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Paper Citation Record · LEDGER

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways

As of 9 August 2026, this Paper Citation Record lists 100 of 152 outbound references and 0 inbound Pith citation observations for arXiv:2606.25281.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2606.25281 v1

Coverage vector

measured 100 of 152 reference resolution

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Source: paper_references, paper_reference_links, observed 2026-06-25T19:51:53.986302Z

measured 100 of 100 standing notices

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Source: scholarly_work_events, retraction_status_cache, observed 2026-08-09T06:31:02.800959+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

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measured 0 of 1 external citation measurements

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100 of 152 outbound references displayed

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Outbound references

Observation 089bcff1-4eb9-4332-a7db-e853c5cfdcb7 · outbound

This paper cites Power consumption and heat dissipation in ai data centers: A comparative analysis,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Power consumption and heat dissipation in ai data centers: A comparative analysis,

Reference 1

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Observation b7bf017f-7c39-4565-8152-495cb9fe6152 · outbound

This paper cites AI Load Dynamics--A Power Electronics Perspective.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways AI Load Dynamics--A Power Electronics Perspective

Reference 2

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arxiv_id, observed 2026-07-04T20:40:08.151065Z

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Observation fabce1fa-cfe8-450d-92e9-8aff609cc483 · outbound

This paper cites Prediction of overall energy consumption of data centers in different locations,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Prediction of overall energy consumption of data centers in different locations,

Reference 3

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Observation e2806208-2400-4820-a738-7c690f8163a8 · outbound

This paper cites Technology and applications of wide bandgap semiconductor materials: current state and future trends,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Technology and applications of wide bandgap semiconductor materials: current state and future trends,

Reference 4

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:dab57da9d930a4c20f30f44a2ce0501bc2b7faa0f6333a66116a136f2de96df5

Observation d65ddf5d-7e11-484b-bb63-d58064b84d63 · outbound

This paper cites Gallium nitride power devices in power electronics applications: State of art and perspectives,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gallium nitride power devices in power electronics applications: State of art and perspectives,

Reference 5

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:dd06381368f603dbc38ddf1e852274e3df143660f6f4149f2f96dc4f1d65e4e9

Observation 15ab521e-a0c4-4866-bd27-95dd690cf3e7 · outbound

This paper cites Gan-based power devices: Physics, reliability, and perspectives,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gan-based power devices: Physics, reliability, and perspectives,

Reference 6

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Observation 9fccd6fc-11a6-4917-9147-512e74dc2921 · outbound

This paper cites Advancements in energy efficient gan power devices and power modules for electric vehicle applications: A review,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Advancements in energy efficient gan power devices and power modules for electric vehicle applications: A review,

Reference 7

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:3c28bfd9ee60aade09621e9c5f409581a6a9e80bcb0b71deb0713c438649ee2f

Observation 75ef25d4-bf5b-49c3-bb63-07a4d49804fe · outbound

This paper cites Technology and reliability of normally-off gan hemts with p-type gate,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Technology and reliability of normally-off gan hemts with p-type gate,

Reference 8

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:440255b97619fc7bc1d627ce07761e2353c27786e7edc87cab37e1625a2e8a85

Observation 5c4edd6c-b335-4c41-beec-aa2c3cc568ba · outbound

This paper cites Vertical gan mosfet power devices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Vertical gan mosfet power devices,

Reference 9

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:7e0ab28f3cc445874c0dc7f17742dbc8d570b84a118a097c54df333b1a3b488e

Observation cdebacac-ae16-4ae7-9818-4917b214ba84 · outbound

This paper cites Vertical gan and vertical ga2o3 power transistors: status and challenges,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Vertical gan and vertical ga2o3 power transistors: status and challenges,

Reference 10

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:c06aadc431af5f89948c0e1b13af14d31dce1dd5ff26ea1e6486f3c3256817b4

Observation d5d6b47d-bbbd-4255-923b-036ba73b4620 · outbound

This paper cites An optimized vertical gan parallel split gate trench mosfet device structure for improved switching performance,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways An optimized vertical gan parallel split gate trench mosfet device structure for improved switching performance,

Reference 11

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Observation d0e4c450-d6bd-4db4-8bc0-0357effb1271 · outbound

This paper cites Experimental evaluation of medium-voltage cascode gallium nitride (gan) devices for bidirectional dc-dc converters,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Experimental evaluation of medium-voltage cascode gallium nitride (gan) devices for bidirectional dc-dc converters,

Reference 12

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:578e5f45bb0be492024a96c6edc77e1709e5f0b1392b8097761601923a94c6bf

