REVIEW 3 major objections 4 minor 56 references
Multistability and state-switching in series-coupled resonant tunneling diodes
T0 review · 3 major / 4 minor · reviewed 2026-08-03 · deepseek-v4-flash
Pith's one-line read Two series-coupled resonant tunneling diodes, balanced by exchange symmetry, develop a symmetric and two antisymmetric stable states at a single bias voltage, and a short current pulse into one diode switches among all three, realizing a tr
desk verdict Solid bifurcation analysis with a plausible but under-tested tristable memory claim. read the letter →
The pith
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
The reading
What carries the argument
The Z2 exchange symmetry of the two-RTD circuit and the decomposition into symmetric and antisymmetric coordinates (s,a). The normal form of the pitchfork bifurcation — a-dot = r a + beta a^3 + gamma a^5 — obtained by Taylor expanding the antisymmetric dynamics around the symmetric manifold; it determines where the antisymmetric branches are born and how they stabilize. The slow-fast separation of the voltage (fast) and current (slow) variables, which confines equilibria to the critical manifold C0 and makes the bifurcation analysis analytically tractable.
What would settle it
Measure the basin of attraction of the three predicted stable states in a physical two-RTD circuit biased at 6 V. If up/down bias sweeps fail to show the two jump-hysteresis events at the predicted pitchfork and saddle-node voltages, or if a current pulse of the amplitude and duration used in Fig. 7(c) does not switch the state from one stable fixed point to another, the tristable memory claim is refuted.
Extended reading notes
Core claim
The central claim is that multistability in series-coupled RTDs is enforced by a Z2 exchange symmetry, not by the details of the nonlinearity. Because the fixed-point equations reduce to I=f(V1)=f(V2) and V0=V1+V2+RI, the equilibrium set is a projection of the critical manifold; when the two RTDs are identical, the Jacobian splits into symmetric and antisymmetric eigenmodes. The antisymmetric eigenvalue changes sign when the derivative of the RTD current-voltage curve vanishes, which is exactly the condition for a pitchfork bifurcation. The authors derive the pitchfork normal form a-dot = r a + beta a^3 + gamma a^5, show that a negative quintic term stabilizes the antisymmetric branches, and
Load-bearing premise
The scheme relies on the two RTDs having exactly the same current-voltage characteristic f(V); any difference in the tunneling curves would break the exchange symmetry, unfold the pitchfork bifurcations, and could eliminate the tristable basin structure that the switching pulses exploit.
Editorial extensions
If this is right
- If the claim is correct, a two-terminal circuit made of two commercial RTDs can act as a persistent tristable memory, with state read-out via the individual diode voltages.
- The same symmetry-breaking mechanism generalizes to N series-coupled RTDs, where the permutation symmetry S_N organizes multiple coexisting fixed-point branches, so larger multistate memories could be built by adding more diodes in series.
- The hysteresis observed in current-bias scans of such circuits is not a nuisance but a functional signature: it marks the existence of symmetry-broken states that can be selected by pulses.
- The bifurcation analysis gives quantitative design rules, such as biasing near 6 V and using a slight capacitance asymmetry (κ=1.1) to shrink oscillating regions and enlarge the tristable basin, for when the switching scheme works.
Reading between the lines
- Editorially, the same symmetry-breaking mechanism should appear in any series network of N-shaped negative-differential-resistance devices, not just the specific Schulman I-V curve used here; the normal-form derivation depends only on the shape of f, so tunnel diodes, Gunn diodes, or vanadium dioxide oscillators might exhibit analogous tristable switching.
- The switching protocol relies on injecting current into only one node; scaling to N devices would require addressing individual devices, but the S_N symmetry implies the state space is organized so that pulses excite symmetry-breaking modes, potentially enabling robust state selection in larger arrays.
- A first experimental test would be to measure the three basins of attraction directly and check whether pulses of the amplitude and duration used in Fig. 7(c) actually switch the state; the simulation predicts a specific pulse protocol that should be reproducible on hardware.
