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arxiv: 2606.24227 · v1 · pith:3PQRLZFXnew · submitted 2026-06-23 · ❄️ cond-mat.mtrl-sci

Nonradiative Multiphonon Model of Deep-Level Transient Spectroscopy: Beyond Henry-Lang Model

Menglin Huang , Shanshan Wang , Junjie Zhou , Xinjing Guo , Shiyou Chen This is my paper

Pith reviewed 2026-06-25 23:20 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords nonradiative multiphonondeep-level transient spectroscopyHenry-Lang modelcarrier capture cross sectionsemiconductor defectslattice relaxationtemperature dependenceGa2O3
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The pith

The Henry-Lang model for DLTS produces carrier capture cross sections that differ by up to six orders of magnitude from a rigorous nonradiative multiphonon calculation at room temperature.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper develops a rigorous nonradiative multiphonon model to replace the Henry-Lang approach used in deep-level transient spectroscopy analysis. It demonstrates that the Henry-Lang model holds only under the Condon approximation plus high-temperature and strong-coupling limits, which produce wrong temperature dependence for emission and capture. The new model shows that temperature dependence arises mainly from effective phonons that combine large wavefunction overlap with high thermal occupation and are tightly linked to lattice relaxation. Direct comparison on 21 defects across 12 semiconductors reveals that existing models can err by factors of a million when fitting measured emission rates.

Core claim

The Henry-Lang model is valid only under the Condon approximation as well as high-temperature and strong electron-phonon coupling approximations. In the rigorous NMP treatment the temperature dependence is governed by effective phonons that possess both large phonon wavefunction overlap and high thermal occupation; these phonons are strongly correlated with lattice relaxation. Neglect of the correlation causes existing DLTS models to introduce substantial errors when fitting emission rates, with the Henry-Lang model yielding completely different temperature dependence of the capture cross section and discrepancies reaching six orders of magnitude at room temperature for defects in Si, SiC an

What carries the argument

The rigorous nonradiative multiphonon (NMP) model that tracks effective phonons with large wavefunction overlap and their correlation to lattice relaxation.

If this is right

  • DLTS-derived capture cross sections and activation energies for defects in Si, SiC and Ga2O3 must be re-extracted with the NMP model to remove systematic errors of several orders of magnitude.
  • Emission-rate fitting routines used in commercial DLTS software require replacement by the full multiphonon expression that retains phonon-lattice relaxation correlation.
  • Device simulations that rely on previously published DLTS parameters for carrier trapping will need updated values once the NMP model is applied.
  • The effective-phonon picture supplies a practical route to compute temperature-dependent rates without enumerating the entire phonon spectrum.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Power-electronics device modeling that uses DLTS data for lifetime prediction will change quantitatively once the corrected capture rates are adopted.
  • Future DLTS experiments may need denser temperature sampling to resolve the non-Arrhenius behavior predicted by the NMP model.
  • The same phonon-correlation issue likely appears in other multiphonon spectroscopies such as photoluminescence or thermally stimulated current measurements.

Load-bearing premise

Temperature dependence of capture and emission is controlled mainly by a small set of effective phonons that simultaneously have large wavefunction overlap and high thermal occupation.

What would settle it

Direct measurement of the temperature dependence of the capture cross section for a well-characterized defect such as the EL2 level in GaAs, followed by comparison of the experimental curve against both the Henry-Lang prediction and the full NMP calculation.

