Micromagnetic simulations show that asymmetry in SAF layers of 30 nm p-STT-MRAM nanopillars reduces required interlayer coupling for antiparallel states and modifies energy barriers, with stray fields playing a significant role.
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Magnetization alignment in spin-transfer-torque magnetic random-access memory
Micromagnetic simulations show that asymmetry in SAF layers of 30 nm p-STT-MRAM nanopillars reduces required interlayer coupling for antiparallel states and modifies energy barriers, with stray fields playing a significant role.