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Radiation damage of SiPMs
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The current understanding of radiation tollerance of Silicon Photomultipliers (SiPMs) is reviewd. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of irradiated SiPMs with X-ray, gamma, electron, proton and neutron sources are presented. The most critical effect of radiation on SiPMs is the increase of dark count rate, which makes it impossible to resolve signals generated by a single photon from the noise. Methods to characterize irradiated SiPMs after their single photo-electron resolution is lost are discussed. Due to the important similarity in the operation below the breakdown voltage, also older studies on radiadion damage of avalange photodiodes (APD) are reviewed. Finally, ideas are presented on how to approach the development of radiation hard SiPMs in the future.
Forward citations
Cited by 2 Pith papers
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ML-based muon identification using a FNAL-NICADD scintillator chamber for the MID subsystem of ALICE 3
A 70 cm iron absorber plus a boosted-decision-tree classifier on a scintillator chamber prototype suppresses 3 GeV/c pion candidates by a factor of about 30 at 98% muon efficiency.
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Response to cosmic muons of scintillator-SiPM assemblies measured at different temperatures
For scintillator tiles read out by silicon photomultipliers, adding reflective film makes the muon light yield temperature-dependent, with roughly 10 percent lower response at -30 C than at +30 C.
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