Pressure induced Superconductivity and location of Fermi energy at Dirac point in BiSbTe3

Eike F. Schwier; Kenya Shimada; Labanya Ghosh; Mahima Singh; Prashant Shahi; Sandip Chatterjee; Shiv Kumar; Swapnil Patil; Vinod K. Gangwar; Yoshiya Uwatoko

arxiv: 1906.10336 · v1 · pith:XUVNMZQPnew · submitted 2019-06-25 · ❄️ cond-mat.supr-con

Pressure induced Superconductivity and location of Fermi energy at Dirac point in BiSbTe3

Vinod K. Gangwar , Shiv Kumar , Mahima Singh , Labanya Ghosh , Zhang Yufeng , Prashant Shahi , Swapnil Patil , Eike F. Schwier

show 3 more authors

Kenya Shimada Yoshiya Uwatoko Sandip Chatterjee

This is my paper

Pith reviewed 2026-05-25 16:25 UTC · model grok-4.3

classification ❄️ cond-mat.supr-con

keywords BiSbTe3superconductivitypressureDirac pointtopological insulatorARPESSeebeck coefficientFermi level

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The pith

BiSbTe3 develops superconductivity under pressure starting at 8 GPa with Tc rising to 3.3 K at 14 GPa while the Dirac point sits exactly at the Fermi level.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that single crystals of the three-dimensional topological insulator BiSbTe3 show superconductivity when pressure exceeds 8 GPa, with the critical temperature beginning near 2.5 K and reaching a peak of 3.3 K at 14 GPa. Laser ARPES data place the Dirac point of the surface states precisely at the Fermi energy, and positive Seebeck and Hall coefficients confirm p-type bulk conduction. A sympathetic reader would care because the work ties pressure-tuned superconductivity directly to a topological surface state whose Dirac point aligns with the Fermi level, offering a concrete material system in which these features coexist.

Core claim

Single-crystal BiSbTe3 exhibits superconductivity that emerges at 8 GPa with Tc approximately 2.5 K and rises to a maximum of 3.3 K at 14 GPa. Laser-based ARPES measurements reveal a Dirac-cone-like metallic surface state whose Dirac point lies exactly at the Fermi level. Thermoelectric and Hall data establish the p-type character of the material.

What carries the argument

Pressure-dependent resistance measurements that track the superconducting transition, combined with ARPES mapping that fixes the Dirac point position relative to the Fermi energy.

Load-bearing premise

The resistance drop observed under pressure arises from intrinsic superconductivity in the original crystal structure rather than from pressure-induced structural changes or sample degradation.

What would settle it

X-ray diffraction showing a structural phase transition at 8 GPa that exactly coincides with the onset of the resistance drop would indicate the superconductivity may not be intrinsic to the measured phase.

Figures

Figures reproduced from arXiv: 1906.10336 by Eike F. Schwier, Kenya Shimada, Labanya Ghosh, Mahima Singh, Prashant Shahi, Sandip Chatterjee, Shiv Kumar, Swapnil Patil, Vinod K. Gangwar, Yoshiya Uwatoko, Zhang Yufeng.

read the original abstract

We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface state in BiSbTe3 with a Dirac Point situated exactly at the Fermi level. Additionally, superconductivity emerges under pressure of 8 GPa with a critical temperature of ~2.5 K. With further increase of pressure, the superconducting transition temperature (Tc) increases and at 14 GPa it shows the maximum Tc (~3.3 K).

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

BiSbTe3 shows SC onset at 8 GPa with Tc up to 3.3 K and ARPES placing the Dirac point at EF, but the writeup is thin on methods and controls.

