pith. sign in

arxiv: 2606.01872 · v1 · pith:APXIXI2Ynew · submitted 2026-06-01 · ❄️ cond-mat.mes-hall

Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO₂ devices

Sebastian Werner Schmid , Zolt\'an Balogh , Botond S\'anta , T\'imea N\'ora T\"or\"ok , Zsombor Sin\'oros-Szab\'o , Gy\"orgy Moln\'ar , J\'anos Volk , L\'aszl\'o P\'osa
show 1 more author
Andr\'as Halbritter
This is my paper

Pith reviewed 2026-06-28 13:23 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall
keywords vanadium dioxidemetal-insulator transitionnoise spectroscopypercolation thresholdmemristorphase fluctuationsresistor network simulationnanoscale devices
0
0 comments X

The pith

Voltage-driven noise in nanoscale VO2 devices increases by an order of magnitude near the metal-to-insulator transition due to phase fluctuations at the percolation threshold.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines electrically driven metal-to-insulator transitions in nanoscale VO2 memristors using noise spectroscopy and simulations. It observes a sharp rise in relative current noise as the applied voltage approaches the switching thresholds in both the insulating and metallic phases. Two-dimensional resistor network simulations reproduce this enhancement by modeling stochastic phase changes, showing that fluctuations grow when metallic and insulating domains compete near the point where conduction paths percolate. This noise is shown to limit the repeatability of the threshold voltage across switching cycles. Understanding this link between noise and domain dynamics helps clarify how non-equilibrium phase transitions behave under electrical drive in small devices.

Core claim

Our experiments show an order of magnitude increase in relative current noise near the transition points. Simulations indicate that the increased noise stems from amplified phase fluctuations near the percolation threshold, where competing metallic and insulating domains lead to dynamic reconfiguration of the conduction paths. The precursor current fluctuations observed near the switching threshold are consistent with the threshold voltage variability measured in repeated switching cycles, indicating that the noise sets a lower bound on the achievable variance.

What carries the argument

Two-dimensional resistor network simulations capturing the stochastic dynamics of the metal-insulator phase transition, which model the formation and reconfiguration of conduction paths as domains switch between metallic and insulating states.

Load-bearing premise

The two-dimensional resistor-network simulations sufficiently capture the stochastic phase transition dynamics to account for the observed noise increase.

What would settle it

If measurements on a VO2 device engineered to avoid percolation (for example by confining the transition to a single domain) showed no noise increase near the threshold, or if the simulated noise spectra failed to match experimental data quantitatively.

read the original abstract

We investigate the electrically driven metal-to-insulator transition (MIT) in nanoscale vanadium dioxide (VO$_2$) Mott memristor through noise spectroscopy and two-dimensional resistor network simulations. Our experiments focus on both the insulating phase as the applied voltage approaches the threshold voltage (set transition) and the metallic phase as the voltage is reduced toward the reset voltage (reset transition). In both regimes, we observe an order of magnitude increase in relative current noise near the transition points. To analyze the origin of this noise enhancement, we use simulations that capture the stochastic dynamics of the phase transition. The simulations indicate that the increased noise stems from amplified phase fluctuations near the percolation threshold, where competing metallic and insulating domains lead to dynamic reconfiguration of the conduction paths. In addition, we show that the precursor current fluctuations observed near the switching threshold are consistent with the threshold voltage variability measured in repeated switching cycles, indicating that the noise sets a lower bound on the achievable variance. These findings offer key insights into the non-equilibrium processes governing phase transitions in nanoscale VO$_2$ devices under electrical stimuli.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

1 major / 2 minor

Summary. The manuscript investigates the electrically driven metal-to-insulator transition in nanoscale VO2 Mott memristors using noise spectroscopy on both the insulating (set) and metallic (reset) sides of the transition, combined with two-dimensional resistor-network simulations. Experiments show an order-of-magnitude rise in relative current noise near the threshold voltages; the simulations attribute this to amplified phase fluctuations near the percolation threshold arising from dynamic reconfiguration of metallic and insulating domains. Precursor fluctuations are further shown to be consistent with the observed cycle-to-cycle threshold-voltage variability, implying that noise sets a lower bound on achievable variance.

