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Integrity report for Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with gt10¹⁵/cm³ free carrier concentration using close-coupled showerhead MOCVD reactor

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arXiv:2407.10342 · pith:2024:IPQLCLRPNM4WWCGNFEHSBPZ2JX

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