In situ SEM-DIC and EBSD measurements on cold-worked AA-5052 show crack arrest coincides with divergence of elastic and elastoplastic energy release rates as the crack-tip process zone expands beyond grain size.
Resolving the fundamentals of the J-integral concept by multi-method in situ nanoscale stress-strain mapping
2 Pith papers cite this work. Polarity classification is still indexing.
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Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.
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Stoichiometric Epitaxial Strontium Titanate Thin Films on Silicon by High-Temperature Sr Segregation
Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.