pith. sign in

arxiv: 2605.20869 · v1 · pith:LHV2ECRWnew · submitted 2026-05-20 · ❄️ cond-mat.mes-hall

The Topography Trap: Sifting Interlayer Excitons from Strain-Related Artifacts in Real-World 2D Hetrostructures

Pith reviewed 2026-05-21 02:30 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords interlayer excitonsTMDC heterostructuresphotoluminescencestrain artifactstopographical inhomogeneitiesMoS2-WSe2van der Waals materialstip-enhanced photoluminescence
0
0 comments X

The pith

Spectroscopic features once assigned to a momentum-indirect ΓK interlayer exciton in MoS2-WSe2 heterostructures instead come from locally strained WSe2 at interface topographical inhomogeneities.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper introduces a decision-tree protocol that checks for intralayer exciton quenching and matches photoluminescence maps to atomic force microscopy topography to separate genuine interlayer excitons from artifacts. When applied to MoS2-MoSe2 and MoS2-WSe2 stacks, the protocol confirms room-temperature momentum-direct KK interlayer excitons. In MoS2-WSe2 the same protocol finds no support for the widely reported bright, twist-angle-independent ΓK interlayer exciton. Infrared and tip-enhanced photoluminescence measurements with sub-diffraction resolution instead tie the disputed signals to strained WSe2 regions sitting above interface height variations. The result supplies a practical, spatially resolved method for assigning optical features in real TMDC heterostructures.

Core claim

The central claim is that the spectroscopic features previously assigned to the momentum-indirect ΓK-IX in MoS2-WSe2 originate from locally strained WSe2 at topographical inhomogeneities of the heterostructure interface, as demonstrated by comprehensive infrared and tip-enhanced photoluminescence data with sub-diffraction-limited resolution, while a decision-tree protocol that evaluates interlayer coupling via intralayer exciton quenching and correlates photoluminescence with AFM topography correctly identifies the KK-IX in multiple heterostructures at room temperature.

What carries the argument

A decision-tree protocol that evaluates interlayer coupling via intralayer exciton quenching and correlates photoluminescence signals with atomic force microscopy topography maps to assign room-temperature features.

If this is right

  • Real-world TMDC heterostructures require spatially resolved characterization to separate true interlayer excitons from strain-induced signals.
  • Momentum-direct KK interlayer excitons can be identified at room temperature in MoS2-based stacks using the quenching-plus-AFM protocol.
  • Earlier assignments of twist-angle-independent ΓK interlayer excitons in MoS2-WSe2 should be reexamined for possible contributions from interface topography.
  • A generally applicable framework now exists for reliable identification of interlayer excitons in 2D semiconductor heterostructures.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The protocol may help reclassify other reported momentum-indirect excitons in twisted or misaligned TMDC stacks where interface topography varies.
  • Controlled experiments that deliberately introduce or remove local strain without changing the heterostructure could test whether the disputed photoluminescence features can be reproduced independently.
  • Interface flatness may prove more decisive for optical spectra in van der Waals stacks than twist angle alone in many practical samples.

Load-bearing premise

The assumption that the observed correlation between photoluminescence features and AFM-detected topographical inhomogeneities combined with intralayer exciton quenching is sufficient to rule out the ΓK interlayer exciton rather than reflecting sample-specific limitations.

What would settle it

Detection of the reported bright ΓK photoluminescence features in flat, topographically uniform regions of MoS2-WSe2 heterostructures that also lack local strain signatures in high-resolution maps.

Figures

Figures reproduced from arXiv: 2605.20869 by Adri\'an Dewambrechies Fern\'andez, \'Alvaro Rodr\'iguez, Arijit Kayal, Astrid Weston, Kirill I. Bolotin, Luka Pirker, Otakar Frank, Pablo Hern\'andez L\'opez, Rafael Nadas, Roman Gorbachev, Sebastian Heeg.

