Dislocations in (011) β-Ga₂O₃ substrates lie on (001) planes along [010], form arrays at domain boundaries, and produce ~10^{-5} rad misorientations detectable by XRT and reticulography.
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X-ray topography shows high crystalline quality (26 arcsec FWHM) beneath the seed in OCCC-grown β-Ga2O3 with <010> screw dislocations at ~10^5 cm^{-2} and twist misorientation during diameter enlargement.
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Dislocations in (011)-oriented vertical Bridgman $\beta$-Ga$_2$O$_3$ substrates
Dislocations in (011) β-Ga₂O₃ substrates lie on (001) planes along [010], form arrays at domain boundaries, and produce ~10^{-5} rad misorientations detectable by XRT and reticulography.
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Synchrotron-radiation X-ray topography and reticulography of bulk $\beta$-Ga$_2$O$_3$ crystals grown by the cold crucible method
X-ray topography shows high crystalline quality (26 arcsec FWHM) beneath the seed in OCCC-grown β-Ga2O3 with <010> screw dislocations at ~10^5 cm^{-2} and twist misorientation during diameter enlargement.