- The THz-speed capability of RTDs suggests fast switching, but the inductor L sets the characteristic time scale through the slow-fast parameter µ; an energy-delay estimate for the proposed memory would be a natural next step to benchmark against SRAM.
Editorial analysis
A structured set of objections, weighed in public.
Referee Report
Summary. The paper studies two series-coupled resonant tunneling diodes described by a three-dimensional slow-fast ODE model with a phenomenological RTD current-voltage characteristic. It derives equilibrium branches, identifies pitchfork and Hopf bifurcations, computes limit cycles, and presents two-parameter continuations. For identical RTDs (κ=1) it uses Z2 exchange symmetry to derive normal-form conditions for symmetry-breaking pitchforks. It proposes current-pulse switching between three coexisting stable fixed points at V0=6 V for κ=1.1, and generalizes the symmetry discussion to N RTDs with SN symmetry.
Significance. The analytic pitchfork and Hopf conditions for the symmetric case are a useful contribution, and the explicit demonstration of controllable switching among three fixed points is promising for neuromorphic memory. However, the memory claim is currently supported by a single numerical example and relies on a symmetry-breaking framework that only strictly applies in the identical-capacitance case; robustness to realistic device mismatch is not established. The N-RTD generalization is mostly descriptive.
major comments (3)
- [Sec. IV, Fig. 7, Conclusion] The central memory claim is supported by a single simulation at V0=6 V, R=1 Ω, μ=0.05 Ω^{-1}, κ=1.1. No continuation of the tristable region in parameter space, no pulse-amplitude/duration margin, and no basin calculations for perturbed f are reported. For κ=1, Fig. 7(a) contains white regions without tristable basins, so the claimed tristable memory is not generic even within the model family. The Conclusion's 'thereby enabling tristable memory operation' overstates the evidence.
- [Sec. III B, Eqs. (13)-(16), Fig. 4(d)] The pitchfork normal form is derived under the Z2-equivariance condition κ=1 and f1=f2. For κ=1.1 the vector field (2)-(4) is not equivariant: the diagonal V1=V2 is not invariant, the quadratic term in the a-equation does not vanish, and the former pitchfork unfolds. The paper nonetheless labels magenta triangles in Fig. 4(d) as pitchfork bifurcations and uses pitchfork language for the non-identical case. This is a technical inconsistency in the regime used for the switching demonstration.
- [Sec. III opening and Conclusion] The only inhomogeneity considered is κ=C2/C1 with f1=f2 throughout. Device-to-device variation in f(V) is never tested. Since the Z2 mechanism and the two equivalent antisymmetric states require f1=f2, the statement in the Conclusion that 'the qualitative bifurcation structure is expected to remain unchanged' for different RTD designs is unsupported. A small f-mismatch perturbation or two-parameter continuation is required to establish robustness of the tristable switching scheme.
minor comments (4)
- [Sec. III] The term 'non-identical' is used for κ=1.1 even though f1=f2; recommend 'capacitance-mismatched' or 'κ-mismatched' to avoid implying I-V mismatch.
- [Fig. 7 caption and Sec. IV] The basins are shown in the (V1,V2) plane with I0 fixed at 0.028 A; the text should state explicitly that this is a 2D slice and that the basin structure could differ for other I0. Also, pulse amplitudes/durations are not reported; please add the pulse parameters to the figure or text.
- [Sec. IV] The text says simulations are initialized at the origin (V1,V2,I)=(0,0,0), but then describes starting in the lower-right fixed point. This transition should be clarified.
- [General] No code or data repository is provided for the BifurcationKit continuation or the Python simulations; archiving the code would strengthen reproducibility.