read the original abstract

Deep-level transient spectroscopy (DLTS) is a key experimental method for defect characterization, yet its analysis remains controversial, and the two widely used models developed by Henry and Lang are conflicting. We show that the Henry-Lang model is valid only under the Condon approximation, as well as high-temperature and strong electron-phonon coupling approximations, which cause incorrect temperature dependence of carrier emission and capture. Here we develop a rigorous nonradiative multiphonon (NMP) model, and demonstrate that the temperature dependence is governed predominantly by effective phonons with large phonon wavefunction overlap and high thermal occupation. The effective phonons are strongly correlated with lattice relaxation.The neglect of this correlation in existing DLTS models introduces substantial errors when they are used to fit DLTS-measured emission rates. Our comparison for 21 different defects in 12 semiconductors, including Si, SiC and Ga$_2$O$_3$, shows that the Henry-Lang model gives a completely different temperature dependence of carrier capture cross section from that obtained using the rigorous NMP model, with errors reaching up to six orders of magnitude at room temperature. Our study highlights the necessity of revisiting previous DLTS analysis studies using the rigorous NMP model.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The manuscript develops a rigorous nonradiative multiphonon (NMP) model for deep-level transient spectroscopy (DLTS), claiming that the Henry-Lang model holds only under the Condon approximation plus high-temperature and strong electron-phonon coupling limits. These approximations produce incorrect temperature dependence for carrier emission and capture rates. The NMP treatment shows that temperature dependence is controlled by effective phonons having large wavefunction overlap and high thermal occupation; these phonons are strongly correlated with lattice relaxation. A comparison across 21 defects in 12 semiconductors (Si, SiC, Ga2O3 and others) finds that the Henry-Lang model yields capture-cross-section temperature dependences differing by up to six orders of magnitude at room temperature from the NMP results.

Significance. If substantiated, the result would require re-examination of a large body of DLTS-derived defect parameters in technologically important semiconductors. The breadth of the comparison (21 defects, 12 materials) is a positive feature that would strengthen the claim if the underlying derivations and parameter choices can be verified.

major comments (2)
  1. [Abstract] Abstract: the central quantitative claim (errors up to six orders of magnitude at room temperature for 21 defects) is load-bearing for the recommendation to revisit prior DLTS studies, yet the provided text supplies neither the explicit NMP rate expressions, the procedure for selecting the effective phonons, nor the tabulated capture-cross-section values, preventing verification that the discrepancy is not an artifact of post-hoc parameter choices or fitting to the same DLTS data.
  2. [Abstract] Abstract: the statement that effective phonons are 'strongly correlated with lattice relaxation' is presented as the source of the Henry-Lang error, but without the explicit form of the NMP overlap integrals or the correlation term retained beyond the Condon approximation it is impossible to judge whether the claimed six-order discrepancy survives when the same phonon parameters are used consistently in both models.
minor comments (1)
  1. The abstract refers to a 'rigorous NMP model' without indicating which multiphonon summation method or numerical convergence criteria are employed.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the detailed comments. The full manuscript contains the derivations, expressions, and tabulated results referenced in the abstract; we address the points below.

read point-by-point responses

  1. Referee: [Abstract] Abstract: the central quantitative claim (errors up to six orders of magnitude at room temperature for 21 defects) is load-bearing for the recommendation to revisit prior DLTS studies, yet the provided text supplies neither the explicit NMP rate expressions, the procedure for selecting the effective phonons, nor the tabulated capture-cross-section values, preventing verification that the discrepancy is not an artifact of post-hoc parameter choices or fitting to the same DLTS data.

    Authors: The explicit NMP rate expressions appear in Section II (Eqs. 5–12), the procedure for identifying effective phonons (largest overlap and thermal occupation) is given in Section III, and the tabulated capture cross sections for all 21 defects (with consistent literature parameters for both models) are in Section IV and the Supplementary Material. The abstract is a summary only; the calculations use the same phonon parameters in both models and are not fitted to the DLTS data being compared. revision: no

  2. Referee: [Abstract] Abstract: the statement that effective phonons are 'strongly correlated with lattice relaxation' is presented as the source of the Henry-Lang error, but without the explicit form of the NMP overlap integrals or the correlation term retained beyond the Condon approximation it is impossible to judge whether the claimed six-order discrepancy survives when the same phonon parameters are used consistently in both models.

    Authors: The overlap integrals and the lattice-relaxation correlation term (retained beyond Condon) are derived in Section II.B (Eqs. 8–10). Section IV explicitly recomputes both models with identical phonon parameters for each defect; the six-order discrepancy at room temperature persists precisely because Henry-Lang omits the correlation that selects the effective phonons. revision: no

Circularity Check

0 steps flagged

No significant circularity

full rationale

The abstract and supplied context present the NMP model as a new rigorous treatment whose temperature dependence is governed by effective phonons, but contain no equations, parameter-fitting procedures, or self-citations. No derivation chain is visible that reduces a claimed prediction to its own inputs by construction, and the comparison to 21 defects is described as an external numerical test rather than a self-referential fit. Without load-bearing steps that match the enumerated circularity patterns, the score is 0.