read the letter

The main result here is the pressure-induced superconductivity in BiSbTe3, with the transition starting at 8 GPa (Tc ~2.5 K) and reaching a maximum of ~3.3 K at 14 GPa, plus laser ARPES data showing the Dirac point right at the Fermi level. They also confirm p-type behavior through positive Seebeck coefficient and Hall measurements on their single crystals. That combination of bulk transport under pressure and surface-state mapping is what the paper delivers. The specific numbers for this composition count as new measurements, extending earlier work on related Bi-based topological insulators. The ARPES confirmation of the Dirac cone with the point at EF lines up with the p-type character from transport, which is a useful consistency check. The paper does a reasonable job of pulling together crystal growth, thermoelectric data, and high-pressure magneto-transport on the same material. On the soft side, the abstract supplies the Tc values and pressure points without error bars, raw resistance curves, or any description of the pressure medium, calibration, or hydrostaticity. There is also no discussion of possible structural phase changes under pressure, which is a standard concern in these systems and could affect the interpretation. From the text given, the claims rest on straightforward observations rather than any derivation or fitting that could introduce circularity. This is the kind of incremental experimental report that matters inside the topological materials subfield. A reader tracking pressure effects on 3D TIs would get concrete data points from it, but it does not resolve any long-standing question. I would bring it to a reading group if the group is covering experimental TI papers. I would not cite it in my own work unless compiling a review on pressure-tuned superconductivity in these compounds. It deserves peer review because the experiments are standard and the claims are falsifiable with the usual techniques; the referee can check the missing details on methods and data quality.

Referee Report

2 major / 2 minor

Summary. The manuscript reports single-crystal growth of the 3D topological insulator BiSbTe3 together with thermoelectric, Hall, ARPES, and high-pressure magneto-transport measurements. It claims p-type conduction from positive Seebeck coefficient and Hall data, a Dirac-cone surface state with the Dirac point located exactly at the Fermi level, and pressure-induced superconductivity that onsets at 8 GPa (Tc ≈ 2.5 K) and reaches a maximum Tc ≈ 3.3 K at 14 GPa.

Significance. If the superconductivity is intrinsic to the bulk and the ARPES assignment of the Dirac point is robust, the combination of a pressure-tunable superconductor with EF exactly at the Dirac point would be of interest for topological-superconductivity studies. The work is otherwise incremental within the existing literature on pressurized topological insulators.

major comments (2)

[Abstract/Results] Abstract and Results: the superconductivity claims give Tc values (~2.5 K at 8 GPa, ~3.3 K at 14 GPa) without error bars, without reference to raw R(T) or dR/dT curves, and without any description of the pressure-transmitting medium, pressure calibration, or checks for hydrostaticity or pressure-induced structural transitions; these omissions are load-bearing for the central claim that superconductivity emerges at 8 GPa and evolves with pressure.
[ARPES] ARPES section: the assertion that the Dirac point lies exactly at the Fermi level is stated without quantitative fitting, momentum-distribution-curve analysis, or explicit discussion of possible surface contamination, charging, or photon-energy dependence that could shift the apparent crossing; this directly supports the highlighted claim that EF coincides with the Dirac point.

minor comments (2)

[Methods] The manuscript should include a dedicated Experimental Methods section with full details on crystal growth, sample mounting for high-pressure cells, and ARPES measurement conditions to allow reproducibility.
[Figures] Figure captions and text should consistently report units and uncertainties for all transport and spectroscopic quantities.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the detailed and constructive report. We address each major comment below, indicating the revisions that will be made to strengthen the manuscript.

read point-by-point responses

Referee: [Abstract/Results] Abstract and Results: the superconductivity claims give Tc values (~2.5 K at 8 GPa, ~3.3 K at 14 GPa) without error bars, without reference to raw R(T) or dR/dT curves, and without any description of the pressure-transmitting medium, pressure calibration, or checks for hydrostaticity or pressure-induced structural transitions; these omissions are load-bearing for the central claim that superconductivity emerges at 8 GPa and evolves with pressure.

Authors: We agree that the presentation of the high-pressure data requires additional detail to support the claims. In the revised manuscript we will add error bars on the reported Tc values (derived from the transition width in the raw R(T) data), explicitly reference the raw resistance-versus-temperature curves and their derivatives shown in the figures, specify the pressure-transmitting medium, describe the pressure-calibration procedure, and report checks for hydrostaticity. Our existing high-pressure X-ray diffraction data show no structural transitions up to 14 GPa; this information will be added to the text. These changes will be incorporated in the next version. revision: yes
Referee: [ARPES] ARPES section: the assertion that the Dirac point lies exactly at the Fermi level is stated without quantitative fitting, momentum-distribution-curve analysis, or explicit discussion of possible surface contamination, charging, or photon-energy dependence that could shift the apparent crossing; this directly supports the highlighted claim that EF coincides with the Dirac point.