Circularity Check
No significant circularity: the central bifurcation and switching results are derived from the stated model equations and demonstrated numerically, not fitted or renamed.
full rationale
The paper's derivation chain is self-contained. The RTD characteristic f(V) in Eq. (1) is taken from Schulman et al. [50], and the circuit equations (2)-(4) are the stated model. The pitchfork normal form (13), the Hopf conditions (23)-(24), and the saddle-node conditions (18)-(19) are all derived from those equations by Taylor expansion and eigenvalue analysis; no target result is used to define the model. The Z2/S_N symmetry is explicitly imposed by taking identical RTDs (f1=f2, kappa=1), which is transparent and not a disguised conclusion. The tristable switching demonstration at V0=6 V is a numerical simulation of Eqs. (29)-(31), not a parameter fit to the switching outcome, so it is not a fitted input called a prediction. Self-citations such as [33,34,41] are contextual and not load-bearing for the main claim. The paper's caveat that the qualitative bifurcation structure is expected to remain unchanged for other RTD parameter sets is an unsupported robustness claim, but that is a correctness/risk concern, not circularity. No equation or claim reduces by construction to its own input.
Assumptions & free parameters
free parameters (6)
- RTD I-V curve parameters in Eq. (1) =
a=0.0039 A, b=0.05 V, c=0.0874 V, d=0.0073 V, n1=0.0352, n2=0.0031, h=0.0367 A, T=300 K
- Series resistance R =
1 Ω
- Stiffness parameter μ =
0.05 Ω^-1
- Capacitance ratio κ =
1 and 1.1
- Operating bias V0 =
6 V
- Switching current pulses Iin(t) =
see Fig. 7(c)
assumptions (5)
- domain assumption The RTD current-voltage relation f(V) in Eq. (1) with the Schulman parameters describes the physical device.
- domain assumption The lumped-element circuit model in Eqs. (2)-(4) captures the dynamics of series-coupled RTDs.
- domain assumption For μ << 1, slow-fast separation and the critical manifold C0 in Eq. (5) organize the dynamics.
- domain assumption The Z2 exchange symmetry requires exactly identical f1=f2 and κ=1.
- ad hoc to paper The quintic coefficient γ is negative at the pitchfork points (equivalently f^(5)(s)>0), stabilizing the symmetry-broken branches.
Cite this review
Pith. "Pith review of Multistability and state-switching in series-coupled resonant tunneling diodes." pith.science (2026). https://pith.science/paper/5MRW4PHN
@misc{pith2026260729212,
author = {Pith},
title = {Pith review of: Multistability and state-switching in series-coupled resonant tunneling diodes},
year = {2026},
howpublished = {\url{https://pith.science/paper/5MRW4PHN}},
note = {Machine review of arXiv:2607.29212}
}
abstract
Resonant tunneling diodes (RTDs) embedded in an electrical circuit are known for their neuron-like response characteristics, which makes them promising candidates for neuromorphic applications. This paper investigates the dynamical response of series-coupled RTDs and systematically analyzes the impact of coupling and inhomogeneities on the solution structure. We further propose a scheme for controlled switching between coexisting stable states which allows to realize tunable memory elements in these circuits. The coupled RTD system exhibits a rich bifurcation structure, showing different degrees of multistability between symmetric and antisymmetric solutions. Limit-cycle branches and their dependence on the system parameters are analyzed using numerical continuation methods. A central focus is placed on the role of symmetry. For two identical RTDs, the system possesses a $\mathbb{Z}_2$ exchange symmetry, which governs the emergence of symmetry-breaking bifurcations and multistable states. The analysis is further generalized to $N$ coupled RTDs, revealing the underlying $S_N$ symmetry structure and its influence on the organization of equilibrium branches, paving the way for neuromorphic network operation.
