Altermagnets exhibit a resonant third-order intrinsic anomalous Hall effect from the Berry curvature quadrupole, serving as a quantum geometric transport fingerprint.
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Antiferromagnetic skyrmions exhibit bidirectional motion under current-induced torques above a threshold due to competing effective forces, enabling logic gates.
CsCr3Sb5's 4x1 CDW state features antiferromagnetic Cr dimers whose fluctuations may mediate superconductivity.
Residual orbital magnetization governs the anomalous Hall effect in altermagnets via the Středa relation and a crystal-field plus spin-orbit coupling mechanism in MnTe-type materials.
Strain engineering drives altermagnetic-to-ferrimagnetic transitions and activates anomalous transport responses in RuO2 and MnF2 via symmetry breaking.
citing papers explorer
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Third-order intrinsic anomalous Hall effect as a transport fingerprint of altermagnets
Altermagnets exhibit a resonant third-order intrinsic anomalous Hall effect from the Berry curvature quadrupole, serving as a quantum geometric transport fingerprint.
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Bidirectional motion of antiferromagnetic skyrmions driven by competing spin torques
Antiferromagnetic skyrmions exhibit bidirectional motion under current-induced torques above a threshold due to competing effective forces, enabling logic gates.
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Antiferromagnetic Dimers in the Parent Phase of a Correlated Kagome Superconductor
CsCr3Sb5's 4x1 CDW state features antiferromagnetic Cr dimers whose fluctuations may mediate superconductivity.
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Residual orbital magnetization governs the anomalous Hall effect in altermagnets
Residual orbital magnetization governs the anomalous Hall effect in altermagnets via the Středa relation and a crystal-field plus spin-orbit coupling mechanism in MnTe-type materials.
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Strain induced magnetic phase transition and anomalous transport phenomena in RuO$_2$ and MnF$_2$
Strain engineering drives altermagnetic-to-ferrimagnetic transitions and activates anomalous transport responses in RuO2 and MnF2 via symmetry breaking.