Noise spectroscopy and 2D resistor-network simulations show that current fluctuations in VO2 Mott memristors increase sharply near the set and reset voltages because of stochastic metallic-insulating domain reconfiguration at the percolation threshold.
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Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO$_2$ devices
Noise spectroscopy and 2D resistor-network simulations show that current fluctuations in VO2 Mott memristors increase sharply near the set and reset voltages because of stochastic metallic-insulating domain reconfiguration at the percolation threshold.