Observation a7de01ea-9d55-4d1c-8968-eb7784a12aac · outbound

This paper cites Gan power transistors in converter design techniques,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gan power transistors in converter design techniques,

Reference 13

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Observation aa9a15a9-406d-46a5-8c2b-d8b4eab92ad2 · outbound

This paper cites Fundamental research on semiconductor sic and its applications to power electronics,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Fundamental research on semiconductor sic and its applications to power electronics,

Reference 14

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:8af25bc863870704330ebf4692fc6a7f6c626bca4a06342c5d7e2a91f8023141

Observation d69dfbea-7879-4a00-85fa-d94afafb587c · outbound

This paper cites Sic semiconductor devices technology, modeling and simulation,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Sic semiconductor devices technology, modeling and simulation,

Reference 15

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:da44c7d1b3116f7f10c4bf38588c95f95bccb328f9b034701405ced19114347b

Observation 931b4121-458d-4526-aeaa-d6124077e3bd · outbound

This paper cites Challenges in sic power mosfet design,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Challenges in sic power mosfet design,

Reference 16

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:3ea9c868724d02e7ba4aaa93bf7725ec9774e87f0beefeab2b21d751c354568a

Observation b7c3696f-1b64-4256-bd70-97fc42280f75 · outbound

This paper cites Applicability analysis of high-voltage transmission and substation equipment based on silicon carbide devices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Applicability analysis of high-voltage transmission and substation equipment based on silicon carbide devices,

Reference 17

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Observation 3bc6c83d-2140-4591-8f1b-fa81d92dd395 · outbound

This paper cites New fom- based performance evaluation of 600/650 v sic and gan semiconductors for next-generation ev drives,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways New fom- based performance evaluation of 600/650 v sic and gan semiconductors for next-generation ev drives,

Reference 18

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Observation 08045619-a3b1-458b-ac6c-030773b03e85 · outbound

This paper cites Study on the grinding mechanism of single-crystal gan based on atomic scale and stress field modeling,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Study on the grinding mechanism of single-crystal gan based on atomic scale and stress field modeling,

Reference 19

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Observation 84627805-e986-417a-bd8b-e7788c1bda3d · outbound

This paper cites Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Power electronics revolutionized: A comprehensive analysis of emerging wide and ultrawide bandgap devices,

Reference 20

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Observation 105786a4-11aa-407a-92e3-25fbb7958740 · outbound

This paper cites Status and prospects of wide bandgap semiconductor devices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Status and prospects of wide bandgap semiconductor devices,

Reference 21

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:8e9bb0ab85d24efe647627acf8fcde97ef5321d8578d9a0e1fb5b34cb8bda640

Observation e43f2733-3906-4279-82b5-d986f8105dc9 · outbound

This paper cites Reliability, applications and challenges of gan hemt technology for modern power devices: A review,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Reliability, applications and challenges of gan hemt technology for modern power devices: A review,

Reference 22

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Observation 3bbc2d41-fe66-41d3-9f6a-99a84f9d115e · outbound

This paper cites Review of gan hemt appli- cations in power converters over 500 w,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Review of gan hemt appli- cations in power converters over 500 w,

Reference 23

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Observation 94fc536a-31ab-4654-b193-d18858280b3e · outbound

This paper cites A deep dive into sic and gan power devices: Advances and prospects,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways A deep dive into sic and gan power devices: Advances and prospects,

Reference 24

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Observation 0686aeee-4aea-47b1-8c0c-85e96807e01a · outbound

This paper cites Advancing gan power ics: Efficiency, relia- bility & autonomy,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Advancing gan power ics: Efficiency, relia- bility & autonomy,

Reference 25

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Observation 8b869488-9ca1-4057-9b29-c011c9a182fb · outbound

This paper cites Gallium nitride power devices: a state of the art review,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gallium nitride power devices: a state of the art review,

Reference 26

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:7b573c8587f5bcc5df9a1c2ea1fe618cc08cd2ba7a4c235e7e41e6f571ac8c61

Observation bcc98e86-d2c3-425e-a006-a53a33889afb · outbound

This paper cites Comments: Grabbing the brass ring to power the demand for data centers and generative ai,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Comments: Grabbing the brass ring to power the demand for data centers and generative ai,

Reference 27

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:be5fdfd5901e6984f21ce9452c106e592e0e27d54bde197234e7e19a5e9db859

Observation ef9997f7-674f-400a-97cf-d78bfc5fbd8f · outbound

This paper cites Enhancing energy efficiency in ai-powered data centers: Challenges and solutions,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Enhancing energy efficiency in ai-powered data centers: Challenges and solutions,