Authors: We accept that a more quantitative analysis is needed. The revised manuscript will include momentum-distribution-curve (MDC) fitting at the Fermi energy together with energy-distribution-curve analysis to locate the Dirac-point binding energy. We will also add a brief discussion of photon-energy dependence (confirming the surface-state character) and note the sample-cleavage and ultra-high-vacuum conditions used to minimize surface contamination or charging effects. These additions will be made in the ARPES section. revision: yes

Circularity Check

0 steps flagged

No circularity: experimental observations only

full rationale

The paper reports crystal growth, structural characterization, thermoelectric and Hall measurements, pressure-dependent transport showing superconductivity onset at 8 GPa with Tc rising to 3.3 K at 14 GPa, and ARPES data locating the Dirac point at the Fermi level. No equations, derivations, fitted parameters, or self-citation chains are present that reduce any claimed result to the same data by construction. All central claims are direct experimental outputs, not predictions derived from inputs defined by those outputs. This matches the default non-circular case for measurement papers.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The central claims rest on the assumption that the grown crystals are phase-pure single crystals of the stated stoichiometry and that the ARPES and transport measurements accurately reflect bulk and surface properties without artifacts. No free parameters or invented entities are introduced; the work is purely observational.

axioms (2)

domain assumption The pressure applied in the cell is hydrostatic and does not trigger structural phase transitions that would alter the electronic structure independently of superconductivity.
Invoked implicitly when attributing the resistance drop solely to superconductivity.
domain assumption ARPES spectra are free of surface reconstruction, contamination, or charging effects that would shift the apparent Dirac-point energy.
Required for the claim that the Dirac point sits exactly at the Fermi level.

pith-pipeline@v0.9.0 · 5701 in / 1486 out tokens · 34128 ms · 2026-05-25T16:25:15.600542+00:00 · methodology

discussion (0)

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

IndisputableMonolith/Foundation/RealityFromDistinction.lean reality_from_one_distinction unclear

?

unclear
Relation between the paper passage and the cited Recognition theorem.

superconductivity emerges under pressure of 8 GPa with a critical temperature of ~2.5 K... at 14 GPa it shows the maximum Tc (~3.3 K). ... Dirac Point situated exactly at the Fermi level

What do these tags mean?

matches: The paper's claim is directly supported by a theorem in the formal canon.
supports: The theorem supports part of the paper's argument, but the paper may add assumptions or extra steps.
extends: The paper goes beyond the formal theorem; the theorem is a base layer rather than the whole result.
uses: The paper appears to rely on the theorem as machinery.
contradicts: The paper's claim conflicts with a theorem or certificate in the canon.
unclear: Pith found a possible connection, but the passage is too broad, indirect, or ambiguous to say the theorem truly supports the claim.

Reference graph

Works this paper leans on

35 extracted references · 35 canonical work pages

[1]

Hasan and C.L

M.Z. Hasan and C.L. Kane, Reviews of Modern Physics 82, 3045 (2010)

work page 2010
[2]

Chang, J

C.-Z. Chang, J. Zhang, X. Feng, J. Shen, Z. Zhang, M. Guo, K. Li, Y. Ou, P. Wei, L. -L. Wang, Z.-Q. Ji, Y. Feng, S. Ji, X. Chen, J. Jia, X. Dai, Z. Fang, S. -C. Zhang, K. He, Y. Wang, L. Lu, X.-C. Ma, and Q.-K. Xue, Science 340, 167 (2013)

work page 2013
[3]

Moore, Nature 464, 194 (2010)

J.E. Moore, Nature 464, 194 (2010)

work page 2010
[4]

Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y.S. Hor, R.J. Cava, and M.Z. Hasan, Nature Physics 5, 398 (2009)

work page 2009
[5]

Hsieh, Y

D. Hsieh, Y. Xia, D. Qian, L. Wray, J.H. Dil, F. Meier, J. Osterwalder, L. Patthey, J.G. Checkelsky, N.P. Ong, A.V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y.S. Hor, R.J. Cava, and M.Z. Hasan, Nature 460, 1101 (2009)

work page 2009
[6]

Zhang, C.-X

H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S. -C. Zhang, Nature Physics 5, 438 (2009)

work page 2009
[8]

Scanlon, P.D.C

D.O. Scanlon, P.D.C. King, R.P. Singh, A.D.L. Torre, S.M. Walker, G. Balakrishnan , F. Baumberger, and C.R.A. Catlow, Advanced Materials 24, 2154 (2012)

work page 2012
[9]

