MD simulations of C1-xBx diamond find linear growth in lattice constant and (110)/(100) interplanar distances with boron concentration, deviating from Vegard's law more than prior studies due to higher simulated crystal quality.
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Simulations of 855 MeV electrons in a boron-doped diamond hetero-crystal show that angular divergence, beam orientation, radiation detection direction, and doping profiles strongly affect channeling and crystalline undulator radiation intensity, achieving good agreement with experiment while noting
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Structural effects of boron doping in diamond crystals for gamma-ray light-source applications: Insights from molecular dynamics simulations
MD simulations of C1-xBx diamond find linear growth in lattice constant and (110)/(100) interplanar distances with boron concentration, deviating from Vegard's law more than prior studies due to higher simulated crystal quality.
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The impact of experimental conditions on the observation of channeling and crystalline undulator radiation
Simulations of 855 MeV electrons in a boron-doped diamond hetero-crystal show that angular divergence, beam orientation, radiation detection direction, and doping profiles strongly affect channeling and crystalline undulator radiation intensity, achieving good agreement with experiment while noting