Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
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Pressure up to 15.6 GPa collapses the bandgap in 2H-MoTe2 into a semimetallic state, replacing variable-range hopping with weak localization and antilocalization while a phenomenological model unifies the magnetoresistance across regimes.
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Beyond the interface: Persistent Hopping Transport and Frequency Dispersion in Strong-inversion Cryogenic MOSFETs
Cryogenic MOSFETs show persistent frequency dispersion in strong inversion due to ionized-impurity-induced variable-range hopping in band-tail states distributed throughout the depletion region rather than confined to the interface.
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Pressure-Tuned Competing Electronic States in Layered Tellurides
Pressure up to 15.6 GPa collapses the bandgap in 2H-MoTe2 into a semimetallic state, replacing variable-range hopping with weak localization and antilocalization while a phenomenological model unifies the magnetoresistance across regimes.