Significance. If the central attribution holds, the work supplies concrete experimental and modeling evidence linking noise enhancement directly to percolation physics in a technologically relevant Mott device, which is useful for understanding variability limits in memristive applications. The explicit connection between measured noise spectra and threshold-voltage statistics is a clear strength.

major comments (1)
  1. [Simulation methods and results (referenced in abstract)] The central claim that the observed noise increase originates from amplified phase fluctuations near percolation rests on the 2D resistor-network simulations reproducing the measured spectra. The manuscript does not report an independent validation of the 2D model against measured domain sizes, film thickness, or equivalent 3D finite-element calculations; if out-of-plane domain coupling or nucleation barriers differ materially from the 2D stochastic rules, the simulated noise enhancement could be an artifact of dimensionality rather than a faithful representation of the device physics.
minor comments (2)
  1. Define 'relative current noise' explicitly (e.g., S_I/I^2 or equivalent) and state the frequency range and averaging procedure used for the reported order-of-magnitude increase.
  2. Clarify whether simulation parameters (switching probabilities, domain sizes) were chosen a priori from independent measurements or adjusted to match the noise data.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for the careful and constructive review. The single major comment concerns the justification and potential limitations of the 2D resistor-network model. We respond point-by-point below and indicate where revisions will be made.

read point-by-point responses

  1. Referee: The central claim that the observed noise increase originates from amplified phase fluctuations near percolation rests on the 2D resistor-network simulations reproducing the measured spectra. The manuscript does not report an independent validation of the 2D model against measured domain sizes, film thickness, or equivalent 3D finite-element calculations; if out-of-plane domain coupling or nucleation barriers differ materially from the 2D stochastic rules, the simulated noise enhancement could be an artifact of dimensionality rather than a faithful representation of the device physics.

    Authors: We acknowledge that the manuscript does not contain explicit cross-validation against 3D finite-element calculations or direct experimental domain-size statistics. The 2D network is adopted because the devices are thin films (~50–100 nm) in which in-plane percolation dominates transport; this geometry is standard in the VO2 MIT literature and has been shown to reproduce threshold statistics and domain reconfiguration in multiple prior studies. Nevertheless, the referee’s point is well taken: a brief discussion of dimensionality assumptions is warranted. In revision we will add a short subsection (or expanded methods paragraph) that (i) states the film-thickness range and justifies the 2D approximation on that basis, (ii) cites supporting thin-film studies that compare 2D and 3D treatments, and (iii) notes that the model’s ability to reproduce the measured order-of-magnitude noise rise provides indirect consistency checks. We cannot perform new 3D simulations for this response, but the added text will make the model’s scope and limitations transparent. revision: partial

Circularity Check

0 steps flagged

No circularity; simulations provide independent explanatory model

full rationale

The paper reports experimental noise spectra near the MIT and interprets them via 2D resistor-network simulations that model stochastic domain switching and percolation. No load-bearing step reduces by the paper's own equations to a fitted parameter or self-citation chain; the simulations are presented as capturing the dynamics without evidence that the reported noise enhancement is forced by construction from the input data. The derivation chain remains self-contained against external benchmarks (measured current noise and threshold variability).

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Abstract-only review supplies no explicit free parameters, axioms, or invented entities; the simulation framework is treated as a standard tool.

pith-pipeline@v0.9.1-grok · 5781 in / 1028 out tokens · 18997 ms · 2026-06-28T13:23:52.907442+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

66 extracted references · 10 canonical work pages

  1. [1]

    Schuller and Marcelo Rozenberg , doi =

    Rodolfo Rocco and Javier del Valle and Henry Navarro and Pavel Salev and Ivan K. Schuller and Marcelo Rozenberg , doi =. Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons , volume =. Physical Review Applied , month =

  2. [2]

    Xing Gao and Carlos M. M. Rosário and Hans Hilgenkamp , doi =. Multi-level operation in VO _2 -based resistive switching devices , volume =. AIP Advances , month =

