The apparent high dielectric permittivity anomaly in ScAlN is resolved by inverting the electromechanical relation ε_eff = ε_33^S + e_33²/C_33 using first-principles piezoelectric and elastic tensors to recover the true clamped value from experimental thin-film data.
ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate,
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Phase-contrast microscopy detects threading dislocations with in-plane Burgers vectors in GaN and enables 3D visualization by focal plane adjustment, validated against multiphoton photoluminescence imaging.
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The high K anomaly in ScAlN explained
The apparent high dielectric permittivity anomaly in ScAlN is resolved by inverting the electromechanical relation ε_eff = ε_33^S + e_33²/C_33 using first-principles piezoelectric and elastic tensors to recover the true clamped value from experimental thin-film data.
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High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with in-Plane Burgers Vector Component via Phase-Contrast Microscopy
Phase-contrast microscopy detects threading dislocations with in-plane Burgers vectors in GaN and enables 3D visualization by focal plane adjustment, validated against multiphoton photoluminescence imaging.
- Morphological Transition: From Meanders to Mound Structures