Thin-film BTO SAW resonators achieve k2eff of 0.14 at 5.2 GHz with d33eff of 53 pC/N at room temperature and 19 pC/N at millikelvin, plus fast low-voltage switching.
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Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.
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Piezoelectric resonators in thin-film barium titanate from room temperature to millikelvin
Thin-film BTO SAW resonators achieve k2eff of 0.14 at 5.2 GHz with d33eff of 53 pC/N at room temperature and 19 pC/N at millikelvin, plus fast low-voltage switching.