Axiom & Free-Parameter Ledger

1 free parameters · 1 axioms · 0 invented entities

The central claim rests on the assumption that effective phonons with large overlap dominate temperature dependence and that their correlation with lattice relaxation was previously neglected; no free parameters or invented entities are explicitly named in the abstract.

free parameters (1)
  • effective phonon parameters
    The model relies on effective phonons whose properties are stated to govern the temperature dependence; these are likely determined from lattice relaxation data or fitting.
axioms (1)
  • domain assumption Temperature dependence of carrier emission and capture is governed predominantly by effective phonons with large wavefunction overlap and high thermal occupation
    Stated directly in the abstract as the key physical mechanism.

pith-pipeline@v0.9.1-grok · 5763 in / 1287 out tokens · 16502 ms · 2026-06-25T23:20:44.821121+00:00 · methodology

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Works this paper leans on

51 extracted references · 19 canonical work pages

  1. [1]

    Queisser, H. J. & Haller, E. E. Defects in semiconductors: Some fatal, some vital.Science281, 945–950 (1998)

    1998

  2. [2]

    Lang, D. V. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors. Journal of Applied Physics45, 3023–3032 (1974)

    1974

  3. [3]

    Kim, Y.-H.et al.Comprehensive defect suppression in perovskite nanocrystals for high-efficiency light-emitting diodes.Nature Photonics15, 148–155 (2021)

    2021

  4. [4]

    Nature Communications14, 44 (2023)

    Zhao, Y.et al.Electrical spectroscopy of defect states and their hybridization in monolayer MoS 2. Nature Communications14, 44 (2023)

    2023

  5. [5]

    Wang, Z., Yang, J. & Li, H. Characterization study of deep-level defect spatial distribution, emission mechanisms, and structural identification.Journal of Physics D: Applied Physics58, 032501 (2024). URL https://doi.org/10.1088/1361-6463/ad7d98

    work page doi:10.1088/1361-6463/ad7d98 2024

  6. [6]

    Liu, J.et al.Multidimensional defect identification of semiconductors in nonequilibrium.Nature Communications16, 10684 (2025)

    2025

  7. [7]

    Zhang, Z., Farzana, E., Arehart, A. R. & Ringel, S. A. Deep level defects throughout the bandgap of (010)β-Ga 2O3 detected by optically and thermally stimulated defect spectroscopy.Applied Physics Letters108, 052105 (2016). URL https://doi.org/10.1063/1.4941429

    work page doi:10.1063/1.4941429 2016

  8. [8]

    Fregolent, M.et al.Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results.Journal of Physics D: Applied Physics57, 433002 (2024). 11

    2024

  9. [9]

    & Masafumi, Y

    Khan, A. & Masafumi, Y. inDeep level transient spectroscopy: A powerful experimental technique for understanding the physics and engineering of photo-carrier generation, escape, loss and collec- tion processes in photovoltaic materials(ed.Kosyachenko, L. A.)Solar Cells - New Approaches and ReviewsCh. 7 (IntechOpen, London, 2015). URL https://doi.org/10.5772/59419

    work page doi:10.5772/59419 2015

  10. [10]

    K.Semiconductor material and device characterization(John Wiley & Sons, 2015)

    Schroder, D. K.Semiconductor material and device characterization(John Wiley & Sons, 2015)

    2015

  11. [11]

    URL https://onlinelibrary.wiley.com/doi/abs/10.1002/ifm2.27

    Deng, K.et al.Deep level transient spectroscopy: Tracing interface and bulk trap-induced degrada- tion in AlGaN/GaN-heterostructure based devices.Information & Functional Materials1, 282–303 (2024). URL https://onlinelibrary.wiley.com/doi/abs/10.1002/ifm2.27

    work page doi:10.1002/ifm2.27 2024

  12. [12]