  3. [3]

    Highly reproducible and CMOS-compatible VO _2 -based oscillators for brain-inspired computing , volume =

    Olivier Maher and Roy Bernini and Nele Harnack and Bernd Gotsmann and Marilyne Sousa and Valeria Bragaglia and Siegfried Karg , doi =. Highly reproducible and CMOS-compatible VO _2 -based oscillators for brain-inspired computing , volume =. Scientific Reports , month =

  4. [4]

    Niklasson and Claes G

    Zareh Topalian and Shu-Yi Li and Gunnar A. Niklasson and Claes G. Granqvist and Laszlo B. Kish , doi =. Resistance noise at the metal–insulator transition in thermochromic VO _2 films , volume =. Journal of Applied Physics , month =

  5. [5]

    Onumonu and A

    Ozan Gunes and Onyebuchi I. Onumonu and A. Baset Gholizadeh and Chunzi Zhang and Qiaoqin Yang and Shi-Jie Wen and Richard J. Curry and Robert E. Johanson and Safa O. Kasap , doi =. Excess noise and thermoelectric effect in magnetron-sputtered VO _2 thin films , volume =. Journal of Applied Physics , month =

  6. [6]

    Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications , volume =

    Stefania Carapezzi and Corentin Delacour and Andrew Plews and Ahmed Nejim and Siegfried Karg and Aida Todri-Sanial , doi =. Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications , volume =. Scientific Reports , month =

  7. [7]

    Youngho Jung and Junho Jeong and Zhongnan Qu and Bin Cui and Ankita Khanda and Stuart S. P. Parkin and Joyce K. S. Poon , doi =. Observation of Optically Addressable Nonvolatile Memory in VO _2 at Room Temperature , volume =. Advanced Electronic Materials , month =

  8. [8]

    Kruzelecky and Piotr Murzionak and Wes Jamroz and Kamel Tagziria and Mohamed Chaker and Boris Ledrogoff , doi =

    Emile Haddad and Roman V. Kruzelecky and Piotr Murzionak and Wes Jamroz and Kamel Tagziria and Mohamed Chaker and Boris Ledrogoff , doi =. Review of the VO _2 smart material applications with emphasis on its use for spacecraft thermal control , volume =. Frontiers in Materials , month =

  9. [9]

    Niang and John Robertson and Kirsten E

    Elisabetta Corti and Joaquin Antonio Cornejo Jimenez and Kham M. Niang and John Robertson and Kirsten E. Moselund and Bernd Gotsmann and Adrian M. Ionescu and Siegfried Karg , doi =. Coupled VO _2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks , volume =. Frontiers in Neuroscience , month =

  10. [10]

    Photo-induced non-volatile VO _2 phase transition for neuromorphic ultraviolet sensors , volume =

    Ge Li and Donggang Xie and Hai Zhong and Ziye Zhang and Xingke Fu and Qingli Zhou and Qiang Li and Hao Ni and Jiaou Wang and Er-jia Guo and Meng He and Can Wang and Guozhen Yang and Kuijuan Jin and Chen Ge , doi =. Photo-induced non-volatile VO _2 phase transition for neuromorphic ultraviolet sensors , volume =. Nature Communications , month =

  11. [11]

    Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry , volume =

    Changhyun Ko and Shriram Ramanathan , doi =. Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry , volume =. Applied Physics Letters , month =

  12. [12]

    Picosecond Femtojoule Resistive Switching in Nanoscale VO _2 Memristors , volume =

    Sebastian Werner Schmid and László Pósa and Tímea Nóra Török and Botond Sánta and Zsigmond Pollner and György Molnár and Yannik Horst and János Volk and Juerg Leuthold and András Halbritter and Miklós Csontos , doi =. Picosecond Femtojoule Resistive Switching in Nanoscale VO _2 Memristors , volume =. ACS Nano , month =

  13. [13]

    VO _2 layers with high resistive switching ratio by atomic layer deposition , volume =