Figure 1
Figure 1. Figure 1: FIG. 1 [PITH_FULL_IMAGE:figures/full_fig_p004_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: FIG. 2 [PITH_FULL_IMAGE:figures/full_fig_p010_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: f, the energy range of these strain-induced PL features almost perfectly matches the energy range reported for the absent ΓK-IX in the literature. 13 [PITH_FULL_IMAGE:figures/full_fig_p013_3.png] view at source ↗
read the original abstract

Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to their long radiative lifetimes and tunability by electric fields, strain, and twist angle. However, many ambiguities persist in the optical identification and manipulation of IXs, highlighting the need for reliable spectroscopic criteria that distinguish interlayer species from spurious signals. Here, we present a decision-tree protocol that evaluates interlayer coupling via intralayer exciton quenching and correlates photoluminescence (PL) with atomic force microscopy (AFM) to correctly assign room-temperature PL features in TMDC-based heterostructures. Applying this protocol, we identify momentum-direct IX between the K valleys of the two layers (KK-IX) in MoS2-MoSe2 and MoS2-WSe2 heterostructures at room temperature. In contrast, our protocol contests the reported bright, momentum-indirect, twist-angle-independent $\Gamma$K-IX in MoS2-WSe2. Comprehensive experimental data, including infrared and tip-enhanced photoluminescence (TEPL) with sub-diffraction-limited resolution, show no compelling evidence for this excitonic species, despite numerous reports. Instead, the spectroscopic features previously assigned to this $\Gamma$K-IX originate from locally strained WSe2 at topographical inhomogeneities of the heterostructure interface, underscoring the need for robust, spatially resolved characterization of real-world samples in this highly accessible field and providing a generally applicable framework for identifying interlayer excitons in 2D semiconductor heterostructures.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The paper claims to introduce a decision-tree protocol that uses intralayer exciton quenching correlated with AFM topography to distinguish genuine interlayer excitons (IXs) from strain artifacts in TMDC heterostructures. It affirms room-temperature KK-IX in MoS2-MoSe2 and MoS2-WSe2 but contests prior reports of bright, twist-angle-independent ΓK-IX in MoS2-WSe2, attributing those PL features instead to locally strained WSe2 at interface inhomogeneities on the basis of infrared PL and sub-diffraction TEPL mapping.

Significance. If the central distinction holds, the work supplies a practical, spatially resolved framework that could reduce misidentification of IXs in accessible 2D heterostructures. The explicit use of TEPL with sub-diffraction resolution and the correlation of PL with AFM-detected topography constitute concrete methodological strengths that address a recurring experimental ambiguity in the field.

major comments (2)
  1. [Decision-tree protocol] The decision-tree protocol (described in the abstract and results) treats complete intralayer exciton quenching as sufficient to exclude any ΓK-IX contribution, yet does not quantify residual PL intensity or provide an upper bound on a possible weak, co-located ΓK-IX component at the same strained sites.
  2. [TEPL and ΓK-IX contestation] TEPL maps confirm spatial overlap between the contested PL features and AFM inhomogeneities, but the analysis lacks an orthogonal observable (e.g., g-factor, magnetic-field dependence, or distinct temperature scaling) that would separate strained intralayer WSe2 emission from a potential momentum-indirect ΓK-IX at identical locations.
minor comments (2)
  1. [Title] Title spelling: 'Hetrostructures' should read 'Heterostructures'.
  2. [Abstract and figures] The abstract refers to 'comprehensive experimental data' and 'no compelling evidence'; inclusion of sample statistics, number of measured regions, and error analysis in the main figures would strengthen the claim that the features are exclusively strain-related.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the thorough review and constructive feedback on our manuscript. We address each major comment in detail below, providing clarifications and indicating revisions where the manuscript will be strengthened in the next version.

read point-by-point responses
  1. Referee: [Decision-tree protocol] The decision-tree protocol (described in the abstract and results) treats complete intralayer exciton quenching as sufficient to exclude any ΓK-IX contribution, yet does not quantify residual PL intensity or provide an upper bound on a possible weak, co-located ΓK-IX component at the same strained sites.

    Authors: We agree that an explicit quantification of residual PL intensity would strengthen the protocol by providing a concrete upper bound. In the revised manuscript we will add a quantitative analysis of the residual intralayer exciton intensity at quenched sites, deriving an upper limit on any co-located weak ΓK-IX contribution consistent with the observed signal-to-noise ratio. This addition directly addresses the concern while preserving the core logic of the decision tree. revision: yes

  2. Referee: [TEPL and ΓK-IX contestation] TEPL maps confirm spatial overlap between the contested PL features and AFM inhomogeneities, but the analysis lacks an orthogonal observable (e.g., g-factor, magnetic-field dependence, or distinct temperature scaling) that would separate strained intralayer WSe2 emission from a potential momentum-indirect ΓK-IX at identical locations.