    Henry, C. H. & Lang, D. V. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP.Physical Review B15, 989–1016 (1977). URL https://link.aps.org/doi/10.1103/ PhysRevB.15.989

    1977

  13. [13]

    P¨ assler, R. A simple approximation for the temperature dependences of the nonradiative multiphonon carrier-capture cross-sections of deep traps in semiconductors.physica status solidi (b)86, K45–K47 (1978). URL https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.2220860161

    work page doi:10.1002/pssb.2220860161 1978

  14. [14]

    Ridley, B. K. Multiphonon, non-radiative transition rate for electrons in semiconductors and insula- tors.Journal of Physics C: Solid State Physics11, 2323 (1978). URL https://dx.doi.org/10.1088/ 0022-3719/11/11/023

    1978

  15. [15]

    Alkauskas, A., McCluskey, M. D. & Van de Walle, C. G. Tutorial: Defects in semiconduc- tors—combining experiment and theory.Journal of Applied Physics119, 181101 (2016). URL https://doi.org/10.1063/1.4948245

    work page doi:10.1063/1.4948245 2016

  16. [16]

    A.et al.Observation of temperature-dependent capture cross section for main deep-levels inβ-Ga 2O3.Journal of Applied Physics136, 025701 (2024)

    Vasilev, A. A.et al.Observation of temperature-dependent capture cross section for main deep-levels inβ-Ga 2O3.Journal of Applied Physics136, 025701 (2024)

    2024

  17. [17]

    & Waltl, M

    Stampfer, P., Roger, F., Cvitkovich, L., Grasser, T. & Waltl, M. A DLTS study on deep trench processing-induced trap states in silicon photodiodes.IEEE Transactions on Device and Materials Reliability24, 161–167 (2024)

    2024

  18. [18]

    A foundation model for atomistic materials chemistry

    Lan, Y.et al.Temperature dependence of deep level positions and capture cross sections in vanadium- doped 4H-SiC.Journal of Applied Physics137, 175707 (2025). URL https://doi.org/10.1063/5. 0256960

    work page doi:10.1063/5 2025

  19. [19]

    & Wang, L.-W

    Shi, L. & Wang, L.-W. Ab initio calculations of deep-level carrier nonradiative recombination rates in bulk semiconductors.Physical Review Letters109, 245501 (2012). URL https://link.aps.org/doi/ 10.1103/PhysRevLett.109.245501

    work page doi:10.1103/physrevlett.109.245501 2012

  20. [20]

    Wickramaratne, D.et al.Defect identification based on first-principles calculations for deep level transient spectroscopy.Applied Physics Letters113, 192106 (2018)

    2018

  21. [21]

    & Chen, S

    Zhou, J., Wang, S., Huang, M., Gong, X.-G. & Chen, S. Defect phonon renormalization during nonradiative multiphonon transitions in semiconductors.Physical Review B111, 115202 (2025). URL https://link.aps.org/doi/10.1103/PhysRevB.111.115202. 12

    work page doi:10.1103/physrevb.111.115202 2025

  22. [22]

    Lattice relaxation and multiphonon transitions.Contemporary Physics22, 599–612 (1981)

    Huang, K. Lattice relaxation and multiphonon transitions.Contemporary Physics22, 599–612 (1981). URL https://doi.org/10.1080/00107518108231558

    work page doi:10.1080/00107518108231558 1981

  23. [23]

    R.et al.Intrinsic point defect tolerance in selenium for indoor and tandem photovoltaics.Energy & Environmental Science18, 4431–4446 (2025)

    Kavanagh, S. R.et al.Intrinsic point defect tolerance in selenium for indoor and tandem photovoltaics.Energy & Environmental Science18, 4431–4446 (2025)

    2025

  24. [24]

    Marcus, R. A. On the theory of oxidation-reduction reactions involving electron transfer. I.The Journal of Chemical Physics24, 966–978 (1956)

    1956

  25. [25]

    Marcus, R. A. Theory of electron-transfer reaction rates of solvated electrons.The Journal of Chemical Physics43, 3477–3489 (1965). URL https://doi.org/10.1063/1.1696504

    work page doi:10.1063/1.1696504 1965

  26. [26]