Reference 28

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:89c3aaac1ef6f128bca0acf505ca78f6ce308afa01946fc05ab44846b0457851

Observation bd69d97e-73a8-45a8-9eea-aa2560687e3e · outbound

This paper cites Piezotronic effect in a normally off p-gan/algan/gan hemt toward highly sensitive pressure sensor,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Piezotronic effect in a normally off p-gan/algan/gan hemt toward highly sensitive pressure sensor,

Reference 29

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:fb214832359cce5e1d2ff7dbb253102ff0cd9870774f3500697e904688a30cbf

Observation d0c55d8c-0d4c-4636-96d9-ba8944fe4831 · outbound

This paper cites Ridge-channel algan/gan normally- off high-electron mobility transistor based on epitaxial lateral overgrowth,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Ridge-channel algan/gan normally- off high-electron mobility transistor based on epitaxial lateral overgrowth,

Reference 30

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:427d5b6d5cc4365b8a58403c6670e8c3ce6dac9950eecf734bd45291b2a9e9f3

Observation 1db21dfa-f906-4047-afc9-71709dc44338 · outbound

This paper cites Research on a high-threshold-voltage algan/gan hemt with p-gan cap and recessed gate in combination with graded algan barrier layer: Z. chen et al.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Research on a high-threshold-voltage algan/gan hemt with p-gan cap and recessed gate in combination with graded algan barrier layer: Z. chen et al

Reference 31

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Observation 198c739c-bedc-45a6-b4e7-03950a1d321b · outbound

This paper cites Charging effect by fluorine-treatment and recess gate for enhancement-mode on algan/gan high electron mobility transistors,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Charging effect by fluorine-treatment and recess gate for enhancement-mode on algan/gan high electron mobility transistors,

Reference 32

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:03c403d66a5ffd420ebad54bb5a0198184e0c98c212a877be6084c7648e9546a

Observation 62040e1a-d82a-44e6-9f40-76e87394c585 · outbound

This paper cites 1.3 kv vertical gan-based trench mosfets on 4-inch free standing gan wafer,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways 1.3 kv vertical gan-based trench mosfets on 4-inch free standing gan wafer,

Reference 33

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:b465943e57a3e6d75942b4d2e4ab0fc3d9ac86b4ed987b72220105ee2a9b7488

Observation dd728b3f-3e67-44f9-8816-3070365eff34 · outbound

This paper cites 1.7-kv vertical gan pn diode with triple-zone graded junction termination extension formed by ion-implantation,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways 1.7-kv vertical gan pn diode with triple-zone graded junction termination extension formed by ion-implantation,

Reference 34

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:112dacfcc8a67d5eeb16adcfba6ad552ba2f0e6d9f4dc5b89708d25e19f40f5f

Observation cee02a7d-1d82-4b2c-867b-de7d76bbb198 · outbound

This paper cites Vertical gan trench-mosfets fabricated on ammonothermally grown bulk gan substrates,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Vertical gan trench-mosfets fabricated on ammonothermally grown bulk gan substrates,

Reference 35

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:1c6867a7c769f8f8b8f2d9eb14c85320a5caca945cf5d09f25fac5630ee4fb73

Observation a8671c17-8bda-4a85-9e5d-5c9facffc80a · outbound

This paper cites Low leakage fully-vertical gan-on-si power mosfets,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Low leakage fully-vertical gan-on-si power mosfets,

Reference 36

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:78cb055968f730ae0e00c0349929e0edfe4c4f8a6a56454ce5457c135cb7be3c

Observation fdfcde4e-8175-430e-82d1-23725f7ddab6 · outbound

This paper cites Review on main gate characteristics of p-type gan gate high-electron-mobility transistors,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Review on main gate characteristics of p-type gan gate high-electron-mobility transistors,

Reference 37

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:86996b5ab586f9473f6219bd8510b31ea73550d8fa72194fd11adc912d8f372a

Observation 1843ccf5-81ed-4bbb-b6e1-74da60988392 · outbound

This paper cites Stability, reliability, and robustness of gan power devices: A re- view,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Stability, reliability, and robustness of gan power devices: A re- view,

Reference 38

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:eceeea7766f95830fb4d905a074e83844155dc885c961398d3ed5411323914ff

Observation aa9af936-e355-4ed8-91ac-b3f54d70787e · outbound

This paper cites Review of isolated dc-dc converters for applications in data center power delivery,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Review of isolated dc-dc converters for applications in data center power delivery,

Reference 39

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:ae08bd3c61c431f8efb81e8ecd2f13842366d242522b31b2274617477a3b2282