    Authors: We acknowledge that orthogonal observables such as magnetic-field dependence could offer additional discrimination. However, the decision-tree protocol is deliberately constructed around observables that are accessible in standard laboratory settings: intralayer quenching correlated with AFM topography and sub-diffraction TEPL mapping. The TEPL data show that the contested emission is localized precisely at topographic inhomogeneities on a scale much smaller than the diffraction limit, which is inconsistent with a momentum-indirect ΓK-IX that would be expected to exhibit more uniform spatial distribution and twist-angle dependence. We have added a paragraph in the revised manuscript discussing why these spatially resolved signatures, together with the absence of the expected twist-angle tunability, suffice to contest prior ΓK-IX assignments, while noting that future magneto-optical studies could provide further orthogonal confirmation. revision: partial

Circularity Check

0 steps flagged

No significant circularity; experimental protocol is self-contained

full rationale

The paper advances a decision-tree protocol grounded in direct experimental observables: intralayer exciton quenching correlated with AFM-detected topographical inhomogeneities, plus sub-diffraction TEPL and infrared PL maps. These measurements are used to assign KK-IX features and to attribute previously reported ΓK-IX signals to locally strained WSe2. No equations, fitted parameters, or derivations are presented whose outputs reduce to the inputs by construction. The analysis relies on spatially resolved data rather than self-citations, ansatzes, or uniqueness theorems imported from prior work by the same authors. The claims therefore remain independent of the protocol's own outputs and are falsifiable against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

Claims rest on standard spectroscopic assignments in TMDC literature and the assumption that AFM-PL spatial correlation uniquely identifies strain origins.

axioms (2)
  • domain assumption Intralayer exciton quenching indicates interlayer coupling in TMDC heterostructures
    Invoked to evaluate interlayer coupling in the decision-tree protocol.
  • domain assumption Photoluminescence features at specific energies can be assigned to strain or excitons based on spatial correlation with topography
    Central to reassigning features from ΓK-IX to strained WSe2.

pith-pipeline@v0.9.0 · 5889 in / 1384 out tokens · 41986 ms · 2026-05-21T02:30:35.366695+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

70 extracted references · 70 canonical work pages

  1. [1]

    topography trap

    In contrast, the absence of quenching of intralayer excitons represents strong evidence of poor interlayer coupling, therefore questioning any further assignments to interlayer species. After establishing that quenched intralayer emission confirms interlayer coupling, we proceed in Figure 1 with step 2 of the protocol, which requires looking for additiona...

  2. [2]

    Physical Review B105, 035417 (2022)

    Sigl, L.et al.Optical dipole orientation of interlayer excitons in MoSe2-WSe2 heterostacks. Physical Review B105, 035417 (2022)

  3. [3]

    A.et al.Electrical control of interlayer exciton dynamics in atomically thin heterostructures.Science366, 870–875 (2019)

    Jauregui, L. A.et al.Electrical control of interlayer exciton dynamics in atomically thin heterostructures.Science366, 870–875 (2019)

  4. [4]

    Miller, B.et al.Long-lived direct and indirect interlayer excitons in Van der Waals heterostruc- tures.Nano Letters17, 5229–5237 (2017)

  5. [5]

    R.-P.et al.Confinement of long-lived interlayer excitons in WS2/WSe2 heterostructures.Communications Physics4(2021)

    Montblanch, A. R.-P.et al.Confinement of long-lived interlayer excitons in WS2/WSe2 heterostructures.Communications Physics4(2021)

  6. [6]

    & Pan, A

    Jiang, Y., Chen, S., Zheng, W., Zheng, B. & Pan, A. Interlayer exciton formation, relaxation, and transport in tmd Van der Waals heterostructures.Light: Science & Applications10(2021)

  7. [7]

    Zhang, D.et al.Enhancing layer-engineered interlayer exciton emission and valley polarization in Van der Waals heterostructures via strain.ACS Nano18, 17672–17680 (2024)