Reference graph
Works this paper leans on
-
[1]
Kudithipudi, C
D. Kudithipudi, C. Schuman, C. M. Vineyard, T. Pandit, C. Merkel, R. Kubendran, J. B. Aimone, G. Orchard, C. Mayr, R. Benosman, J. Hays, C. Young, C. Bartolozzi, A. Majumdar, S. G. Cardwell, M. Payvand, S. Buckley, S. Kulkarni, H. A. Gonzalez, G. Cauwenberghs, C. S. Thakur, A. Subramoney, and S. Furber, Neuromorphic computing at scale, Nature637, 801 (2025)
2025
-
[2]
Ironside, B
C. Ironside, B. Romeira, and J. Figueiredo,Resonant Tunnelling Diode Photonics Devices and Applications (Second Edition), 2053-2563 (IOP Publishing, 2023)
-
[3]
A. L. Hodgkin and A. F. Huxley, A quantitative descrip- tion of membrane current and its application to conduc- tion and excitation in nerve, J. Physiol.117, 500 (1952)
1952
-
[4]
A. L. Hodgkin, A. F. Huxley, and B. Katz, Measurement of current–voltage relations in the membrane of the giant axon of Loligo, J. Physiol.116, 424 (1952)
1952
-
[5]
FitzHugh, Mathematical models of threshold phenom- ena in the nerve membrane, Bull
R. FitzHugh, Mathematical models of threshold phenom- ena in the nerve membrane, Bull. Math. Biophys.17, 257 (1955)
1955
-
[6]
Cebri´ an-Lacasa, P
D. Cebri´ an-Lacasa, P. Parra-Rivas, D. Ruiz-Reyn´ es, and L. Gelens, Six decades of the fitzhugh–nagumo model: A guide through its spatio-temporal dynamics and influence across disciplines, Phys. Rep.1096, 1 (2024)
2024
-
[7]
Izhikevich, Simple model of spiking neurons, IEEE Trans
E. Izhikevich, Simple model of spiking neurons, IEEE Trans. Neural Netw.14, 1569 (2003)
2003
-
[8]
Todri-Sanial, C
A. Todri-Sanial, C. Delacour, M. Abernot, and F. Sabo, Computing with oscillators from theoretical underpin- nings to applications and demonstrators, npj Unconv. Comput.1, 14 (2024)
2024
Show all 56 references
-
[9]
Romeira, R
B. Romeira, R. Ad˜ ao, J. B. Nieder, Q. Al-Taai, W. Zhang, R. H. Hadfield, E. Wasige, M. Hejda, A. Hur- tado, E. Malysheva, V. Dolores Calzadilla, J. Louren¸ co, D. Castro Alves, J. M. L. Figueiredo, I. Ortega-Piwonka, J. Javaloyes, S. Edwards, J. I. Davies, F. Horst, and B. J...
2023
-
[10]
in view of the fact that RTDs exhibit phenomena including excitable spiking [23–25], bursting [10, 19] and integrate-and-fire mechanisms [26]. Recent investigations have led to the observation that single RTDs also ex- hibit a spiking flip-flop memory [27], meaning that the RT...
-
[11]
Tsu and L
R. Tsu and L. Esaki, Tunneling in a finite superlattice, Appl. Phys. Lett.22, 562 (1973)
1973
-
[12]
Romeira, J
B. Romeira, J. M. L. Figueiredo, and J. Javaloyes, Delay dynamics of neuromorphic optoelectronic nanoscale res- onators: Perspectives and applications, Chaos27, 114323 (2017)
2017
-
[13]
J. R. S¨ oderstr¨ om, D. H. Chow, and T. C. McGill, New negative differential resistance device based on resonant interband tunneling, Appl. Phys. Lett.55, 1094 (1989)
1989
-
[14]
L. L. Chang, L. Esaki, and R. Tsu, Resonant tunneling in semiconductor double barriers, Appl. Phys. Lett.24, 593 (1974)
1974
-
[15]
