exciton populations
IndisputableMonolith/Foundation/RealityFromDistinction.lean reality_from_one_distinction unclear
DFT calculations... valence band alignment... hybridization... B-exciton quenching

Reference graph

Works this paper leans on

73 extracted references · 73 canonical work pages

[1]

C. Wang, F. Yang, and Y. Gao, Nanoscale Adv.2, 4323 (2020)

work page 2020
[2]

Salehzadeh, M

O. Salehzadeh, M. Djavid, N. H. Tran, I. Shih, and Z. Mi, Nano Lett.15, 5302 (2015)

work page 2015
[3]

Aharonovich, D

I. Aharonovich, D. Englund, and M. Toth, Nat. Photonics 10, 631 (2016)

work page 2016
[4]

H. Kim, S. Z. Uddin, N. Higashitarumizu, E. Rabani, and A. Javey, Science373, 448 (2021)

work page 2021
[5]

M. A. Reshchikov, Phys. Status Solidi A218, 2000101 (2021)

work page 2021
[6]

Valerini, A

D. Valerini, A. Cret´ ı, M. Lomascolo, L. Manna, R. Cin- golani, and M. Anni, Phys. Rev. B71, 235409 (2005)

work page 2005
[7]

Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett.91, 141101 (2007)

work page 2007
[8]

Zheng, Y

W. Zheng, Y. Jiang, X. Hu, H. Li, Z. Zeng, X. Wang, and A. Pan, Adv. Opt. Mater.6, 1800420 (2018)

work page 2018
[9]

J. S. Ross, P. Klement, A. M. Jones, N. J. Ghimire, J. Yan, D. G. Mandrus, T. Taniguchi, K. Watanabe, K. Kitamura, W. Yao, D. H. Cobden, and X. Xu, Nat. Nanotechnol.9, 268 (2014)

work page 2014
[10]

K.Lin, J.Xing, L.N.Quan, F.P.G.DeArquer, X.Gong, J. Lu, L. Xie, W. Zhao, D. Zhang, C. Yan, W. Li, X. Liu, Y. Lu, J. Kirman, E. H. Sargent, Q. Xiong, and Z. Wei, Nature562, 245 (2018)

work page 2018
[11]

W. Bai, T. Xuan, H. Zhao, H. Dong, X. Cheng, L. Wang, and R. Xie, Adv. Mater.35, 2302283 (2023)

work page 2023
[12]

Liu, P.-T

K.TuongLy, R.-W.Chen-Cheng, H.-W.Lin, Y.-J.Shiau, S.-H. Liu, P.-T. Chou, C.-S. Tsao, Y.-C. Huang, and Y. Chi, Nat. Photonics11, 63 (2017)

work page 2017
[13]

W. Zhao, R. M. Ribeiro, and G. Eda, Acc. Chem. Res. 48, 91 (2015)

work page 2015
[14]

Splendiani, L

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, Nano Lett.10, 1271 (2010)

work page 2010
[15]

Kyl¨ anp¨ a¨ a and H.-P

I. Kyl¨ anp¨ a¨ a and H.-P. Komsa, Phys. Rev. B92, 205418 (2015)

work page 2015
[16]

Mueller and E

T. Mueller and E. Malic, npj 2D Mater. Appl.2, 29 (2018)

work page 2018
[17]

Xiao, G.-B

D. Xiao, G.-B. Liu, W. Feng, X. Xu, and W. Yao, Phys. Rev. Lett.108, 196802 (2012)

work page 2012
[18]

Gao, Small13, 1603994 (2017)

L. Gao, Small13, 1603994 (2017)

work page 2017
[19]

C. Li, P. Zhou, and D. W. Zhang, J. Semicond.38, 031005 (2017)

work page 2017
[20]

A. K. Geim and I. V. Grigorieva, Nature499, 419 (2013)

work page 2013
[21]

A. Raja, A. Chaves, J. Yu, G. Arefe, H. M. Hill, A. F. Rigosi, T. C. Berkelbach, P. Nagler, C. Sch¨ uller, T. Korn, C. Nuckolls, J. Hone, L. E. Brus, T. F. Heinz, D. R. Reich- man, and A. Chernikov, Nat. Commun.8, 15251 (2017)

work page 2017
[22]

Chernikov, T

A. Chernikov, T. C. Berkelbach, H. M. Hill, A. Rigosi, Y. Li, B. Aslan, D. R. Reichman, M. S. Hybertsen, and T. F. Heinz, Phys. Rev. Lett.113, 076802 (2014)

work page 2014
[23]

