Integrating thin InSe with a Mie-resonant Si3N4 waveguide reduces excitonic decay time by a factor of up to three, yielding Purcell factors of approximately 3 for out-of-plane and 2.1 for in-plane excitons.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Purcell enhancement in layered InSe on the Mie-resonant silicon nitride waveguide
Integrating thin InSe with a Mie-resonant Si3N4 waveguide reduces excitonic decay time by a factor of up to three, yielding Purcell factors of approximately 3 for out-of-plane and 2.1 for in-plane excitons.