Observation 4ed610a5-d463-4648-89ce-54bf7dd38021 · outbound

This paper cites Open rack v3 it gear 48v input connector, rev. 1.6,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Open rack v3 it gear 48v input connector, rev. 1.6,

Reference 40

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:17cf8121ab574be532f0fd742e3ad1de46562bed34137ec079236f960cf59c0f

Observation a117fdd0-bf34-43ac-bf1b-f36e27850f90 · outbound

This paper cites Ocp orv3 power solutions guide,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Ocp orv3 power solutions guide,

Reference 41

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:b59ece3c90929e76e07b6d22f6f5bd8d07aeec4d671d80eab51a558b696cd45b

Observation 86106582-6541-474d-9a1c-dfbf3bc1d54d · outbound

This paper cites A novel digital control strategy for gan-based interleaving crm totem- pole pfc,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways A novel digital control strategy for gan-based interleaving crm totem- pole pfc,

Reference 42

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:42518f018d8241cb90091c96c49c28600868adf3fb81985e73f030861e410395

Observation 01713ff3-4be6-4bc8-a288-922777a8db56 · outbound

This paper cites Gs-evb-btp-3kw-gs evaluation board technical documentation,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gs-evb-btp-3kw-gs evaluation board technical documentation,

Reference 43

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:81347df6e3b2e993fa6bb87196625a65e11f06e58f9defb50d24ec44a35d8ed9

Observation 5e14a820-b857-4b44-891c-6c06cb6fe7f5 · outbound

This paper cites Wide bandgap power conversion – part 3: Isop llc converter,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Wide bandgap power conversion – part 3: Isop llc converter,

Reference 44

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:44903db53bdc291540e0ed54b0a9c66bf400f0f601111aa8ab599b6ee7e48f49

Observation 556ee844-7c14-4cba-bbd7-1eb48a5345f9 · outbound

This paper cites Gan based high-density unregulated 48 v to x v llc converters with??? 98% efficiency for future data centers,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gan based high-density unregulated 48 v to x v llc converters with??? 98% efficiency for future data centers,

Reference 45

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:99ff4f23d58e7467544c08512823653505db0fee0ffbbd8318590edf33ada834

Observation 518b1c0e-6930-4f36-8383-f6a1781c09e5 · outbound

This paper cites Lego-pol: A 48v-1.5 v 300a merged-two-stage hybrid converter for ultra-high-current microprocessors,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Lego-pol: A 48v-1.5 v 300a merged-two-stage hybrid converter for ultra-high-current microprocessors,

Reference 46

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:17524115646d92e47c79be0c0c31f74a3d3e6c8a9371df8be667d19c317431a9

Observation 24bf320f-92af-4d02-8fee-744c8e8313fb · outbound

This paper cites 2024 united states data center energy usage report,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways 2024 united states data center energy usage report,

Reference 47

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:d436ad0ac4e6ea8171f39ff27608b710adab835d33a5845a21e033f06c351c84

Observation 8b16f369-12ee-4b12-9104-214ee47316dc · outbound

This paper cites Uptime institute global data center survey 2024,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Uptime institute global data center survey 2024,

Reference 48

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:3a7fceee15741c684bc4766614f3ddb99dd17d55be7d66648dfea38b89954e39

Observation c20cccf0-8ffe-4b64-903f-1747abfeab9f · outbound

This paper cites Data Center Power Equipment Thermal Guidelines and Best Practices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Data Center Power Equipment Thermal Guidelines and Best Practices,

Reference 49

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:4c514b963726a550e3d013cdf814688ae63237320dfc152aa00490028b581a98

Observation 50d784ca-4efe-49f9-adf0-c3e28bcee788 · outbound

This paper cites Design of a gan totem-pole pfc converter using dc-link voltage control strategy for data center applications,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Design of a gan totem-pole pfc converter using dc-link voltage control strategy for data center applications,

Reference 50

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:36c82d6fa865a337dc822374fe811ea3603cdc3ea162e09d83639c48d2ccd0dd

Observation 92be90da-3e21-4e69-96a0-0a962c88b7f1 · outbound

This paper cites Current status and future trends of gan hemts in electrified transportation,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Current status and future trends of gan hemts in electrified transportation,

Reference 51

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:e8c999c0350e15ff0d9d14c9f0f6c177a547bc886a2c49a6ae140e565030f3ee

Observation 3e6a41c1-fb58-4b8a-b2b3-f8295a8ce6fc · outbound

This paper cites Evaluation of gan power transistor switching performance on charac- teristics of bidirectional dc-dc converter,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Evaluation of gan power transistor switching performance on charac- teristics of bidirectional dc-dc converter,

