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Digbijoy N. Nath

Identifiers

  • name variant Digbijoy N. Nath 0.60 · backfill

Papers (16)

  1. Investigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si physics.app-ph · 2018 · author #9
  2. Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity physics.app-ph · 2018 · author #6
  3. MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector physics.app-ph · 2018 · author #7
  4. Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics cond-mat.mtrl-sci · 2017 · author #8
  5. Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon cond-mat.mtrl-sci · 2017 · author #12
  6. High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector cond-mat.mes-hall · 2017 · author #7
  7. Surface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability cond-mat.mes-hall · 2015 · author #3
  8. Optical Phonon Limited High Field Transport in Layered Materials cond-mat.mtrl-sci · 2015 · author #5
  9. Electron mobility in InxGa1-xN channel HEMTs cond-mat.mtrl-sci · 2015 · author #2
  10. Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1 cond-mat.mtrl-sci · 2014 · author #2
  11. Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions cond-mat.mtrl-sci · 2014 · author #3
  12. Large Area Single Crystal (0001) Oriented MoS2 Thin Films cond-mat.mtrl-sci · 2013 · author #6
  13. Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion cond-mat.mtrl-sci · 2013 · author #3
  14. Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride cond-mat.mes-hall · 2011 · author #3
  15. Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure cond-mat.mtrl-sci · 2010 · author #1
  16. Polarization-engineered GaN/InGaN/GaN tunnel diodes cond-mat.mtrl-sci · 2010 · author #2

Mentions

  • 1508.03795 #3 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1508.02828 #5 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1504.04336 #2 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1405.2479 #2 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1402.1816 #3 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1302.3177 #6 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1301.1952 #3 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1109.2566 #3 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1009.2537 #1 · backfill · confidence 0.70 Digbijoy N. Nath
  • 1008.4124 #2 · backfill · confidence 0.70 Digbijoy N. Nath

Frequent Coauthors