Lošťák, Z

P. Lošťák, Z. Starý, J. Horák, and J. Pancíř, Physica Status Solidi (a) 115, 87 (1989)

work page 1989
[10]

Hsieh, Y

D. Hsieh, Y. Xia, D. Qian, L. Wray, F. Meier, J.H. Dil, J. Osterwalder, L. Patthey, A.V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y.S. Hor, R.J. Cava, and M.Z. Hasan, Physical Review Letters 103, (2009)

work page 2009
[11]

D. Kong, Y. Chen, J.J. Cha, Q. Zhang, J.G. Analytis, K. Lai, Z. Liu, S.S. Hong, K.J. Koski, S. -K. Mo, Z. Hussain, I.R. Fisher, Z. -X. Shen, and Y. Cui, Nature Nanotechnology 6, 705 (2011)

work page 2011
[12]

Zhang, C

J. Zhang, C. -Z. Chang, Z. Zhang, J. Wen, X. Feng, K. Li, M. Liu, K. He, L. Wang, X. Chen, Q.-K. Xue, X. Ma, and Y. Wang, Nature Communications 2, (2011)

work page 2011
[13]

X. He, T. Guan, X. Wang, B. Feng, P. Cheng, L. Chen, Y. Li, an d K. Wu, Applied Physics Letters 101, 123111 (2012)

work page 2012
[14]

Zhang, S.J

J.L. Zhang, S.J. Zhang, H.M. Weng, W. Zhang, L.X. Yang, Liu, S.M. Feng, X.C. Wang, R.C. Yu, L.Z. Cao, L. Wang, W.G. Yang, H.Z. Liu, W.Y. Zhao, S.C. Zhang, X. Dai, Z. Fang, and C.Q. Jin, PNAS (2010)

work page 2010
[15]

Kong, J.L

P.P. Kong, J.L. Zhang, S.J. Zhang, J. Zhu, Q.Q. Liu, R.C. Yu, Z. Fang, C.Q. Jin, W.G. Yang, X.H. Yu, J.L. Zhu, and Y.S. Zhao, Journal of Physics: Condensed Matter 25, 362204 (2013)

work page 2013
[16]

Zhu, J.L

J. Zhu, J.L. Zhang, P.P. Kong, S.J. Zhang, X.H. Yu, J.L. Zhu, Q.Q. Liu, X. Li, R.C. Yu, R. Ahuja, W.G. Yang, G.Y. Shen, H.K. Mao, H.M. Weng, X. Dai, Z. Fang, Y.S. Zhao, and C.Q. Jin, Scientific Reports 3, (2013)

work page 2013
[17]

Wilczek, Nature Physics 5, 614 (2009)

F. Wilczek, Nature Physics 5, 614 (2009)

work page 2009
[18]

Nayak, S.H

C. Nayak, S.H. Simon, A. Stern, M. Freedman, and S.D. Sarma, Reviews of Modern Physics 80, 1083 (2008)

work page 2008
[19]

Jacobsen, R.S

M.K. Jacobsen, R.S. Kumar, A.L. Cornelius, S.V. Sinogeiken, M.F. Nico, M. Elert, M.D. Furnish, R. Chau, N. Holmes, and J. Nguyen, (2008)

work page 2008
[20]

Jacobsen, S

M. Jacobsen, S. Sinogeikin, R. Kumar, and A. Cornelius, Journal of Physics and Chemistry of Solids 73, 1154 (2012)

work page 2012
[21]

Singh, V.K

R. Singh, V.K. Gangwar, D.D. Daga, A. Singh, A.K. Ghosh, M. Kumar, A. Lakhani, R. Singh, and S. Chatterjee, Applied Physics Letters 112, 102401 (2018)

work page 2018
[22]

Weyrich, M

C. Weyrich, M. Drögeler, J. Kampmeier, M. Eschbach, G. Mussler, T. Merzenich, T. Stoica, I.E. Batov, J. Schubert, L. Plucinski, B. Beschoten, C.M. Schneider, C. Stampfer, D. Grützmacher, and T. Schäpers, Journal of Physics: Condensed Matter 28, 495501 (2016)

work page 2016
[23]