Amani, D.-H

M. Amani, D.-H. Lien, D. Kiriya, J. Xiao, A. Azcatl, J. Noh, S. R. Madhvapathy, R. Addou, S. Kc, M. Dubey, K. Cho, R. M. Wallace, S.-C. Lee, J.-H. He, J. W. Ager, X. Zhang, E. Yablonovitch, and A. Javey, Science350, 1065 (2015)

work page 2015
[24]

Rhodes, S

D. Rhodes, S. H. Chae, R. Ribeiro-Palau, and J. Hone, Nat. Mater.18, 541 (2019)

work page 2019
[25]

Cadiz, E

F. Cadiz, E. Courtade, C. Robert, G. Wang, Y. Shen, H. Cai, T. Taniguchi, K. Watanabe, H. Carrere, D. La- garde, M. Manca, T. Amand, P. Renucci, S. Tongay, X.Marie,andB.Urbaszek,Phys.Rev.X7,021026(2017)

work page 2017
[26]

Wierzbowski, J

J. Wierzbowski, J. Klein, F. Sigger, C. Straubinger, M. Kremser, T. Taniguchi, K. Watanabe, U. Wurstbauer, A. W. Holleitner, M. Kaniber, K. M¨ uller, and J. J. Finley, Sci. Rep.7, 12383 (2017)

work page 2017
[27]

H. Ryu, S. C. Hong, K. Kim, Y. Jung, Y. Lee, K. Lee, Y. Kim, H. Kim, K. Watanabe, T. Taniguchi, J. Kim, K. Kim, H. Cheong, and G.-H. Lee, Nanoscale16, 5836 (2024)

work page 2024
[28]

Q. Li, A. Alfrey, J. Hu, N. Lydick, E. Paik, B. Liu, H. Sun, Y. Lu, R. Wang, S. Forrest, and H. Deng, Nat. Commun.14, 1837 (2023)

work page 2023
[29]

A. O. A. Tanoh, J. Alexander-Webber, Y. Fan, N. Gau- riot, J. Xiao, R. Pandya, Z. Li, S. Hofmann, and A. Rao, Nanoscale Adv.3, 4216 (2021)

work page 2021
[30]

Z. Li, H. Bretscher, Y. Zhang, G. Delport, J. Xiao, A. Lee, S. D. Stranks, and A. Rao, Nat. Commun.12, 6044 (2021)

work page 2021
[31]

H. Li, A. W. Contryman, X. Qian, S. M. Ardakani, Y. Gong, X. Wang, J. M. Weisse, C. H. Lee, J. Zhao, P. M. Ajayan, J. Li, H. C. Manoharan, and X. Zheng, Nat. Commun.6, 7381 (2015)

work page 2015
[32]

H. Lee, Y. Koo, J. Choi, S. Kumar, H.-T. Lee, G. Ji, S. H. Choi, M. Kang, K. K. Kim, H.-R. Park, H. Choo, and K.-D. Park, Sci. Adv.8, eabm5236 (2022)

work page 2022
[33]

H. H. Fang, B. Han, C. Robert, M. A. Semina, D. Lagarde, E. Courtade, T. Taniguchi, K. Watanabe, T. Amand, B. Urbaszek, M. M. Glazov, and X. Marie, Phys. Rev. Lett.123, 067401 (2019)

work page 2019
[34]

H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, Nano Lett.13, 3626 (2013)

work page 2013
[35]

Y. Liu, N. O. Weiss, X. Duan, H.-C. Cheng, Y. Huang, and X. Duan, Nat. Rev. Mater.1, 16042 (2016)

work page 2016
[36]

M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, 10 X. C. Zeng, and H. Zhao, Nanoscale Horiz.2, 31 (2017)

work page 2017
[37]

M. A. Altvater, C. E. Stevens, N. A. Pike, J. R. Hen- drickson, R. Rao, S. Krylyuk, A. V. Davydov, D. Jariwala, R. Pachter, M. Snure, and N. R. Glavin, npj 2D Mater. Appl.9, 31 (2025)

work page 2025
[38]

J. Duan, P. Chava, M. Ghorbani-Asl, D. Erb, L. Hu, A. V. Krasheninnikov, H. Schneider, L. Rebohle, A. Erbe, M. Helm, Y. Zeng, S. Zhou, and S. Prucnal, Adv. Funct. Mater.31, 2104960 (2021)

work page 2021
[39]

Zheng, B

W. Zheng, B. Zheng, C. Yan, Y. Liu, X. Sun, Z. Qi, T. Yang, Y. Jiang, W. Huang, P. Fan, F. Jiang, W. Ji, X. Wang, and A. Pan, Adv. Sci.6, 1802204 (2019)

work page 2019
[40]

