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arxiv: 2606.02298 · v1 · pith:ZWJBPK5Anew · submitted 2026-06-01 · ❄️ cond-mat.mtrl-sci

Room-Temperature Electric-Field Control of Anomalous Hall Effect in Py/BTO/LSMO Heterostructures

Kusampal Yadav (1) , Kousik Das (1) , Aditya Raj (2) , Mainak Ghosh (2) , Abhishek Kumar (3) , Kartick Biswas (3) , Kalyan Sarkar (1) , Pavan Nukala (3)
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Sayantika Bhowal (2) Devajyoti Mukherjee (1) ((1) School of Physical Sciences Indian Association for the Cultivation of Science (2) Department of Physics Indian Institute of Technology Bombay (3) Centre for Nanoscience Engineering Indian Institute of Science Bengaluru)
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Pith reviewed 2026-06-28 13:37 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords anomalous Hall effectferroelectric controlheterostructuresRashba spin splittingspintronic devicesroom temperatureelectric field tuningthin film magnetism
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The pith

Electric fields modulate anomalous Hall resistivity by up to 93 percent at room temperature using voltages of 0.5 V and 2 V in Py/BTO/LSMO heterostructures.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows that applying an electric field across the ferroelectric BaTiO3 layer in these epitaxial stacks produces large, reversible changes in the measured Hall resistivity at room temperature. Substrate strain sets up different magnetic anisotropies that let the voltage switch between ordinary anomalous Hall and topological Hall signals. Density functional theory calculations trace the effect to polarization-driven Rashba spin splitting at the interfaces, directly connecting the ferroelectric order to the transport response. If the link holds, the structures could serve as low-voltage platforms for controlling spin-dependent transport without continuous current.

Core claim

Epitaxial Py/BTO/LSMO heterostructures exhibit robust room-temperature electric-field control of the anomalous Hall effect. Hall resistivity shows giant tunability of nearly 93 percent at operating voltages of only 0.5 V and 2 V. Substrate-induced strain generates distinct magnetic anisotropies that enable voltage-driven tuning between anomalous and topological Hall contributions. Robust ferroelectric polarization in BTO couples strongly to interfacial orbital reconstruction and carrier redistribution. Density functional theory calculations reveal polarization-controlled Rashba spin splitting that establishes a direct link between ferroelectric order and emergent quantum transport.

What carries the argument

Ferroelectric polarization in BTO that couples to interfacial orbital reconstruction and carrier redistribution, producing polarization-controlled Rashba spin splitting that modulates the Hall resistivity.

Load-bearing premise

The observed changes in Hall resistivity arise primarily from ferroelectric polarization in BTO rather than from substrate strain artifacts, interface defects, or measurement geometry.

What would settle it

If reversing the BTO polarization direction produces no corresponding reversal or modulation in Hall resistivity, or if the effect vanishes when BTO is replaced by a non-ferroelectric dielectric of similar thickness, the central claim is falsified.

read the original abstract

We demonstrate room temperature electric field control of the anomalous Hall effect in epitaxial Ni80Fe20 (Py) BaTiO3 (BTO) La0.7Sr0.3MnO3 (LSMO) thin film heterostructures grown on MgO and LaAlO3 substrates. Substrate induced strain states generate distinct magnetic anisotropies, enabling voltage driven tuning between anomalous and topological Hall contributions. Robust ferroelectric polarization in BTO, confirmed by piezoresponse force microscopy, couples strongly to interfacial orbital reconstruction and carrier redistribution. As a result, Hall resistivity exhibits giant low voltage tunability, with up to nearly 93 percent modulation at operating voltages of only 0.5 tand 2 V. Density functional theory calculations further reveal polarization controlled Rashba spin splitting, establishing a direct link between ferroelectric order and emergent quantum transport. These findings establish Py/BTO/LSMO heterostructures as promising candidates for low-power multifunctional spintronic devices, where substrate engineering enables control over emergent quantum transport phenomena.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript demonstrates room-temperature electric-field control of the anomalous Hall effect in epitaxial Py/BTO/LSMO heterostructures on MgO and LaAlO3 substrates. Substrate-induced strain generates distinct magnetic anisotropies that enable voltage-driven tuning between anomalous and topological Hall contributions. Robust BTO ferroelectric polarization, confirmed by piezoresponse force microscopy, is reported to couple to interfacial orbital reconstruction and carrier redistribution, yielding up to 93% modulation of Hall resistivity at low voltages (0.5 V and 2 V). Density functional theory calculations are used to link this to polarization-controlled Rashba spin splitting, positioning the heterostructures as candidates for low-power spintronic devices.