Mansour, W

A.N. Mansour, W. Wong -Ng, Q. Huang, W. Tang, A. Thompson, and J. Sharp, Journ al of Applied Physics 116, 083513 (2014)

work page 2014
[24]

Serrano-Sánchez, M

F. Serrano-Sánchez, M. Gharsallah, N.M. Nemes, N. Biskup, M. Varela, J.L. Martínez, M.T. Fernández-Díaz, and J.A. Alonso, Scientific Reports 7, (2017)

work page 2017
[25]

Zhang, L

C. Zhang, L. Sun, Z. Chen, X. Zhou, Q. Wu, W. Yi, J. Guo, X. D ong, and Z. Zhao, Physical Review B 83, (2011)

work page 2011
[26]

Z.H. Wang, L. Yang, X.J. Li, X.T. Zhao, H.L. Wang, Z.D. Zhang, and X.P.A. Gao, Nano Letters 14, 6510 (2014)

work page 2014
[27]

Huang, P.-C

S.-M. Huang, P.-C. Wang, C. Lin, S.-Y. You, W.-C. Lin, L.-J. Lin, Y.-J. Yan, S.-H. Yu, and M.C. Chou, Applied Physics Letters 112, 203103 (2018)

work page 2018
[28]

Parish and P.B

M.M. Parish and P.B. Littlewood, Nature 426, 162 (2003)

work page 2003
[29]

W. Liu, L. Endicott, V.A. Stoica, H. Chi, R. Clarke, and C. Uher, Journal of Crystal Growth 410, 23 (2015)

work page 2015
[30]

Kim, N.A

H.-S. Kim, N.A. Heinz, Z.M. Gibbs, Y. Tang, S.D. Kang, and G.J. Snyder, Materials Today 20, 452 (2017)

work page 2017
[31]

W. Xie, S. Wang, S. Zhu, J. He, X. Tang, Q. Zhang, and T.M. Tritt, Journal of Materials Science 48, 2745 (2012)

work page 2012
[32]

Chen, D.-W

C. Chen, D.-W. Liu, B.-P. Zhang, and J.-F. Li, Journal of Electronic Materials 40, 942 (2010)

work page 2010
[33]

Hu, T.-J

L.-P. Hu, T.-J. Zhu, Y.-G. Wang, H.-H. Xie, Z.-J. Xu, and X.-B. Zhao, NPG Asia Materials 6, (2014)

work page 2014
[34]

J.S. Dyck, B. Mao, J. Wang, S. Dorroh, and C. Burda, Journal of Electronic Materials 41, 1408 (2012)

work page 2012
[35]

Caillat, M

T. Caillat, M. Carle, P. Pierrat, H. Scherrer, and S. Scherrer, Journal of Physics and Chemistry of Solids 53, 1121 (1992)

work page 1992
[36]

Chen, J.G

Y.L. Chen, J.G. Analytis, J.-H. Chu, Z.K. Liu, S.-K. Mo, X.L. Qi, H.J. Zhang, D.H. Lu, X. Dai, Z. Fang, S.C. Zhang, I.R. Fisher, Z. Hussain, and Z.-X. Shen, Science 325, 178 (2009). Figure Captions: Fig.1. (a) Single crystal x -ray diffraction of BiSbT 3 cleaved along ( 00l) direction, Inset: Laue diffraction pattern (b) Le Bail refinement of powder XRD o...

work page 2009

[1] [1]

Hasan and C.L

M.Z. Hasan and C.L. Kane, Reviews of Modern Physics 82, 3045 (2010)

work page 2010

[2] [2]

Chang, J

C.-Z. Chang, J. Zhang, X. Feng, J. Shen, Z. Zhang, M. Guo, K. Li, Y. Ou, P. Wei, L. -L. Wang, Z.-Q. Ji, Y. Feng, S. Ji, X. Chen, J. Jia, X. Dai, Z. Fang, S. -C. Zhang, K. He, Y. Wang, L. Lu, X.-C. Ma, and Q.-K. Xue, Science 340, 167 (2013)

work page 2013

[3] [3]

Moore, Nature 464, 194 (2010)

J.E. Moore, Nature 464, 194 (2010)

work page 2010

[4] [4]

Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y.S. Hor, R.J. Cava, and M.Z. Hasan, Nature Physics 5, 398 (2009)

work page 2009

[5] [5]

