The authors unify spin space group and magnetic space group frameworks through oriented SSGs to classify magnetic orders by net magnetization constraints and identify spin-orbit magnetism as a phase where magnetization is induced by spin-orbit coupling.
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4 Pith papers cite this work. Polarity classification is still indexing.
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UNVERDICTED 4representative citing papers
In FePS3, magnetoelastic reconstruction of zigzag transport paths under strain yields giant magnetoresistance up to 10^4% and large energy-independent Hall ratios.
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.
citing papers explorer
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Symmetry Classification of Magnetic Orders using Oriented Spin Space Groups
The authors unify spin space group and magnetic space group frameworks through oriented SSGs to classify magnetic orders by net magnetization constraints and identify spin-orbit magnetism as a phase where magnetization is induced by spin-orbit coupling.
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Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet
In FePS3, magnetoelastic reconstruction of zigzag transport paths under strain yields giant magnetoresistance up to 10^4% and large energy-independent Hall ratios.
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Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
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Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.