Reference 52

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:9357fed4a1e008c86a3125c089fec343010f18b7b49aeeb72261c473c9b367ec

Observation ec948b53-3fd1-4a44-91c7-b939e65170bc · outbound

This paper cites Design and comparative analysis of an ultra-highly efficient, compact half-bridge llc resonant gan converter for low-power applications,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Design and comparative analysis of an ultra-highly efficient, compact half-bridge llc resonant gan converter for low-power applications,

Reference 53

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:9e1761aca0d9ee319a04ee3422737eaced14acf416a07437f7d257e25ce7f853

Observation aebac24f-713f-453b-a987-ce777f00dcca · outbound

This paper cites Review and outlook on gan and sic power devices: Industrial state-of-the-art, applications, and perspectives,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Review and outlook on gan and sic power devices: Industrial state-of-the-art, applications, and perspectives,

Reference 54

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:a32dda7b0d5131b4d31e6e6b7b1af4fa302180d25b7dafc6d4bb9d77c7d793fa

Observation fc1c18f2-7543-4e3c-8c42-406512a32ef9 · outbound

This paper cites Wide-bandgap semiconductors: a critical analysis of gan, sic, algan, diamond, and ga2o3 synthesis methods, challenges, and prospective technological innovations,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Wide-bandgap semiconductors: a critical analysis of gan, sic, algan, diamond, and ga2o3 synthesis methods, challenges, and prospective technological innovations,

Reference 55

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:17f63b0304f53756210145aa4bad46d52782c89a5f385e7d38f494cbd8c07060

Observation 40336713-5d17-4e6e-bca5-0d59ac5309e4 · outbound

This paper cites Optimal design of gan hemt based high efficiency llc converter,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Optimal design of gan hemt based high efficiency llc converter,

Reference 56

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:57d0f8cada427b94f82e88146d51380d767c8f14c03a48a3c8d87dee08b82079

Observation 18a0b811-327c-41a2-9768-ff34620bf16b · outbound

This paper cites Thermal management of wide-bandgap power semiconductors: Strategies and challenges in sic and gan power devices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Thermal management of wide-bandgap power semiconductors: Strategies and challenges in sic and gan power devices,

Reference 57

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:fa24f673697551584ebcdd8ac57104eec43704ccfa2d82dce32c9ec2a91e2449

Observation 0819d60b-6235-44e6-a91b-a25527ce6160 · outbound

This paper cites Cascode gan hemt gate driving analysis,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Cascode gan hemt gate driving analysis,

Reference 58

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:0d70aa891161d21aecfd688dee1e84cd5f552f6a6b23211f2450d3968b845b39

Observation 53bc61aa-027a-48a9-97e4-704b28edea15 · outbound

This paper cites Cmos active gate driver for closed-loop dv/dt control of gan transistors,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Cmos active gate driver for closed-loop dv/dt control of gan transistors,

Reference 59

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:7b6ce194eaf02f9a649ce872a53c95a5a6b79a80695edbf96e49e13e0a9a2167

Observation a0417688-29cf-47e9-b953-5725128c2091 · outbound

This paper cites Gan-based matrix converter design with output filters for motor friendly drive system,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gan-based matrix converter design with output filters for motor friendly drive system,

Reference 60

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:e3eb2e2bfd2fe3883af4124ce86f6166274378ad317a11a129155f0f05e81230

Observation bda9f922-c7e8-402b-ae9d-ad2c0cee337f · outbound

This paper cites Design and application of high-efficiency gallium nitride (gan)-based power electronic devices,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Design and application of high-efficiency gallium nitride (gan)-based power electronic devices,

Reference 61

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:5eb1f5b7166b571eeb6319ecdb6026b6289849f5673e71c2935155c3a4b18c8a

Observation 5727caba-06b8-4f2f-b0d1-5cb20be2ea8f · outbound

This paper cites (n.d.) Silicon wafers.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (n.d.) Silicon wafers

Reference 62

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:8b7faceff2b41098e7809d539629a7e9665f08fb2b11a1b7192025980b3febb8

Observation 2e6520c5-f2ae-48ed-a799-ac76c83aa66f · outbound

This paper cites (n.d.) Gallium nitride on silicon epitaxial wafers.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (n.d.) Gallium nitride on silicon epitaxial wafers

Reference 63

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:70dadd22a6ec99ef3c039302e6cb9fd9e7fec859313159143989375adaf776bb

Observation e0ae10c0-b5d7-42a6-bb7d-8244818da217 · outbound

This paper cites (n.d.) Rf gan substrate wafers for gan-on-si applications.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (n.d.) Rf gan substrate wafers for gan-on-si applications