  8. [8]

    K.et al.Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 Van der Waals heterostructures.ACS Nano11, 4041–4050 (2017)

    Nayak, P. K.et al.Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 Van der Waals heterostructures.ACS Nano11, 4041–4050 (2017)

  9. [9]

    Mak, K. F. & Shan, J. Opportunities and challenges of interlayer exciton control and manipu- lation.Nature Nanotechnology13, 974–976 (2018)

  10. [10]

    Holler, J.et al.Interlayer exciton valley polarization dynamics in large magnetic fields.Physical Review B105, 085303 (2022)

  11. [11]

    Wang, Z.et al.Evidence of high-temperature exciton condensation in two-dimensional atomic double layers.Nature574, 76–80 (2019)

  12. [12]

    Tang, Y.et al.Simulation of hubbard model physics in WSe2/WS2 moiré superlattices.Nature 579, 353–358 (2020)

  13. [13]

    Xu, F.et al.Observation of integer and fractional quantum anomalous hall effects in twisted bilayer MoTe2.Physical Review X13, 031037 (2023)

  14. [14]

    Ciarrocchi, A.et al.Polarization switching and electrical control of interlayer excitons in two-dimensional Van der Waals heterostructures.Nature Photonics13, 131–136 (2018). 17

  15. [15]

    Science351, 688–691 (2016)

    Rivera, P.et al.Valley-polarized exciton dynamics in a 2D semiconductor heterostructure. Science351, 688–691 (2016)

  16. [16]

    Ye, T.et al.Nonvolatile electrical switching of optical and valleytronic properties of interlayer excitons.Light: Science & Applications11(2022)

  17. [17]

    Nature Nanotechnology13, 1004–1015 (2018)

    Rivera, P.et al.Interlayer valley excitons in heterobilayers of transition metal dichalcogenides. Nature Nanotechnology13, 1004–1015 (2018)

  18. [18]

    M.et al.Nature of long-lived moiré interlayer excitons in electrically tunable MoS2/MoSe2 heterobilayers.Nano Letters24, 11232–11238 (2024)

    Alexeev, E. M.et al.Nature of long-lived moiré interlayer excitons in electrically tunable MoS2/MoSe2 heterobilayers.Nano Letters24, 11232–11238 (2024)

  19. [19]

    S.et al.Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2.Nanoscale14, 5758–5768 (2022)

    Covre, F. S.et al.Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2.Nanoscale14, 5758–5768 (2022)

  20. [20]

    Tilmann, R.et al.Identification of ubiquitously present polymeric adlayers on 2D transition metal dichalcogenides.ACS Nano17, 10617–10627 (2023)

  21. [21]

    Wang, W.et al.Clean assembly of Van der Waals heterostructures using silicon nitride membranes.Nature Electronics6, 981–990 (2023)

  22. [22]

    Rivera, P.et al.Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures.Nature Communications6(2015)

  23. [23]

    T.et al.Double indirect interlayer exciton in a MoSe2/WSe2 Van der Waals heterostructure.ACS Nano12, 4719–4726 (2018)

    Hanbicki, A. T.et al.Double indirect interlayer exciton in a MoSe2/WSe2 Van der Waals heterostructure.ACS Nano12, 4719–4726 (2018)

  24. [24]

    Jin, C.et al.Observation of moiré excitons in WSe2/WS2 heterostructure superlattices.Nature 567, 76–80 (2019)

  25. [25]

    National Science Review9(2021)

    Wu, K.et al.Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers. National Science Review9(2021)

  26. [26]

    M.et al.Resonantly hybridized excitons in moiré superlattices in Van der Waals heterostructures.Nature567, 81–86 (2019)

    Alexeev, E. M.et al.Resonantly hybridized excitons in moiré superlattices in Van der Waals heterostructures.Nature567, 81–86 (2019)

  27. [27]

    Guo, J.et al.Moiré-controllable exciton localization and dynamics through spatially-modulated inter- and intralayer excitons in a MoSe2/WS2 heterobilayer.Nature Communications16 (2025)

  28. [28]

    Kunstmann, J.et al.Momentum-space indirect interlayer excitons in transition-metal dichalco- genide Van der Waals heterostructures.Nature Physics14, 801–805 (2018)