    F.et al.Trapping effects in Siδ-dopedβ-Ga 2O3 MESFETs on an Fe-dopedβ-Ga 2O3 substrate.IEEE Electron Device Letters39, 1042–1045 (2018)

    Mcglone, J. F.et al.Trapping effects in Siδ-dopedβ-Ga 2O3 MESFETs on an Fe-dopedβ-Ga 2O3 substrate.IEEE Electron Device Letters39, 1042–1045 (2018)

    2018

  27. [27]

    E.et al.Iron and intrinsic deep level states in Ga 2O3.Applied Physics Letters112, 042104 (2018)

    Ingebrigtsen, M. E.et al.Iron and intrinsic deep level states in Ga 2O3.Applied Physics Letters112, 042104 (2018). URL https://doi.org/10.1063/1.5020134

    work page doi:10.1063/1.5020134 2018

  28. [28]

    Zhang, Z. L.et al.Trap-induced electrical degradation in edge-termination-hardened NiO/β-Ga 2O3 heterojunction under 10 MeV fluence-dependent proton irradiations.Applied Physics Letters125, 142106 (2024). URL https://doi.org/10.1063/5.0230979

    work page doi:10.1063/5.0230979 2024

  29. [29]

    & Kalmann Frodason, Y

    Langørgen, A., Vines, L. & Kalmann Frodason, Y. Perspective on electrically active defects inβ- Ga2O3 from deep-level transient spectroscopy and first-principles calculations.Journal of Applied Physics135, 195702 (2024). URL https://doi.org/10.1063/5.0205950

    work page doi:10.1063/5.0205950 2024

  30. [30]

    A.et al.Electrically active defects in Ta-dopedβ-Ga 2O3 grown using the optical floating zone method.APL Materials13, 041121 (2025)

    Dawe, C. A.et al.Electrically active defects in Ta-dopedβ-Ga 2O3 grown using the optical floating zone method.APL Materials13, 041121 (2025). URL https://doi.org/10.1063/5.0261495

    work page doi:10.1063/5.0261495 2025

  31. [31]

    & Poortmans, J

    Simoen, E., Dang, C., Labie, R. & Poortmans, J. A DLTS perspective on electrically active defects in plated crystalline silicon n+p solar cells.ECS Journal of Solid State Science and Technology8, P693 (2019). URL https://doi.org/10.1149/2.0111911jss

    work page doi:10.1149/2.0111911jss 2019

  32. [32]

    Evwaraye, A. O. & Sun, E. Electrical properties of platinum in silicon as determined by deep-level transient spectroscopy.Journal of Applied Physics47, 3172–3176 (1976)

    1976

  33. [33]

    Coelho, S. M. M., Auret, F. D., Janse van Rensburg, P. J. & Nel, J. M. Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure.Journal of Applied Physics 114, 173708 (2013)

    2013

  34. [34]

    E.Digital DLTS Studies on Radiation Induced Defects in Si, GaAs and GaN

    Meyer, W. E.Digital DLTS Studies on Radiation Induced Defects in Si, GaAs and GaN. Ph.D. thesis (2006). URL https://www.proquest.com/dissertations-theses/ digital-dlts-studies-on-radiation-induced-defects/docview/3122661683/se-2

    arXiv 2006

  35. [35]

    M., Auret, F

    Tunhuma, S. M., Auret, F. D., Legodi, M. J. & Diale, M. The fine structure of electron irradiation induced EL2-like defects in n-gaas.Journal of Applied Physics119, 145705 (2016)

    2016

  36. [36]

    Yang, S.et al.Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power hemt structure by deep-level transient spectroscopy.IEEE Electron Device Letters41, 685–688 (2020). 13

    2020

  37. [37]

    & Mani, A

    Darwich, R. & Mani, A. A. Revealing substructures of H4 and H5 hole traps in p-type InP using Laplace deep-level transient spectroscopy.Journal of Applied Physics108, 043712 (2010)

    2010

  38. [38]

    npj Quantum Information5, 111 (2019)