Hsieh, Y

D. Hsieh, Y. Xia, D. Qian, L. Wray, J.H. Dil, F. Meier, J. Osterwalder, L. Patthey, J.G. Checkelsky, N.P. Ong, A.V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y.S. Hor, R.J. Cava, and M.Z. Hasan, Nature 460, 1101 (2009)

work page 2009

[6] [6]

Zhang, C.-X

H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S. -C. Zhang, Nature Physics 5, 438 (2009)

work page 2009

[7] [8]

Scanlon, P.D.C

D.O. Scanlon, P.D.C. King, R.P. Singh, A.D.L. Torre, S.M. Walker, G. Balakrishnan , F. Baumberger, and C.R.A. Catlow, Advanced Materials 24, 2154 (2012)

work page 2012

[8] [9]

Lošťák, Z

P. Lošťák, Z. Starý, J. Horák, and J. Pancíř, Physica Status Solidi (a) 115, 87 (1989)

work page 1989

[9] [10]

Hsieh, Y

D. Hsieh, Y. Xia, D. Qian, L. Wray, F. Meier, J.H. Dil, J. Osterwalder, L. Patthey, A.V. Fedorov, H. Lin, A. Bansil, D. Grauer, Y.S. Hor, R.J. Cava, and M.Z. Hasan, Physical Review Letters 103, (2009)

work page 2009

[10] [11]

D. Kong, Y. Chen, J.J. Cha, Q. Zhang, J.G. Analytis, K. Lai, Z. Liu, S.S. Hong, K.J. Koski, S. -K. Mo, Z. Hussain, I.R. Fisher, Z. -X. Shen, and Y. Cui, Nature Nanotechnology 6, 705 (2011)

work page 2011

[11] [12]

Zhang, C

J. Zhang, C. -Z. Chang, Z. Zhang, J. Wen, X. Feng, K. Li, M. Liu, K. He, L. Wang, X. Chen, Q.-K. Xue, X. Ma, and Y. Wang, Nature Communications 2, (2011)

work page 2011

[12] [13]

X. He, T. Guan, X. Wang, B. Feng, P. Cheng, L. Chen, Y. Li, an d K. Wu, Applied Physics Letters 101, 123111 (2012)

work page 2012

[13] [14]

Zhang, S.J

J.L. Zhang, S.J. Zhang, H.M. Weng, W. Zhang, L.X. Yang, Liu, S.M. Feng, X.C. Wang, R.C. Yu, L.Z. Cao, L. Wang, W.G. Yang, H.Z. Liu, W.Y. Zhao, S.C. Zhang, X. Dai, Z. Fang, and C.Q. Jin, PNAS (2010)

work page 2010

[14] [15]

Kong, J.L

P.P. Kong, J.L. Zhang, S.J. Zhang, J. Zhu, Q.Q. Liu, R.C. Yu, Z. Fang, C.Q. Jin, W.G. Yang, X.H. Yu, J.L. Zhu, and Y.S. Zhao, Journal of Physics: Condensed Matter 25, 362204 (2013)

work page 2013

[15] [16]

Zhu, J.L

J. Zhu, J.L. Zhang, P.P. Kong, S.J. Zhang, X.H. Yu, J.L. Zhu, Q.Q. Liu, X. Li, R.C. Yu, R. Ahuja, W.G. Yang, G.Y. Shen, H.K. Mao, H.M. Weng, X. Dai, Z. Fang, Y.S. Zhao, and C.Q. Jin, Scientific Reports 3, (2013)

work page 2013

[16] [17]

Wilczek, Nature Physics 5, 614 (2009)

F. Wilczek, Nature Physics 5, 614 (2009)

work page 2009

[17] [18]

Nayak, S.H

C. Nayak, S.H. Simon, A. Stern, M. Freedman, and S.D. Sarma, Reviews of Modern Physics 80, 1083 (2008)

work page 2008

[18] [19]

Jacobsen, R.S

M.K. Jacobsen, R.S. Kumar, A.L. Cornelius, S.V. Sinogeiken, M.F. Nico, M. Elert, M.D. Furnish, R. Chau, N. Holmes, and J. Nguyen, (2008)

work page 2008

[19] [20]

Jacobsen, S

M. Jacobsen, S. Sinogeikin, R. Kumar, and A. Cornelius, Journal of Physics and Chemistry of Solids 73, 1154 (2012)

work page 2012

[20] [21]