Reference 64

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:f4aad5c85eecde1bfc16b89835a7462ee21d12a0cb166bceb0a5cc892dd826c0

Observation 07a485f1-f2c3-4d2b-ab83-032bc5d29713 · outbound

This paper cites (2025, Jul.) Navitas announces plans for 200mm gan production with psmc.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (2025, Jul.) Navitas announces plans for 200mm gan production with psmc

Reference 65

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:e40f9b0703de777bffc69f619ab2f9871f12b50fb57c95f7db388f176be91fb5

Observation 3a07024d-85f6-4595-a436-05d8411aa205 · outbound

This paper cites (2025, Sep.) X-fab now offers gan-on-si foundry services.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (2025, Sep.) X-fab now offers gan-on-si foundry services

Reference 66

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:a38f617034bf51b39b6dd912dbad3ab17223fcf69e966359fb1df610f5fa975b

Observation 17e804ef-5196-401e-9ac9-3c47350125c0 · outbound

This paper cites (n.d.) Gallium nitride (gan) technology.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (n.d.) Gallium nitride (gan) technology

Reference 67

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:c17ffb1b0eea05047ba154e8dd5620f2625cdc9f78ed3ceba88766da2471bb16

Observation a8eaa49e-86da-4ee6-a4d8-3f2dd317f0dc · outbound

This paper cites (2024, Sep.) Infineon pioneers world’s first 300 mm power gallium nitride (gan) technology.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (2024, Sep.) Infineon pioneers world’s first 300 mm power gallium nitride (gan) technology

Reference 68

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:7317ceae6cb632f213d65c3d2f803724816d2cb582e61c2c32e329b35e317197

Observation 1a1a0763-1fa8-4504-af9e-28f3949d1c11 · outbound

This paper cites Gs66508t: 650 v enhancement mode gan transistor datasheet, rev. 200402,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gs66508t: 650 v enhancement mode gan transistor datasheet, rev. 200402,

Reference 69

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:f1ae2b226f8df3c8812fa5fc5537cb02bec5804ffc8a5f2c15a0b7b6b44d273e

Observation 20ccdea0-5e2e-42a7-8927-6fc1a20d16cb · outbound

This paper cites Silicon carbide (sic) materials,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Silicon carbide (sic) materials,

Reference 70

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:e056d9402fbe603db43895dd47cff882da5b5b591b983ee0a2060279a4e18f99

Observation 5d3e4f8f-e3b3-4584-ac82-e8989e5751d7 · outbound

This paper cites Available: https://www.coherent.com/ resources/datasheet/materials/sic-materials-ds.pdf.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Available: https://www.coherent.com/ resources/datasheet/materials/sic-materials-ds.pdf

Reference 71

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:563712798a7d008570562fa20c3f4f81b716beffa46f18e9ca860ce7d103e4a9

Observation 393eb8d6-72b8-4416-b60a-e6e4cf95f279 · outbound

This paper cites (2025) Sic raw materials see a price increase while 6-inch substrate kicks off a price war.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (2025) Sic raw materials see a price increase while 6-inch substrate kicks off a price war

Reference 72

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:ee1af62b1cd9ffb4fc375be24489c0ce858b7c93a390c24fd9925a15023853d0

Observation ba8727df-762c-46b1-9d96-f451dfe06962 · outbound

This paper cites (n.d.) Silicon carbide: The facts.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (n.d.) Silicon carbide: The facts

Reference 73

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:c84d411463c2b82a73f45ca6d09bf47d0e62d3701fe66f35ccb48fd40a6d6d38

Observation ccb05a0a-9adf-4194-9f13-c874c66d5019 · outbound

This paper cites (2025) Silicon carbide (sic) wafer market size, share and trend analysis, forecast 2025–2032.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (2025) Silicon carbide (sic) wafer market size, share and trend analysis, forecast 2025–2032

Reference 74

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:b4bf9a90ce2661d4f367f260edcd5b25d72c1a0e27cb606205d21cc181b06480

Observation ed81b9d8-3683-491e-84ab-c97c61f2605e · outbound

This paper cites Development of non-core 4-inch gan substrate,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Development of non-core 4-inch gan substrate,

Reference 75

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:d689656f542ac81596492d8c6373c865f54e24eac8fbe71b6cfe46ddf96dfccc

Observation 3dffd986-f4ee-4932-8eeb-abdafebfabfc · outbound

This paper cites Bulk gallium nitride (gan) wafers for research and production,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Bulk gallium nitride (gan) wafers for research and production,

Reference 76

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:586f823a47f1d2e072da84c49caeb58273c1349b9e66e98c2f83ac04c6e5d78b

