A reduced electrothermal model with stochastic terms and an absorbing boundary broadens the SEB threshold into a probabilistic band and predicts noise-induced subthreshold runaway.
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Stochastic first-passage modeling of single-event burnout in SiC power MOSFETs
A reduced electrothermal model with stochastic terms and an absorbing boundary broadens the SEB threshold into a probabilistic band and predicts noise-induced subthreshold runaway.