Samanta, Gaas-based resonant tunneling diode: De- vice aspects from design, manufacturing, characteriza- tion and applications, J
S. Samanta, Gaas-based resonant tunneling diode: De- vice aspects from design, manufacturing, characteriza- tion and applications, J. Semicond.44, 103101 (2023)
2023
-
[16]
Cimbri, J
D. Cimbri, J. Wang, A. Al-Khalidi, and E. Wasige, Reso- nant tunneling diodes high-speed terahertz wireless com- munications - a review, IEEE Trans. Terahertz Sci. Tech- nol.12, 226 (2022)
2022
-
[17]
Teitsworth, M
S. Teitsworth, M. Olson, and Y. Bomze, Scaling proper- ties of noise-induced switching in a bistable tunnel diode circuit, Eur. Phys. J. B92, 74 (2019)
2019
-
[18]
H. C. Liu, Simulation of extrinsic bistability of resonant tunneling structures, Appl. Phys. Lett.53, 485 (1988)
1988
-
[19]
Ortega-Piwonka, O
I. Ortega-Piwonka, O. Piro, J. Figueiredo, B. Romeira, and J. Javaloyes, Bursting and excitability in neuromor- phic resonant tunneling diodes, Phys. Rev. Appl.15, 034017 (2021)
2021
-
[20]
C. R. Wallis and S. W. Teitsworth, Hopf bifurcations and hysteresis in resonant tunneling diode circuits, J. Appl. Phys.76, 4443 (1994)
1994
-
[21]
Wechselberger, J
M. Wechselberger, J. Mitry, and J. Rinzel, Canard the- ory and excitability, inNonautonomous Dynamical Sys- tems in the Life Sciences, edited by P. E. Kloeden and C. P¨ otzsche (Springer International Publishing, Cham,
-
[22]
Ortega-Piwonka, A
I. Ortega-Piwonka, A. E. Teruel, R. Prohens, C. Vich, and J. Javaloyes, Simplified description of dynamics in neuromorphic resonant tunneling diodes, Chaos31, 113128 (2021)
2021
-
[23]
Romeira, J
B. Romeira, J. Javaloyes, C. N. Ironside, J. M. L. Figueiredo, S. Balle, and O. Piro, Excitability and op- tical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors, Opt. Express 21, 20931 (2013)
2013
-
[24]
Ortega-Piwonka, M
I. Ortega-Piwonka, M. Hejda, J. Alanis, J. Lourenco, A. Hurtado, J. Figueiredo, B. Romeira, and J. Javal- oyes, Spike propagation in a nanolaser-based optoelec- tronic neuron, Opt. Mater. Express12, 2679 (2022)
2022
-
[25]
Zhang, A
W. Zhang, A. Al-Khalidi, J. Figueiredo, Q. R. A. Al-Taai, E. Wasige, and R. H. Hadfield, Analysis of excitability in resonant tunneling diode-photodetectors, Nanomaterials 11, 10.3390/nano11061590 (2021)
2021 doi
-
[26]
Jacob, J
B. Jacob, J. Silva, J. M. L. Figueiredo, J. B. Nieder, and B. Romeira, Light-induced negative differential re- sistance and neural oscillations in neuromorphic photonic semiconductor micropillar sensory neurons, Sci. Rep.15, 6805 (2025)
2025
-
[27]
Donati, D
G. Donati, D. Owen-Newns, J. Robertson, E. Maly- sheva, A. Adair, J. Figueiredo, B. Romeira, V. Dolores- Calzadilla, and A. Hurtado, Spiking flip-flop memory in resonant tunneling diode neurons, Phys. Rev. Lett.133, 267301 (2024)
2024
-
[28]
Robertson, D
J. Robertson, D. Black, Q. R. A. Al-Taai, G. Donati, E. Malysheva, B. Romeira, J. Figueiredo, V. Dolores- Calzadilla, E. Wasaige, and A. Hurtado, Ultrafast tem- poral integration and pattern recognition with photonic- electronic rtd spiking neurons, in2024 IEEE Photonics Confe...
