DFT plus Monte Carlo simulations predict itinerant ferromagnetism with Tc exceeding 160 K in p-doped MoS2 monolayers at 9% V concentration.
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DFT calculations on As-doped MoS2 monolayers find defect-induced midgap states and Fermi level shifts that produce p-type behavior for most substitutions and n-type for interstitial As, with suggested uses in photovoltaics and FETs.
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Itinerant Ferromagnetism in p-doped Monolayers of MoS2
DFT plus Monte Carlo simulations predict itinerant ferromagnetism with Tc exceeding 160 K in p-doped MoS2 monolayers at 9% V concentration.