Observation 588f2fc2-78a1-4cd4-8675-027da424a5fe · outbound

This paper cites 4 inch research grade 0.4 mm free standing gan wafer for semiconductors,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways 4 inch research grade 0.4 mm free standing gan wafer for semiconductors,

Reference 77

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:277231efff5b5e55f41f6bf411e09aa8a6b9e2ec61044b8792e5eb9004cc5413

Observation 3a154b93-fc26-4c73-85ec-4d793e808d9a · outbound

This paper cites Bulk gan substrate market growing at 10% cagr to $100m in 2022, from 60,000 wafers in 2016,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Bulk gan substrate market growing at 10% cagr to $100m in 2022, from 60,000 wafers in 2016,

Reference 78

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no resolver link, observed 2026-06-25T19:51:53.986302Z

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:faf5df0d5f9c4492bd52380289541d2c8ffb68a7f5c14312e31cfc3c63c6f4d4

Observation a4a034cd-d2b8-450f-bbae-ada8aa492073 · outbound

This paper cites Gallium nitride substrate costs to plummet by 60 percent,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gallium nitride substrate costs to plummet by 60 percent,

Reference 79

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no resolver link, observed 2026-06-25T19:51:53.986302Z

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:f6cdec96d7aa49ef04666e515ff6a50ccdc69ff58a2b9910a65dec6d178ff635

Observation 2eeb18a1-22ed-41b1-87ab-c12473dd2a99 · outbound

This paper cites Gallium,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gallium,

Reference 80

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no resolver link, observed 2026-06-25T19:51:53.986302Z

Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:c426dfe333ba835168906332bb06d67a1cd4400b24b0ea75155ff606c8aa21bf

Observation 338e949c-379a-49b4-8921-dbe6897a7215 · outbound

This paper cites Gallium,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gallium,

Reference 81

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no resolver link, observed 2026-06-25T19:51:53.986302Z

Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:adc6abe5061aadc55057c7ea41b7ed1db8237c90af13dc1de53a2259c4a49c20

Observation 21e7931e-bac2-4130-8a19-1d25d18c8ef4 · outbound

This paper cites The mineral industry of china,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways The mineral industry of china,

Reference 82

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:504f2716fa24bf2ba048e6e6441b0c489f8a0d4765ec7aaef04c7bf74d1b77f5

Observation ccd7cba6-7679-41b4-a66b-a614cdf5cd48 · outbound

This paper cites Material compatibility,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Material compatibility,

Reference 83

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:f3bd765c542260c7e35c8dcff5e8b277d952c8639e53c9abaf9de889d864a9c3

Observation 4f86e3b1-2854-41e5-a1ed-3664e74cd5fd · outbound

This paper cites High precision, high durability, low cost bead dishes,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways High precision, high durability, low cost bead dishes,

Reference 84

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no resolver link, observed 2026-06-25T19:51:53.986302Z

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:fe08531dc4140aac0fad3da915b37ba279e455d2c26c97bdeb27040e38ff3d1a

Observation 538c4970-62f5-4d0e-9cac-e7e881724d3c · outbound

This paper cites The great debate: Copper vs. gold ball bonding,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways The great debate: Copper vs. gold ball bonding,

Reference 85

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:8eaa50936eedf889d2051f0a45126fd1023360e503105fb9484353f49b5ac1cd

Observation bbeaaf20-f847-4474-a8d2-e4dbd324153a · outbound

This paper cites Gallium nitride transistor packaging advances and thermal modeling,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Gallium nitride transistor packaging advances and thermal modeling,

Reference 86

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no resolver link, observed 2026-06-25T19:51:53.986302Z

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:4206ef288685c17ecf5ee0f66b720001263ff84065cbe130f0ab289973f6a718

Observation 6be3e29e-3d7e-42e6-aece-8c10edd658b2 · outbound

This paper cites Effectively paralleling enhancement mode gallium nitride transistors for high current and high frequency applications,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Effectively paralleling enhancement mode gallium nitride transistors for high current and high frequency applications,

Reference 87

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:4d6effdc79702489c93c907cf137f270d0b319dd76f8b106de9a8dec82f63ba2

Observation 265779f9-df54-49c2-9f12-2ff38d093c82 · outbound

This paper cites Lmg3522r030-q1 650-v 30-m ω gan fet with integrated driver, protection, and temperature reporting,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Lmg3522r030-q1 650-v 30-m ω gan fet with integrated driver, protection, and temperature reporting,

Reference 88

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no resolver link, observed 2026-06-25T19:51:53.986302Z

Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:9cf5d6712d2508241ff6a5853562c612741a78b8bdabf3be1563a7458b5fb84e

