The reviewed record of science sign in
Pith

arxiv: 2110.12632 · v1 · pith:4B5N2LIX · submitted 2021-10-25 · physics.ins-det · hep-ex

Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

Reviewed by Pithpith:4B5N2LIXopen to challenge →

classification physics.ins-det hep-ex
keywords carbonihep-imelayerlgadsensorsshallowapplieddeep
0
0 comments X
read the original abstract

Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade the ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics (IME). Three IHEP-IME sensors (W1, W7 and W8) were irradiated by the neutrons up to the fluence of 2.5 x 10^15 n_eq/cm^2 to study the effect of the shallow carbon and deep N++ layer on the irradiation hardness. Taking W7 as a reference, W1 has an extra shallow carbon applied, and W8 has a deeper N++ layer.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.