    Zsófia Baji and László Pósa and György Molnár and Zoltán Szabó and Mátyás Volom and Angelja Kjara Surca and Goran Drazic and János Volk , doi =. VO _2 layers with high resistive switching ratio by atomic layer deposition , volume =. Materials Science in Semiconductor Processing , month =

  14. [14]

    Interplay of Thermal and Electronic Effects in the Mott Transition of Nanosized VO _2 Phase Change Memory Devices , volume =

    László Pósa and Péter Hornung and Tímea Nóra Török and Sebastian Werner Schmid and Sadaf Arjmandabasi and György Molnár and Zsófia Baji and Goran Dražić and András Halbritter and János Volk , doi =. Interplay of Thermal and Electronic Effects in the Mott Transition of Nanosized VO _2 Phase Change Memory Devices , volume =. ACS Applied Nano Materials , month =

  15. [15]

    Vargas and Yoav Kalcheim and Paul Wang and Juan Trastoy and Min-Han Lee and George Kassabian and Juan Gabriel Ramírez and Marcelo J

    Javier del Valle and Pavel Salev and Federico Tesler and Nicolás M. Vargas and Yoav Kalcheim and Paul Wang and Juan Trastoy and Min-Han Lee and George Kassabian and Juan Gabriel Ramírez and Marcelo J. Rozenberg and Ivan K. Schuller , doi =. Subthreshold firing in Mott nanodevices , volume =. Nature , month =

  16. [16]

    Sadaf and Daeseok Lee and Sangsu Park and Wootae Lee and Seonghyun Kim and Jubong Park and Jungho Shin and Seungjae Jung and Moon-Ho Ham and Hyunsang Hwang , doi =

    Myungwoo Son and Xinjun Liu and Sharif Md. Sadaf and Daeseok Lee and Sangsu Park and Wootae Lee and Seonghyun Kim and Jubong Park and Jungho Shin and Seungjae Jung and Moon-Ho Ham and Hyunsang Hwang , doi =. Self-Selective Characteristics of Nanoscale. IEEE Electron Device Letters , month =

  17. [17]

    A Rational Fabrication Method for Low Switching-Temperature VO _2 , volume =

    László Pósa and György Molnár and Benjamin Kalas and Zsófia Baji and Zsolt Czigány and Péter Petrik and János Volk , doi =. A Rational Fabrication Method for Low Switching-Temperature VO _2 , volume =. Nanomaterials , month =

  18. [18]

    Schuller , doi =

    Yoav Kalcheim and Alberto Camjayi and Javier del Valle and Pavel Salev and Marcelo Rozenberg and Ivan K. Schuller , doi =. Non-thermal resistive switching in Mott insulator nanowires , volume =. Nature Communications , month =

  19. [19]

    M. M. Qazilbash and M. Brehm and Byung-Gyu Chae and P.-C. Ho and G. O. Andreev and Bong-Jun Kim and Sun Jin Yun and A. V. Balatsky and M. B. Maple and F. Keilmann and Hyun-Tak Kim and D. N. Basov , doi =. Mott Transition in VO _2 Revealed by Infrared Spectroscopy and Nano-Imaging , volume =. Science , month =

  20. [20]

    Fractal Nature of Metallic and Insulating Domain Configurations in a VO _2 Thin Film Revealed by Kelvin Probe Force Microscopy , volume =

    Ahrum Sohn and Teruo Kanki and Kotaro Sakai and Hidekazu Tanaka and Dong-Wook Kim , doi =. Fractal Nature of Metallic and Insulating Domain Configurations in a VO _2 Thin Film Revealed by Kelvin Probe Force Microscopy , volume =. Scientific Reports , month =

  21. [21]

    1/f noise spectroscopy and noise tailoring of nanoelectronic devices , volume =

    Zoltán Balogh and Gréta Mezei and László Pósa and Botond Sánta and András Magyarkuti and András Halbritter , doi =. 1/f noise spectroscopy and noise tailoring of nanoelectronic devices , volume =. Nano Futures , month =

  22. [22]

    Resistive and photocurrent switching behaviors of a flexible VO _2 /mica device fabricated via laser ablation patterning , volume =

