Monolithically integrated InGaAs/GaAs quantum dot on silicon produces energy-time entangled photons under two-photon excitation, with two-photon interference visibilities up to 64% in short time windows.
High -performance semiconductor quantum -dot single -photon sources
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Numerical modeling and experimental demonstration of lasing in quantum-dot micropillar lasers up to 220 K with a hybrid top mirror achieving Q-factor ~65000 and threshold ~2.2 mW.
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Energy-time entanglement from a monolithically integrated quantum dot on silicon
Monolithically integrated InGaAs/GaAs quantum dot on silicon produces energy-time entangled photons under two-photon excitation, with two-photon interference visibilities up to 64% in short time windows.