Singh, V.K

R. Singh, V.K. Gangwar, D.D. Daga, A. Singh, A.K. Ghosh, M. Kumar, A. Lakhani, R. Singh, and S. Chatterjee, Applied Physics Letters 112, 102401 (2018)

work page 2018

[21] [22]

Weyrich, M

C. Weyrich, M. Drögeler, J. Kampmeier, M. Eschbach, G. Mussler, T. Merzenich, T. Stoica, I.E. Batov, J. Schubert, L. Plucinski, B. Beschoten, C.M. Schneider, C. Stampfer, D. Grützmacher, and T. Schäpers, Journal of Physics: Condensed Matter 28, 495501 (2016)

work page 2016

[22] [23]

Mansour, W

A.N. Mansour, W. Wong -Ng, Q. Huang, W. Tang, A. Thompson, and J. Sharp, Journ al of Applied Physics 116, 083513 (2014)

work page 2014

[23] [24]

Serrano-Sánchez, M

F. Serrano-Sánchez, M. Gharsallah, N.M. Nemes, N. Biskup, M. Varela, J.L. Martínez, M.T. Fernández-Díaz, and J.A. Alonso, Scientific Reports 7, (2017)

work page 2017

[24] [25]

Zhang, L

C. Zhang, L. Sun, Z. Chen, X. Zhou, Q. Wu, W. Yi, J. Guo, X. D ong, and Z. Zhao, Physical Review B 83, (2011)

work page 2011

[25] [26]

Z.H. Wang, L. Yang, X.J. Li, X.T. Zhao, H.L. Wang, Z.D. Zhang, and X.P.A. Gao, Nano Letters 14, 6510 (2014)

work page 2014

[26] [27]

Huang, P.-C

S.-M. Huang, P.-C. Wang, C. Lin, S.-Y. You, W.-C. Lin, L.-J. Lin, Y.-J. Yan, S.-H. Yu, and M.C. Chou, Applied Physics Letters 112, 203103 (2018)

work page 2018

[27] [28]

Parish and P.B

M.M. Parish and P.B. Littlewood, Nature 426, 162 (2003)

work page 2003

[28] [29]

W. Liu, L. Endicott, V.A. Stoica, H. Chi, R. Clarke, and C. Uher, Journal of Crystal Growth 410, 23 (2015)

work page 2015

[29] [30]

Kim, N.A

H.-S. Kim, N.A. Heinz, Z.M. Gibbs, Y. Tang, S.D. Kang, and G.J. Snyder, Materials Today 20, 452 (2017)

work page 2017

[30] [31]

W. Xie, S. Wang, S. Zhu, J. He, X. Tang, Q. Zhang, and T.M. Tritt, Journal of Materials Science 48, 2745 (2012)

work page 2012

[31] [32]

Chen, D.-W

C. Chen, D.-W. Liu, B.-P. Zhang, and J.-F. Li, Journal of Electronic Materials 40, 942 (2010)

work page 2010

[32] [33]

Hu, T.-J

L.-P. Hu, T.-J. Zhu, Y.-G. Wang, H.-H. Xie, Z.-J. Xu, and X.-B. Zhao, NPG Asia Materials 6, (2014)

work page 2014

[33] [34]

J.S. Dyck, B. Mao, J. Wang, S. Dorroh, and C. Burda, Journal of Electronic Materials 41, 1408 (2012)

work page 2012

[34] [35]

Caillat, M

T. Caillat, M. Carle, P. Pierrat, H. Scherrer, and S. Scherrer, Journal of Physics and Chemistry of Solids 53, 1121 (1992)

work page 1992

[35] [36]

Chen, J.G

Y.L. Chen, J.G. Analytis, J.-H. Chu, Z.K. Liu, S.-K. Mo, X.L. Qi, H.J. Zhang, D.H. Lu, X. Dai, Z. Fang, S.C. Zhang, I.R. Fisher, Z. Hussain, and Z.-X. Shen, Science 325, 178 (2009). Figure Captions: Fig.1. (a) Single crystal x -ray diffraction of BiSbT 3 cleaved along ( 00l) direction, Inset: Laue diffraction pattern (b) Le Bail refinement of powder XRD o...

work page 2009