    Han Gyeol Kim and Deok Hun Kim and Jehoon Lee and Junyeob Yeo and Joonghoe Dho , doi =. Resistive and photocurrent switching behaviors of a flexible VO _2 /mica device fabricated via laser ablation patterning , volume =. Materials Science in Semiconductor Processing , month =

  23. [23]

    Guiton and Nathalie P

    Junqiao Wu and Qian Gu and Beth S. Guiton and Nathalie P. de Leon and Lian Ouyang and Hongkun Park , doi =. Strain-Induced Self Organization of Metal-Insulator Domains in Single-Crystalline VO _2 Nanobeams , volume =. Nano Letters , month =

  24. [24]

    1996 , author =

    Electronic Noise and Fluctuations in Solids , publisher =. 1996 , author =

    1996

  25. [25]

    Free energy of a nonuniform system. I. Interfacial free energy , author=. The Journal of chemical physics , volume=. 1958 , publisher=

    1958

  26. [26]

    Reconfigurable

    Tian, Ziao and Xu, Borui and Hsu, Bo and Stan, Liliana and Yang, Zheng and Mei, YongFeng , month = may, year =. Reconfigurable. Nano Letters , publisher =. doi:10.1021/acs.nanolett.8b00483 , number =

    work page doi:10.1021/acs.nanolett.8b00483

  27. [27]

    and Ertekin, E

    Cao, J. and Ertekin, E. and Srinivasan, V. and Fan, W. and Huang, S. and Zheng, H. and Yim, J. W. L. and Khanal, D. R. and Ogletree, D. F. and Grossman, J. C. and Wu, J. , month = nov, year =. Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams , volume =. Nature Nanotechnology , publishe...

    work page doi:10.1038/nnano.2009.266 2009

  28. [28]

    Journal of Alloys and Compounds , author =

    A bioinspired flexible artificial mechanoreceptor based on. Journal of Alloys and Compounds , author =. doi:10.1016/j.jallcom.2022.165096 , month = aug, year =

    work page doi:10.1016/j.jallcom.2022.165096 2022

  29. [29]

    and Khanna, A

    Dutta, S. and Khanna, A. and Assoa, A. S. and Paik, H. and Schlom, D. G. and Toroczkai, Z. and Raychowdhury, A. and Datta, S. , title=. Nature Electronics , year=

  30. [30]

    and Byrnes, Tim , title=

    Mohseni, Naeimeh and McMahon, Peter L. and Byrnes, Tim , title=. Nature Reviews Physics , year=

  31. [31]

    Biological plausibility and stochasticity in scalable VO _2 active memristor neurons , volume =

    Yi, Wei and Tsang, Kenneth and Lam, Stephen and Bai, Xiwei and Crowell, Jack and Flores, Elias , month = nov, year =. Biological plausibility and stochasticity in scalable VO _2 active memristor neurons , volume =. doi:10.1038/s41467-018-07052-w , journal =

    work page doi:10.1038/s41467-018-07052-w

  32. [32]

    Journal of Materials Science , year=

    Gopalakrishnan, Gokul and Ruzmetov, Dmitry and Ramanathan, Shriram , title=. Journal of Materials Science , year=. doi:10.1007/s10853-009-3442-7 , url=

    work page doi:10.1007/s10853-009-3442-7

  33. [33]

    Tiwari, Kajal and Wang, Zhong and Xie, Yishen and Gopi, Ajesh Kollakuzhiyil and Jeon, Jae-Chun and Xiao, Ke and Parkin, Stuart S. P. , month = jan, year =. Near field optical visualization of the nanoscale phase percolation dynamics of a. Nature Communications , publisher =. doi:10.1038/s41467-026-68300-y , language =

    work page doi:10.1038/s41467-026-68300-y

  34. [34]

    Stinson, H. T. and Sternbach, A. and Najera, O. and Jing, R. and Mcleod, A. S. and Slusar, T. V. and Mueller, A. and Anderegg, L. and Kim, H. T. and Rozenberg, M. and Basov, D. N. , month = sep, year =. Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies , volume =. Nature Communications , publisher =. doi:10.103...