M. S. Ramzan and C. Cocchi, Nanomaterials13, 2740 (2023)

work page 2023
[41]

Dandu, R

M. Dandu, R. Biswas, S. Das, S. Kallatt, S. Chatterjee, M. Mahajan, V. Raghunathan, and K. Majumdar, ACS Nano13, 4795 (2019)

work page 2019
[42]

M. Long, Y. Wang, P. Wang, X. Zhou, H. Xia, C. Luo, S. Huang, G. Zhang, H. Yan, Z. Fan, X. Wu, X. Chen, W. Lu, and W. Hu, ACS Nano13, 2511 (2019)

work page 2019
[43]

Slavich, G

A. Slavich, G. Ermolaev, N. Pak, D. Grudinin, K. Kravtsov, M. Tatmyshevskiy, V. Semkin, A. Syuy, A. Mazitov, A. Minnekhanov, I. Kazantsev, D. Dyubo, A. Eghbali, D. Yakubovsky, M. Kashchenko, M. Podobrii, E. Titova, A. Melentev, E. Zhukova, G. Tselikov, I. Kruglov, D. Svintsov, S. Novikov, A. Vyshnevyy, A. Ar- senin, K. S. Novoselov, and V. Volkov, Nat. Co...

work page 2025
[44]

Tongay, J

S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, Nano Lett.12, 5576 (2012)

work page 2012
[45]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, Nat. Commun.4, 1474 (2013)

work page 2013
[46]

M. M. Ugeda, A. J. Bradley, S.-F. Shi, F. H. Da Jornada, Y. Zhang, D. Y. Qiu, W. Ruan, S.-K. Mo, Z. Hussain, Z.- X. Shen, F. Wang, S. G. Louie, and M. F. Crommie, Nat. Mater.13, 1091 (2014)

work page 2014
[47]

G. Wang, A. Chernikov, M. M. Glazov, T. F. Heinz, X. Marie, T. Amand, and B. Urbaszek, Rev. Mod. Phys. 90, 021001 (2018)

work page 2018
[48]

Lu, G.-H

L.-S. Lu, G.-H. Chen, H.-Y. Cheng, C.-P. Chuu, K.-C. Lu, C.-H. Chen, M.-Y. Lu, T.-H. Chuang, D.-H. Wei, W.- C. Chueh, W.-B. Jian, M.-Y. Li, Y.-M. Chang, L.-J. Li, and W.-H. Chang, ACS Nano14, 4963 (2020)

work page 2020
[49]

A. D. Oyedele, S. Yang, L. Liang, A. A. Puretzky, K. Wang, J. Zhang, P. Yu, P. R. Pudasaini, A. W. Ghosh, Z. Liu, C. M. Rouleau, B. G. Sumpter, M. F. Chisholm, W. Zhou, P. D. Rack, D. B. Geohegan, and K. Xiao, J. Am. Chem. Soc.139, 14090 (2017)

work page 2017
[50]

Kim and H

H.-g. Kim and H. J. Choi, Phys. Rev. B103, 165419 (2021)

work page 2021
[51]

Zhang, T.-R

Y. Zhang, T.-R. Chang, B. Zhou, Y.-T. Cui, H. Yan, Z. Liu, F. Schmitt, J. Lee, R. Moore, Y. Chen, H. Lin, H.-T. Jeng, S.-K. Mo, Z. Hussain, A. Bansil, and Z.-X. Shen, Nat. Nanotechnol.9, 111 (2014)

work page 2014
[52]

Zhang, S

Q. Zhang, S. Zhang, B. A. Sperling, and N. V. Nguyen, J. Electron. Mater.48, 6446 (2019)

work page 2019
[53]

M. Liu, L. Qi, Y. Zou, N. Zhang, F. Zhang, H. Xiang, Z. Liu, M. Qin, X. Sun, Y. Zheng, C. Lin, D. Li, and S. Li, Nat. Commun.16, 2774 (2025)

work page 2025
[54]

Amani, P

M. Amani, P. Taheri, R. Addou, G. H. Ahn, D. Kiriya, D.-H. Lien, J. W. Ager, R. M. Wallace, and A. Javey, Nano Lett.16, 2786 (2016)

work page 2016
[55]

Y. Sun, Z. Zhou, Z. Huang, J. Wu, L. Zhou, Y. Cheng, J. Liu, C. Zhu, M. Yu, P. Yu, W. Zhu, Y. Liu, J. Zhou, B. Liu, H. Xie, Y. Cao, H. Li, X. Wang, K. Liu, X. Wang, J. Wang, L. Wang, and W. Huang, Adv. Mater.31, 1806562 (2019)

work page 2019
[56]

