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Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array

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arxiv 2507.11918 v2 pith:L7WBQU4E submitted 2025-07-16 quant-ph cond-mat.mes-hall

Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array

classification quant-ph cond-mat.mes-hall
keywords spinfidelitiesqubitssiliconcontroloperationsimultaneousduring
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Silicon spin qubits offer a promising path to scalable quantum computing due to their compatibility with industrial semiconductor manufacturing and recent advances in multi-qubit integration. A key requirement for scaling quantum processors is the ability to perform high-fidelity operations in parallel across many qubits. In silicon spin systems, however, simultaneous control remains a major challenge, as fidelities typically degrade under parallel operation. In a five-qubit silicon spin array, we identify microwave-drive-induced AC Stark shifts as the dominant source of this degradation. We address this by introducing a scalable mitigation protocol based solely on pairwise phase calibrations. Using tailored control pulses on a shared control line, we achieve primitive $\pi/2$ gate fidelities well above 99.99% for each qubit individually, with some approaching 99.999%, surpassing previously reported fidelities in silicon spin qubits. Crucially, these fidelities are preserved above 99.99% during simultaneous operation of up to three qubits. During parallel five-qubit operation, fidelities remain at the practical fault-tolerant threshold of 99.9%, with the loss attributed to drive-induced decoherence resulting from increased microwave power. This effect can be mitigated through device-level improvements. By demonstrating that high-fidelity control is maintained during simultaneous operation, we overcome a central challenge in silicon spin qubits and highlight the potential of shared qubit-control lines for scaling.

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Cited by 13 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

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    quant-ph 2025-09 unverdicted novelty 7.0

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    physics.app-ph 2026-05 unverdicted novelty 5.0

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    DAPS resolves valley splittings down to ~86 μeV at ~700 mK while PGS is limited to ~210 μeV by Fermi-sea thermal broadening.

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    cond-mat.mes-hall 2026-03 unverdicted novelty 4.0

    Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.

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  13. Theory of spin qubits and the path to scalability

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