  29. [29]

    & Frank, O

    Rodriguez, A., Kalbáč, M. & Frank, O. Strong localization effects in the photoluminescence of transition metal dichalcogenide heterobilayers.2D Materials8, 025028 (2021). 18

  30. [30]

    & Frank, O

    Rodríguez, Á., Varillas, J., Haider, G., Kalbac, M. & Frank, O. Complex strain scapes in reconstructed transition-metal dichalcogenide moiré superlattices.ACS nano17, 7787–7796 (2023)

  31. [31]

    Nanoscale9, 6674–6679 (2017)

    Mouri, S.et al.Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers. Nanoscale9, 6674–6679 (2017)

  32. [32]

    Karni, O.et al.Infrared interlayer exciton emission in MoS2/WSe2 heterostructures.Physical Review Letters123, 247402 (2019)

  33. [33]

    Tan, Q.et al.Layer-engineered interlayer excitons.Science Advances7(2021)

  34. [34]

    Fang, H.et al.Strong interlayer coupling in Van der Waals heterostructures built from single-layer chalcogenides.Proceedings of the National Academy of Sciences111, 6198–6202 (2014)

  35. [35]

    Gong, Y.et al.Vertical and in-plane heterostructures from WS2/MoS2 monolayers.Nature Materials13, 1135–1142 (2014)

  36. [36]

    Okada, M.et al.Direct and indirect interlayer excitons in a Van der Waals heterostructure of hBN/WS2/MoS2/hBN.ACS Nano12, 2498–2505 (2018)

  37. [37]

    Schottle, N.et al.Photophysics of direct and indirect interlayer excitons in MoS2/WS2 moiré superlattices.ACS Photonics12, 4670–4677 (2025)

  38. [38]

    Zhang, L.et al.Twist-angle dependence of moiré excitons in WS2/MoSe2 heterobilayers.Nature Communications11(2020)

  39. [39]

    Jin, C.et al.Identification of spin, valley and moiré quasi-angular momentum of interlayer excitons.Nature Physics15, 1140–1144 (2019)

  40. [40]

    Chen, J.et al.Twist-angle-dependent momentum-space direct and indirect interlayer excitons in WSe2/WS2 heterostructure.RSC Advances13, 18099–18107 (2023)

  41. [41]

    Tran, K.et al.Evidence for moiré excitons in Van der Waals heterostructures.Nature567, 71–75 (2019)

  42. [42]

    Nano Letters18, 1751–1757 (2018)

    Niehues, I.et al.Strain control of exciton–phonon coupling in atomically thin semiconductors. Nano Letters18, 1751–1757 (2018)

  43. [43]

    P.et al.Facile and quantitative estimation of strain in nanobubbles with arbitrary symmetry in 2D semiconductors verified using hyperspectral nano-optical imaging

    Darlington, T. P.et al.Facile and quantitative estimation of strain in nanobubbles with arbitrary symmetry in 2D semiconductors verified using hyperspectral nano-optical imaging. The Journal of Chemical Physics153(2020). 19

  44. [44]

    Gastaldo, M.et al.Tunable strain and bandgap in subcritical-sized mos2 nanobubbles.npj 2D Materials and Applications7(2023)

  45. [45]

    L.et al.Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers

    Seyler, K. L.et al.Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers. Nature567, 66–70 (2019)

  46. [46]

    Science Advances5(2019)

    Liu, Y.et al.Room temperature nanocavity laser with interlayer excitons in 2D heterostructures. Science Advances5(2019)

  47. [47]

    Nano Letters24, 8795–8800 (2024)

    Chen, D.et al.Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer. Nano Letters24, 8795–8800 (2024)

  48. [48]

    & Gao, W.-b

    Tan, Q., Rasmita, A., Zhang, Z., Novoselov, K. & Gao, W.-b. Signature of cascade transitions between interlayer excitons in a moiré superlattice.Physical Review Letters129, 247401 (2022)

  49. [49]

    Tan, Q.et al.Layer-dependent correlated phases in WSe2/MoS2 moiré superlattice.Nature Materials22, 605–611 (2023)

  50. [50]

    Nano Letters23, 11006–11012 (2023)

    Zhao, H.et al.Manipulating interlayer excitons for near-infrared quantum light generation. Nano Letters23, 11006–11012 (2023)