Yamaoka, H

T. Yamaoka, H. E. Lim, S. Koirala, X. Wang, K. Shi- nokita, M. Maruyama, S. Okada, Y. Miyauchi, and K. Matsuda, Adv. Funct. Mater.28, 1801021 (2018)

work page 2018
[57]

Varjamo, C

S.-T. Varjamo, C. Edwards, Y. Zhou, R. Fang, S. H. Hosseini Shokouh, and Z. Sun, Nano Lett.25, 4379 (2025)

work page 2025
[58]

R. H. Lone, S. Gaonkar, B. M. Kumar, and E. S. Kannan, Nanoscale17, 1473 (2025)

work page 2025
[59]

Yuan and L

L. Yuan and L. Huang, Nanoscale7, 7402 (2015)

work page 2015
[60]

Cai, W.-Y

C.-S. Cai, W.-Y. Lai, P.-H. Liu, T.-C. Chou, R.-Y. Liu, C.-M. Lin, S. Gwo, and W.-T. Hsu, Nano Lett.24, 2773 (2024)

work page 2024
[61]

Robert, X

S.Brem, A.Ekman, D.Christiansen, F.Katsch, M.Selig, C. Robert, X. Marie, B. Urbaszek, A. Knorr, and E. Malic, Nano Lett.20, 2849 (2020)

work page 2020
[62]

Selig, G

M. Selig, G. Bergh¨ auser, A. Raja, P. Nagler, C. Sch¨ uller, T. F. Heinz, T. Korn, A. Chernikov, E. Malic, and A. Knorr, Nat. Commun.7, 13279 (2016)

work page 2016
[63]

Estrada-Real, I

A. Estrada-Real, I. Paradisanos, P. R. Wiecha, J.-M. Poumirol, A. Cuche, G. Agez, D. Lagarde, X. Marie, V. Larrey, J. M¨ uller, G. Larrieu, V. Paillard, and B. Ur- baszek, Commun. Phys.6, 102 (2023)

work page 2023
[64]

Castellanos-Gomez, M

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. Van Der Zant, and G. A. Steele, 2D Mater.1, 011002 (2014)

work page 2014
[65]

Hohenberg and W

P. Hohenberg and W. Kohn, Phys. Rev.136, B864–B871 (1964)

work page 1964
[66]

Kresse and J

G. Kresse and J. Furthm¨ uller, Phys. Rev. B54, 11169–11186 (1996)

work page 1996
[67]

Kohn and L

W. Kohn and L. J. Sham, Phys. Rev.140, A1133–A1138 (1965)

work page 1965
[68]

P. E. Bl¨ ochl, Phys. Rev. B50, 17953–17979 (1994)

work page 1994
[69]

J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett.77, 3865–3868 (1996)

work page 1996
[70]

M. Dion, H. Rydberg, E. Schr¨ oder, D. C. Langreth, and B. I. Lundqvist, Phys. Rev. Lett.92, 246401 (2004)

work page 2004
[71]

A. D. Oyedele, S. Yang, L. Liang, A. A. Puretzky, K. Wang, J. Zhang, P. Yu, P. R. Pudasaini, A. W. Ghosh, Z. Liu, C. M. Rouleau, B. G. Sumpter, M. F. Chisholm, W. Zhou, P. D. Rack, D. B. Geohegan, and K. Xiao, J. Am. Chem. Soc.139, 14090–14097 (2017)

work page 2017
[72]

Hjorth Larsen, J

A. Hjorth Larsen, J. Jørgen Mortensen, J. Blomqvist, I. E. Castelli, R. Christensen, M. Du lak, J. Friis, M. N. Groves, B. Hammer, C. Hargus, E. D. Hermes, P. C. Jennings, P. Bjerre Jensen, J. Kermode, J. R. Kitchin, E. Leonhard Kolsbjerg, J. Kubal, K. Kaasb- jerg, S. Lysgaard, J. Bergmann Maronsson, T. Max- son, T. Olsen, L. Pastewka, A. Peterson, C. Ros...

work page 2017
[73]

M Ganose, A

A. M Ganose, A. J Jackson, and D. O Scanlon, J. Open Source Softw.3, 717 (2018). 1 SUPPOR TING INFORMA TION Raman spectroscopy Figure S1 presents the Raman spectra acquired from three regions: PdSe2 on hBN, the 1L region, and the HS region. Low-frequency Raman spectroscopy (0–100 cm−1) is a widely used, non-destructive probe of interlayer vibrational mode...

work page 2018