Observation 69990c40-38ec-49d0-ae74-0bebc185b49b · outbound

This paper cites Igt65r055d2 coolgan™ g5 650 v enhancement-mode power transistor,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Igt65r055d2 coolgan™ g5 650 v enhancement-mode power transistor,

Reference 89

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no resolver link, observed 2026-06-25T19:51:53.986302Z

Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:42537e615670932e3c36719d88f66346c10ae242a91626ac96a7d364170aec1b

Observation 11a2be38-6fa8-417b-a8f6-3337b8ed4ba6 · outbound

This paper cites Die attach materials for power electronics in electric vehicles 2020–2030,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Die attach materials for power electronics in electric vehicles 2020–2030,

Reference 90

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:d493aadd17b9233b83cfa5f44c5387bd69a0d34dcf55537b22d525fb9690f920

Observation 1e804493-1816-48ee-816f-57b01459cdb0 · outbound

This paper cites (2026) Innoscience gan products break into google’s supply chain.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways (2026) Innoscience gan products break into google’s supply chain

Reference 91

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:1cf42ad7e8514ec64cd487afd0c3812c77eb208f6fd8bfd672d6ba34805b93d8

Observation 180baf31-6b28-411c-9abb-07668551702e · outbound

This paper cites Achieving gan products with lifetime reliability,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Achieving gan products with lifetime reliability,

Reference 92

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:a208c6ae99cb6755d508534770de17df7f8a061cd08352a04dba94d0f8c24178

Observation 5288b99d-b753-4373-99aa-eca614a677d8 · outbound

This paper cites Silicon heatwave: The looming change in data center climates,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Silicon heatwave: The looming change in data center climates,

Reference 93

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:1a98d6f4804708cd4a4618d3afacf2d636cc95df3b3ffa2831049a3e26be258c

Observation 8b6ee59a-d5e6-447e-918c-180b6741565f · outbound

This paper cites an unresolved cited work.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Unresolved cited work

Reference 94

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:0947153b11c1ddca3a0904b24ff8bd993532df149d4c73fc1e057d37263be7ad

Observation 1fe351ca-d63c-48db-9e54-71d533a788f7 · outbound

This paper cites Statistical interpretation of life test: Comparison between mil and jedec requirements,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Statistical interpretation of life test: Comparison between mil and jedec requirements,

Reference 95

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:2fb4e77e35ef03ecf0f9e90a14e7fd2eeef6aed66e4f87feaaaec93ebc12abc8

Observation e79d6b99-0abf-4775-950e-556538af045d · outbound

This paper cites Available: https://nepp.nasa.gov/docs/etw/ 2023/15-JUN-THU/1000_Chen_20230009005.pdf.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Available: https://nepp.nasa.gov/docs/etw/ 2023/15-JUN-THU/1000_Chen_20230009005.pdf

Reference 96

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:a27346b99667a9b6f9b5130fbedea969b6b429451464b8d4256d205d34743387

Observation cd329d78-9def-4ce9-859d-e877f8984b29 · outbound

This paper cites Automotive electronics reliability testing starts and ends with the mission profile,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Automotive electronics reliability testing starts and ends with the mission profile,

Reference 97

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:e832bf88d634096c233d2fa0afc425bc08c8fb04125688f42da910dd79e686b7

Observation a954d236-dff8-4f80-a23d-3379dd6b768c · outbound

This paper cites Search for new particles at the ILC.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Search for new particles at the ILC

Reference 98

Resolution
verified exact
arxiv_id, observed 2026-07-04T20:40:08.152969Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-09T06:31:02.800959+00:00.

source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:7f184ce2ea11d765499f85f6df943d7b4293aa0964edb790b9bdcd5910d2d576

Observation e871bb87-628a-46f5-b712-2c750f3df44a · outbound

This paper cites Development of gan hemts fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Development of gan hemts fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration,

Reference 99

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:4f78bf5e74170b9e6443bd362d8dac3213a3857bf46a17e3b639ee8b33c6bddf

Observation f648c0d7-acb3-4009-9e5b-03c0cf74f873 · outbound

This paper cites Sic and gan devices–wide bandgap is not all the same,.

GaN Power Devices and Converter Architectures for AI Data Centers: Efficiency, Reliability, and Deployment Pathways Sic and gan devices–wide bandgap is not all the same,

Reference 100

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Source-reported events for the cited work

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source=pdf_text observed=2026-06-25T19:51:53.986302Z digest=sha256:389f962d0cc9bf8cc71eb0fb5caf5a6ec7caee4ed6647996f601672a9d79e9cb

Pith citing papers

No inbound Pith citation observations are available.