  51. [51]

    Nature603, 247–252 (2022)

    Karni, O.et al.Structure of the moiré exciton captured by imaging its electron and hole. Nature603, 247–252 (2022)

  52. [52]

    Schmitt, D.et al.Formation of moiré interlayer excitons in space and time.Nature608, 499–503 (2022)

  53. [53]

    Chiu, M.-H.et al.Spectroscopic signatures for interlayer coupling in MoS2–WSe2 Van der Waals stacking.ACS Nano8, 9649–9656 (2014)

  54. [54]

    Zhang, C.et al.Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures.2D Materials4, 015026 (2016)

  55. [55]

    Zhang, C.et al.Interlayer couplings, moiré patterns, and 2D electronic superlattices in MoS2/WSe2 heterobilayers.Science Advances3(2017)

  56. [56]

    & Morpurgo, A

    Ponomarev, E., Ubrig, N., Gutiérrez-Lezama, I., Berger, H. & Morpurgo, A. F. Semiconducting Van der Waals interfaces as artificial semiconductors.Nano Letters18, 5146–5152 (2018)

  57. [57]

    T., Olsen, T

    Latini, S., Winther, K. T., Olsen, T. & Thygesen, K. S. Interlayer excitons and band alignment in MoS2/hBN/WSe2 Van der Waals heterostructures.Nano Letters17, 938–945 (2017)

  58. [58]

    Unuchek, D.et al.Room-temperature electrical control of exciton flux in a Van der Waals heterostructure.Nature560, 340–344 (2018). 20

  59. [59]

    Nagler, P.et al.Interlayer excitons in transition-metal dichalcogenide heterobilayers.physica status solidi (b)256(2019)

  60. [60]

    Cho, C.et al.Highly strain-tunable interlayer excitons in MoS2/WSe2 heterobilayers.Nano Letters21, 3956–3964 (2021)

  61. [61]

    Applied Physics Letters120(2022)

    Ren, L.et al.Efficient modulation of MoS2/WSe2 interlayer excitons via uniaxial strain. Applied Physics Letters120(2022)

  62. [62]

    Khestanova, E.et al.Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping.ACS Photonics(2023)

  63. [63]

    Imaeda, K.et al.Plasmon-enhanced photoluminescence of interlayer excitons induced on WSe2/MoS2 heterobilayers.The Journal of Physical Chemistry Letters17, 1670–1676 (2026)

  64. [64]

    M.et al.Strain fingerprinting of exciton valley character in 2D semiconductors

    Kumar, A. M.et al.Strain fingerprinting of exciton valley character in 2D semiconductors. Nature Communications15, 7546 (2024)

  65. [65]

    R.et al.Twist angle-dependent atomic reconstruction and moiré patterns in transition metal dichalcogenide heterostructures.ACS Nano14, 4550–4558 (2020)

    Rosenberger, M. R.et al.Twist angle-dependent atomic reconstruction and moiré patterns in transition metal dichalcogenide heterostructures.ACS Nano14, 4550–4558 (2020)

  66. [66]

    Khestanova, E., Guinea, F., Fumagalli, L., Geim, A. K. & Grigorieva, I. V. Universal shape and pressure inside bubbles appearing in Van der Waals heterostructures.Nature Communications 7(2016)

  67. [67]

    Nature Nanotechnology15, 592–597 (2020)

    Weston, A.et al.Atomic reconstruction in twisted bilayers of transition metal dichalcogenides. Nature Nanotechnology15, 592–597 (2020)

  68. [68]

    Hernández López, P.et al.Strain control of hybridization between dark and localized excitons in a 2D semiconductor.Nature Communications13(2022)

  69. [69]

    E.et al.Ultrafast charge-transfer dynamics in twisted MoS2/WSe2 het- erostructures.ACS Nano15, 14725–14731 (2021)

    Zimmermann, J. E.et al.Ultrafast charge-transfer dynamics in twisted MoS2/WSe2 het- erostructures.ACS Nano15, 14725–14731 (2021)

  70. [70]

    You, W.et al.Strong interfacial coupling in vertical WSe2/WS2 heterostructure for high performance photodetection.Applied Physics Letters120(2022). 21