Noise spectroscopy and 2D resistor-network simulations show that current fluctuations in VO2 Mott memristors increase sharply near the set and reset voltages because of stochastic metallic-insulating domain reconfiguration at the percolation threshold.
Biological plausibility and stochasticity in scalable VO _2 active memristor neurons , volume =
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Annealing-optimized Ag/HZO memristors demonstrate artificial neurons with TTFS, spike-count, and firing-rate coding modes using minimal circuitry.
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Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO$_2$ devices
Noise spectroscopy and 2D resistor-network simulations show that current fluctuations in VO2 Mott memristors increase sharply near the set and reset voltages because of stochastic metallic-insulating domain reconfiguration at the percolation threshold.
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Multiple spiking functionalities in annealing-optimized Ag/Hf$_{0.5}$Zr$_{0.5}$O$_2$-based memristive neurons
Annealing-optimized Ag/HZO memristors demonstrate artificial neurons with TTFS, spike-count, and firing-rate coding modes using minimal circuitry.