Pressure tuning of localization and superconductivity in LaOPbBiS₃ and La₂O₂Bi₃AgS₆

We report the effect of pressure on the electrical transport properties of the four-layer-type bismuth chalcogenide semiconductors LaOPbBiS$_{3}$ and La$_{2}$O$_{2}$Bi$_{3}$AgS$_{6}$ and present the discovery of a pressure-induced superconductivity. In both compounds, the semiconductorlike behavior concomitant with an anomaly in the more insulating state is gradually suppressed with increasing pressure while the superconductivity develops. The obtained phase diagrams, in sharp contrast with the interplay between the conventional charge density waves and superconductivity, suggest that the enhancement of the superconductivity is due to the disorder near the localization threshold. These results indicate that pressure tuning of the local disorder in four-layer-type bismuth chalcogenides provides an attractive opportunity to study the interplay between disorder and superconductivity.