High-energy transitions in monolayer WSe2 show delayed dynamics relative to lower-energy excitons, attributed via transient absorption and first-principles calculations to phonon-mediated formation of momentum-dark excitons.
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3 Pith papers cite this work. Polarity classification is still indexing.
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cond-mat.mtrl-sci 3years
2026 3verdicts
UNVERDICTED 3representative citing papers
Pretrained UMA model reproduces chemisorbed S and O coverage under 15 eV O+ and O2+ bombardment on WS2 without fine-tuning; fine-tuning lowers energy MAE to 4.5e-3 eV/atom and force MAE to 0.076 eV/Å.
DFT calculations on As-doped MoS2 monolayers find defect-induced midgap states and Fermi level shifts that produce p-type behavior for most substitutions and n-type for interstitial As, with suggested uses in photovoltaics and FETs.
citing papers explorer
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Nonequilibrium dynamics of high energy transitions in monolayer WSe$_{2}$
High-energy transitions in monolayer WSe2 show delayed dynamics relative to lower-energy excitons, attributed via transient absorption and first-principles calculations to phonon-mediated formation of momentum-dark excitons.
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Fine-Tuning a Universal Machine-Learned Interatomic Potential for Oxygen Plasma Interactions with WS$_2$
Pretrained UMA model reproduces chemisorbed S and O coverage under 15 eV O+ and O2+ bombardment on WS2 without fine-tuning; fine-tuning lowers energy MAE to 4.5e-3 eV/atom and force MAE to 0.076 eV/Å.
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT calculations on As-doped MoS2 monolayers find defect-induced midgap states and Fermi level shifts that produce p-type behavior for most substitutions and n-type for interstitial As, with suggested uses in photovoltaics and FETs.