2024
-
[29]
Donati, D
G. Donati, D. Owen-Newns, J. Robertson, X. Porte, E. Malysheva, J. Figueiredo, B. Romeira, V. Dolores- Calzadilla, and A. Hurtado, Spiking rate and latency en- coding with resonant tunneling diode neuron circuits and design influences, Phys. Rev. Appl.24, 024041 (2025)
2025
-
[30]
Owen-Newns, J
D. Owen-Newns, J. Robertson, G. Donati, Q. Al- Taai, J. Figueiredo, E. Wasige, K. L¨ udge, B. Romeira, and A. Hurtado, Neuromorphic photonic processing and memory with spiking resonant tunneling diode neurons 11 and neural networks, Adv. Intell. Syst.8, e202500800 (2025)
2025
-
[31]
Hejda, J
M. Hejda, J. A. Alanis, I. Ortega-Piwonka, J. Lourenco, J. Figueiredo, J. Javaloyes, B. Romeira, and A. Hurtado, Resonant tunneling diode nano-optoelectronic excitable nodes for neuromorphic spike-based information process- ing, Phys. Rev. Appl.17, 024072 (2022)
2022
-
[32]
Hejda, W
M. Hejda, W. Zhang, Q. Al-Taai, E. Malysheva, D. Owen-Newns, J. Figueiredo, B. Romeira, J. Robert- son, V. Dolores-Calzadilla, E. Wasige, and A. Hurtado, Programmable optical synaptic linking of neuromorphic photonic-electronic rtd spiking circuits, ACS Photonics 11, 4279 (2024)
2024
-
[33]
M¨ uhlnickel, J
L. M¨ uhlnickel, J. A. Jaurigue, L. C. Jaurigue, and K. L¨ udge, Reservoir computing using spin-vcsels - the in- fluence of timescales and data injection schemes, Comm. Phys.3, 033001 (2024)
2024
-
[34]
A. H. Abbas, H. Abdel-Ghani, and I. S. Maksymov, Resonant-tunnelling diode reservoir computing system for image recognition, Electronics14, 10.3390/electron- ics14224471 (2025)
2025 doi
-
[35]
Izumi, S
R. Izumi, S. Suzuki, and M. Asada, 1.98 thz resonant- tunneling-diode oscillator with reduced conduction loss by thick antenna electrode, in2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)(2017) pp. 1–2
2017
-
[36]
H. Dong, L. C. Jaurigue, and K. L¨ udge, Time- multiplexed reservoir computing with quantum-dot lasers: Impact of charge-carrier scattering timescale, Phys. Status Solidi RRL2025, 2400433 (2025)
2025
-
[37]
Oshima, K
N. Oshima, K. Hashimoto, S. Suzuki, and M. Asada, Wireless data transmission of 34 gbit/s at a 500-ghz range using resonant-tunnelling-diode terahertz oscilla- tor, Electron. Lett.52, 1897 (2016)
2016
-
[38]
J. Wang, K. Alharbi, A. Ofiare, H. Zhou, A. Khalid, D. Cumming, and E. Wasige, High performance resonant tunneling diode oscillators for thz applications, in2015 IEEE Compound Semiconductor Integrated Circuit Sym- posium (CSICS)(2015) pp. 1–4
2015
-
[39]
This integration results in mechanisms of information transmission similar to those in the human brain and nervous system
or Intel Quark SE [40]. This integration results in mechanisms of information transmission similar to those in the human brain and nervous system. With these intricate dynamics and promising hardware applications of RTDs in mind, we build on past RTD re- search with our system...
2026 arXiv
-
[40]
Oshima, K
N. Oshima, K. Hashimoto, D. Horikawa, S. Suzuki, and M. Asada, Wireless data transmission of 30 gbps at a 500-ghz range using resonant-tunneling-diode terahertz oscillator, in2016 IEEE MTT-S International Microwave Symposium (IMS)(2016) pp. 1–4
2016
-
[41]
P. A. Merolla, J. V. Arthur, R. Alvarez-Icaza, A. S. Cas- sidy, J. Sawada, F. Akopyan, B. L. Jackson, N. Imam, C. Guo, Y. Nakamura, B. Brezzo, I. Vo, S. K. Esser, R. Appuswamy, B. Taba, A. Amir, M. D. Flickner, W. P. Risk, R. Manohar, and D. S. Modha, A million spiking- neuron...