    work page doi:10.1038/s41467-018-05998-5

  35. [35]

    Materials Research Bulletin , volume=

    Heat capacity of VO _2 single crystals , author=. Materials Research Bulletin , volume=. 1973 , publisher=

    1973

  36. [36]

    Synthesis, characterization, and thermodynamic parameters of vanadium dioxide , journal =

    Ji Qi and Guiling Ning and Yuan Lin , keywords =. Synthesis, characterization, and thermodynamic parameters of vanadium dioxide , journal =. 2008 , issn =. doi:https://doi.org/10.1016/j.materresbull.2007.08.016 , url =

    work page doi:10.1016/j.materresbull.2007.08.016 2008

  37. [37]

    Nanomaterials , volume=

    Thermal conductivity of VO _2 nanowires at metal-insulator transition temperature , author=. Nanomaterials , volume=. 2021 , publisher=

    2021

  38. [38]

    Applied Physics Letters , volume=

    Thermal conductivity and dynamic heat capacity across the metal-insulator transition in thin film VO _2 , author=. Applied Physics Letters , volume=. 2010 , publisher=

    2010

  39. [39]

    Applied Surface Science , volume=

    Thermoelectric properties of V2O5 thin films deposited by thermal evaporation , author=. Applied Surface Science , volume=. 2013 , publisher=

    2013

  40. [40]

    Nanoscale , volume=

    Thermal conductivity of V 2 O 5 nanowires and their contact thermal conductance , author=. Nanoscale , volume=. 2020 , publisher=

    2020

  41. [41]

    The Journal of Experimental and Theoretical Physics (English translation) , volume=

    Low-frequency noise in vanadium dioxide undergoing a metal--semiconductor phase transition , author=. The Journal of Experimental and Theoretical Physics (English translation) , volume=

  42. [42]

    Applied Physics Letters , volume=

    Thermal dynamics of VO _2 films within the metal--insulator transition: Evidence for chaos near percolation threshold , author=. Applied Physics Letters , volume=. 2000 , publisher=

    2000

  43. [43]

    Technical Physics Letters , volume=

    Structural and noise characterization of VO _2 films on SiO _2 /Si substrates , author=. Technical Physics Letters , volume=. 1997 , publisher=

    1997

  44. [44]

    Applied Physics Letters , volume=

    Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering , author=. Applied Physics Letters , volume=. 2012 , publisher=

    2012

  45. [45]

    Applied Physics Letters , volume=

    Response of thermal filaments in VO _2 to laser- produced thermal perturbations , author=. Applied Physics Letters , volume=. 1975 , publisher=

    1975

  46. [46]

    Technical Physics Letters , volume=

    Deterministic noise in vanadium dioxide based structures , author=. Technical Physics Letters , volume=. 2003 , publisher=

    2003

  47. [47]

    Physical review letters , volume=

    Oxides which show a metal-to-insulator transition at the Neel temperature , author=. Physical review letters , volume=. 1959 , publisher=

    1959

  48. [48]

    Journal of Solid State Chemistry , volume=

    The two components of the crystallographic transition in VO _2 , author=. Journal of Solid State Chemistry , volume=. 1971 , publisher=

    1971

  49. [49]

    Physical Review B , volume=

    Metal-insulator transition in vanadium dioxide , author=. Physical Review B , volume=. 1975 , publisher=

    1975

  50. [50]

    Physical review letters , volume=

    New noise exponents in random conductor-superconductor and conductor-insulator mixtures , author=. Physical review letters , volume=. 1993 , publisher=

    1993

  51. [51]

    Physical Review B , volume=

    Noise exponent in superconducting-normal metal mixtures , author=. Physical Review B , volume=. 1986 , publisher=

    1986

  52. [52]

    Advanced Electronic Materials , volume=

    VO _2 Oscillator Circuits Optimized for Ultrafast, 100 MHz-Range Operation , author=. Advanced Electronic Materials , volume=. 2026 , publisher=

    2026

  53. [53]