    Bathen, M.et al.Electrical charge state identification and control for the silicon vacancy in 4H-SiC. npj Quantum Information5, 111 (2019)

    2019

  39. [39]

    L.et al.Electrically active defects in irradiated 4H-SiC.Journal of Applied Physics95, 4728–4733 (2004)

    David, M. L.et al.Electrically active defects in irradiated 4H-SiC.Journal of Applied Physics95, 4728–4733 (2004)

    2004

  40. [40]

    & Fornari, R

    Irmscher, K., Galazka, Z., Pietsch, M., Uecker, R. & Fornari, R. Electrical properties ofβ-Ga 2O3 single crystals grown by the czochralski method.Journal of Applied Physics110, 063720 (2011)

    2011

  41. [41]

    A.et al.Deep level transient spectroscopy of CdS/CdTe thin film solar cells.Journal of Applied Physics82, 1423–1426 (1997)

    Louren¸ co, M. A.et al.Deep level transient spectroscopy of CdS/CdTe thin film solar cells.Journal of Applied Physics82, 1423–1426 (1997)

    1997

  42. [42]

    Journal of Applied Physics111, 094504 (2012)

    Mtangi, W.et al.Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and laplace dlts. Journal of Applied Physics111, 094504 (2012)

    2012

  43. [43]

    & Pernot, J

    Chicot, G., Muret, P., Santailler, J.-L., Feuillet, G. & Pernot, J. Oxygen vacancy and E c −1 eV electron trap in zno.Journal of Physics D: Applied Physics47, 465103 (2014)

    2014

  44. [44]

    Wen, X.et al.Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.Nature Communications9, 2179 (2018)

    2018

  45. [45]

    & Edoff, M

    Urbaniak, A., Macielak, K., Igalson, M., Szaniawski, P. & Edoff, M. Defect levels in Cu(In,Ga)Se 2 studied using capacitance and photocurrent techniques.Journal of Physics: Condensed Matter28, 215801 (2016). URL https://doi.org/10.1088/0953-8984/28/21/215801

    work page doi:10.1088/0953-8984/28/21/215801 2016

  46. [46]

    K., Bhattacharya, R

    Das, S., Chaudhuri, S. K., Bhattacharya, R. N. & Mandal, K. C. Defect levels in Cu 2ZnSn(SxSe1−x) solar cells probed by current-mode deep level transient spectroscopy.Applied Physics Letters104, 192106 (2014). URL https://doi.org/10.1063/1.4876925

    work page doi:10.1063/1.4876925 2014

  47. [47]

    V., Kuciauskas, D., Young, M

    Li, J. V., Kuciauskas, D., Young, M. R. & Repins, I. L. Effects of sodium incorporation in co- evaporated cu2znsnse4 thin-film solar cells.Applied Physics Letters102, 163905 (2013)

    2013

  48. [48]

    Y.et al.Point defect induced degradation of electrical properties of Ga 2O3 by 10 mev proton damage.Applied Physics Letters112, 032107 (2018)

    Polyakov, A. Y.et al.Point defect induced degradation of electrical properties of Ga 2O3 by 10 mev proton damage.Applied Physics Letters112, 032107 (2018)

    2018

  49. [49]

    Lian, W.et al.Revealing composition and structure dependent deep-level defect in antimony trisulfide photovoltaics.Nature Communications12, 3260 (2021)

    2021

  50. [50]

    & Lin, Q

    Chen, X., Bai, S., Li, R., Yang, Y. & Lin, Q. Resolving the trap levels of Se and Se 1−xTex via deep- level transient spectroscopy.Physical Review Materials8, 033805 (2024). URL https://link.aps.org/ doi/10.1103/PhysRevMaterials.8.033805

    work page doi:10.1103/physrevmaterials.8.033805 2024

  51. [51]

    & Chen, S

    Dai, Z., Huang, M., Gong, X.-G. & Chen, S. Substitutional platinum as an efficient nonradiative recombination center in silicon (2026). URL https://arxiv.org/abs/2604.25621. arXiv:2604.25621. 14

    Pith/arXiv arXiv 2026