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Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

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arxiv 2312.02302 v1 pith:K4IYBUKW submitted 2023-12-04 cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-phphysics.chem-ph

Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

classification cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-phphysics.chem-ph
keywords organicdeviceoletspolyurethanetransistorsdevicesdielectriclight-emitting
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLETs implementation. This work reports on the improvements obtained by using polyurethane films as dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation.

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