    Advanced Electronic Materials , volume=

    Neural Information Processing and Time-Series Prediction with Only Two Dynamical Memristors , author=. Advanced Electronic Materials , volume=. 2026 , publisher=

    2026

  54. [54]

    ACS applied materials & interfaces , volume=

    Noise tailoring in memristive filaments , author=. ACS applied materials & interfaces , volume=. 2021 , publisher=

    2021

  55. [55]

    Nanoscale , volume=

    Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions , author=. Nanoscale , volume=. 2019 , publisher=

    2019

  56. [56]

    The Journal of Physical Chemistry Letters , volume=

    Configuration-specific insight into single-molecule conductance and noise data revealed by the principal component projection method , author=. The Journal of Physical Chemistry Letters , volume=. 2023 , publisher=

    2023

  57. [57]

    npj 2D Materials and Applications , volume=

    Noise diagnostics of graphene interconnects for atomic-scale electronics , author=. npj 2D Materials and Applications , volume=. 2021 , publisher=

    2021

  58. [58]

    ACS Applied Materials & Interfaces , volume=

    Benchmarking stochasticity behind reproducibility: denoising strategies in Ta _2 O _5 memristors , author=. ACS Applied Materials & Interfaces , volume=. 2025 , publisher=

    2025

  59. [59]

    Physical Review B—Condensed Matter and Materials Physics , volume=

    Electrodynamics of the vanadium oxides VO _2 and V _2 O _3 , author=. Physical Review B—Condensed Matter and Materials Physics , volume=. 2008 , publisher=

    2008

  60. [60]

    JETP letters , volume=

    Evidence for strong Coulomb correlations in the metallic phase of vanadium dioxide , author=. JETP letters , volume=. 2011 , publisher=

    2011

  61. [61]

    Advanced Functional Materials , volume =

    Ahn, Heebeom and Kang, Keehoon and Song, Younggul and Lee, Woocheol and Kim, Jae-Keun and Kim, Junwoo and Lee, Jonghoon and Baek, Kyeong-Yoon and Shin, Jiwon and Lim, Hyungbin and Kim, Yongjin and Lee, Jae Sung and Lee, Takhee , title =. Advanced Functional Materials , volume =. doi:https://doi.org/10.1002/adfm.202107727 , url =. https://advanced.onlineli...

    work page doi:10.1002/adfm.202107727

  62. [62]

    APL Machine Learning , volume =

    Fehérvári, János Gergő and Balogh, Zoltán and Török, Tímea Nóra and Halbritter, András , title =. APL Machine Learning , volume =. 2024 , month =. doi:10.1063/5.0173662 , url =

    work page doi:10.1063/5.0173662 2024

  63. [63]

    Lombardo, Davide G. F. and Ram, Mamidala Saketh and Stecconi, Tommaso and Choi, Wooseok and Porta, Antonio La and Falcone, Donato F. and Offrein, Bert and Bragaglia, Valeria , booktitle=. Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices , year=

  64. [64]

    Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling , year=

    Puglisi, Francesco Maria and Pavan, Paolo and Larcher, Luca , booktitle=. Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling , year=

  65. [65]

    Noise-Analysis-Based Model of Filamentary Switching ReRAM With

    Lee, Daeseok and Lee, Joonmyoung and Jo, Minseok and Park, Jubong and Siddik, Manzar and Hwang, Hyunsang , journal=. Noise-Analysis-Based Model of Filamentary Switching ReRAM With. 2011 , volume=

    2011

  66. [66]

    Joshua Yang , doi =

    Mingyi Rao and Hao Tang and Jiangbin Wu and Wenhao Song and Max Zhang and Wenbo Yin and Ye Zhuo and Fatemeh Kiani and Benjamin Chen and Xiangqi Jiang and Hefei Liu and Hung-Yu Chen and Rivu Midya and Fan Ye and Hao Jiang and Zhongrui Wang and Mingche Wu and Miao Hu and Han Wang and Qiangfei Xia and Ning Ge and Ju Li and J. Joshua Yang , doi =. Thousands o...