Monolithically integrated InGaAs/GaAs quantum dot on silicon produces energy-time entangled photons under two-photon excitation, with two-photon interference visibilities up to 64% in short time windows.
Journal of Crystal Growth , volume =
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Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.
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Energy-time entanglement from a monolithically integrated quantum dot on silicon
Monolithically integrated InGaAs/GaAs quantum dot on silicon produces energy-time entangled photons under two-photon excitation, with two-photon interference visibilities up to 64% in short time windows.
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Localized Excitonic Emission in Wafer-Scale MOCVD-Grown GaSe 2D Nanosheets for Classical and Non-Classical Light Sources
Wafer-scale MOCVD-grown GaSe 2D nanosheets show defect-induced localized emission with single-photon character (g2(0)=0.15) suitable for classical and non-classical light sources.