Monolithically integrated InGaAs/GaAs quantum dot on silicon produces energy-time entangled photons under two-photon excitation, with two-photon interference visibilities up to 64% in short time windows.
Quantum key distribution using quantum dot single-photon emitting diodes in the red and near infrared spectral range , volume =
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A thin SiO2 cap modifies the surface chemistry of reactive or non-selective masks to achieve SiO2-like selectivity in III-V MBE without degrading optical response.
citing papers explorer
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Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials
A thin SiO2 cap modifies the surface chemistry of reactive or non-selective masks to achieve SiO2-like selectivity in III-V MBE without degrading optical response.