Significance. If the central experimental claim holds after addressing mechanism separation, the work would be significant for room-temperature spintronics by establishing a direct experimental and computational link between ferroelectric order and tunable quantum transport. The integration of strain engineering with polarization control offers a concrete route to multifunctional devices, and the low-voltage operation strengthens practical relevance.

major comments (2)
  1. [Results section on voltage-dependent Hall resistivity] Results section on voltage-dependent Hall resistivity: the 93% modulation is attributed to BTO polarization coupling to interfacial effects and Rashba splitting, yet the text does not isolate this from voltage-induced strain (electrostriction/piezoelectric) that can simultaneously alter magnetic anisotropy. The abstract already notes substrate strain enabling tuning between Hall contributions; without a control experiment (e.g., non-ferroelectric dielectric spacer) or direct overlay of Hall loops onto PFM/P-E hysteresis, the polarization-specific mechanism remains unseparated and load-bearing for the central claim.
  2. [DFT calculations section] DFT calculations section: the reported polarization-controlled Rashba spin splitting models only the ferroelectric polarization state as the variable. Because the experimental voltage application can change both polarization and strain, the DFT does not address the possible strain contribution to the observed Hall modulation and therefore does not establish the claimed direct link.
minor comments (1)
  1. [Abstract] Typographical error in the abstract: '0.5 tand 2 V' should be '0.5 and 2 V'.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive comments highlighting the need to better separate ferroelectric polarization effects from possible voltage-induced strain contributions. We address each major comment below and indicate planned revisions.

read point-by-point responses

  1. Referee: [Results section on voltage-dependent Hall resistivity] Results section on voltage-dependent Hall resistivity: the 93% modulation is attributed to BTO polarization coupling to interfacial effects and Rashba splitting, yet the text does not isolate this from voltage-induced strain (electrostriction/piezoelectric) that can simultaneously alter magnetic anisotropy. The abstract already notes substrate strain enabling tuning between Hall contributions; without a control experiment (e.g., non-ferroelectric dielectric spacer) or direct overlay of Hall loops onto PFM/P-E hysteresis, the polarization-specific mechanism remains unseparated and load-bearing for the central claim.

    Authors: We agree that isolating the polarization-specific mechanism from voltage-induced strain is essential for the central claim. The manuscript establishes ferroelectricity via PFM and reports modulation at low voltages (0.5 V, 2 V) where electrostrictive strain is expected to be limited; the voltage dependence exhibits hysteretic behavior consistent with ferroelectric switching. However, we acknowledge the lack of a non-ferroelectric control sample or explicit Hall-PFM overlay in the current data. We will revise the Results section to add a dedicated paragraph estimating strain contributions (based on known piezoelectric coefficients and low-voltage regime) and to reference the correlation between Hall modulation and PFM hysteresis loops. This constitutes a partial revision focused on textual clarification and analysis rather than new experiments. revision: partial

  2. Referee: [DFT calculations section] DFT calculations section: the reported polarization-controlled Rashba spin splitting models only the ferroelectric polarization state as the variable. Because the experimental voltage application can change both polarization and strain, the DFT does not address the possible strain contribution to the observed Hall modulation and therefore does not establish the claimed direct link.

    Authors: The DFT calculations intentionally vary only the ferroelectric polarization while holding the atomic structure fixed to isolate its effect on Rashba spin splitting and interfacial orbital reconstruction. This provides computational support for a polarization-driven contribution. We recognize that the model does not incorporate voltage-induced strain variations present in experiment. We will revise the DFT section to explicitly state this modeling assumption and limitation, and to discuss how the polarization-only result complements the experimental low-voltage data in supporting the claimed mechanism. revision: yes

Circularity Check

0 steps flagged

No significant circularity; experimental and DFT claims are independent of self-referential inputs

full rationale

The manuscript reports experimental measurements of voltage-tunable Hall resistivity in Py/BTO/LSMO heterostructures, supported by PFM confirmation of ferroelectricity and standard DFT calculations showing polarization-dependent Rashba splitting. No equations, parameter fits presented as predictions, self-citation load-bearing uniqueness theorems, or ansatzes smuggled via prior work appear in the provided text. The central claims rest on direct observation and first-principles computation without reduction to the paper's own fitted quantities or self-referential definitions, making the derivation chain self-contained against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

The abstract contains no mathematical derivations, fitted constants, or new postulated entities; the work is an experimental demonstration supported by standard DFT calculations.

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Reference graph

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