2014
-
[42]
Corporation,Intel Quark SE Microcontroller, Tech
I. Corporation,Intel Quark SE Microcontroller, Tech. Rep. Intel-SEEIM-4-2016 (Intel Corporation, 2016)
2016
-
[43]
R¨ ohm, K
A. R¨ ohm, K. L¨ udge, and I. Schneider, Bistability in two simple symmetrically coupled oscillators with symmetry- broken amplitude- and phase-locking, Chaos28, 063114 (2018)
2018
-
[44]
S. A. Campbell and M. Waite, Multistability in cou- pled fitzhugh–nagumo oscillators, Nonlinear Anal. The- ory Methods Appl.47, 1093 (2001), proceedings of the Third World Congres of Nonlinear Analysts
2001
-
[45]
Shim and P
Y. Shim and P. Husbands, The chaotic dynamics and multistability of two coupled fitzhugh–nagumo model neurons, Adapt. Behav.26, 165 (2018)
2018
-
[46]
Illing, Amplitude death of identical oscillators in net- works with direct coupling, Phys
L. Illing, Amplitude death of identical oscillators in net- works with direct coupling, Phys. Rev. E94, 022215 (2016)
2016
-
[47]
Santana, R
L. Santana, R. M. da Silva, H. A. Albuquerque, and C. Manchein, Transient dynamics and multistability in two electrically interacting fitzhugh–nagumo neurons, Chaos31, 053107 (2021)
2021
-
[48]
J. M. Martins, S. V. Gurevich, and J. Javaloyes, Ex- citability and memory in a time-delayed optoelectronic neuron, Phys. Rev. Appl.22, 024050 (2024)
2024
-
[49]
Heinrich, T
M. Heinrich, T. Dahms, V. Flunkert, S. W. Teitsworth, and E. Sch¨ oll, Symmetry breaking transitions in networks of nonlinear circuit elements, New J. Phys.12, 113030 (2010)
2010
-
[50]
Scheffer, J
M. Scheffer, J. Bascompte, W. A. Brock, V. Brovkin, S. R. Carpenter, V. Dakos, H. Held, E. H. van Nes, M. Ri- etkerk, and G. Sugihara, Early-warning signals for critical transitions, Nature461, 53 (2009)
2009
-
[51]
Ambika and J
G. Ambika and J. Kurths, Tipping in complex systems: theory, methods and applications, Eur. Phys. J. Spec. Top.230, 3177 (2021)
2021
-
[52]
Schulman, H
J. Schulman, H. De Los Santos, and D. Chow, Physics- based rtd current-voltage equation, IEEE Electron De- vice Lett.17, 220 (1996)
1996
-
[53]
Ourednik, G
P. Ourednik, G. Picco, D. Tuan Nguyen, C. Spudat, and M. Feiginov, Large-signal dynamics of resonant-tunneling diodes, J. Appl. Phys.133, 014501 (2023)
2023
-
[54]
Veltz, BifurcationKit.jl (2020)
R. Veltz, BifurcationKit.jl (2020)
2020
-
[55]
S. H. Strogatz,Nonlinear Dynamics and Chaos: With Applications to Physics, Biology, Chemistry, and Engi- neering, 2nd ed. (CRC Press, Boca Raton, FL, 2015)
2015
-
[56]
Y. A. Kuznetsov,Elements of Applied Bifurcation The- ory, 4th ed., Applied Mathematical Sciences, Vol. 112 (Springer, Cham, Switzerland, 2023). 12 Appendix A: Single R TD dynamics The dynamics of single RTDs were already investigated in detail by Ortega-Piwonka et al. in [19, ...
2023
Reviewed August 3, 2026 · model on record in the stance chip above.
Discussion (0). Continue with ORCID to comment.