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arxiv: 2508.20431 · v1 · pith:ANHEBOCI · submitted 2025-08-28 · physics.ins-det · eess.SP

Electrical Impedance Tomography with an Integrated Picoliter-Volume Subtractive Microfluidic Chamber in 65 nm CMOS

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classification physics.ins-det eess.SP
keywords cmostomographychipelectricalelectronicsimpedanceintegratedmicrofluidics
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Electrical impedance tomography with fully integrated microfluidics and electronics is presented for the first time in a CMOS chip. Chambers and electrodes are fabricated in the interconnect layers of a 65 nm CMOS chip through post-processing, enabling picoliter-volumes to be processed and imaged. Tomography maps are reconstructed by reading out voltages from a 16-element electrode array and processing the data off-chip, and sources of variation in reconstruction are discussed. The EIT system presented in this work serves as a proof-of-concept towards using CMOS as a platform for co-integrated microfluidics and electronics.

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