Microwave resonator and DC transport measurements identify qualitative signatures of multilevel π-junctions in gate voltage and inductive/dissipative response in a Ge/SiGe quantum dot.
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Multi-level {\pi}-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Microwave resonator and DC transport measurements identify qualitative signatures of multilevel π-junctions in gate voltage and inductive/dissipative response in a Ge/SiGe quantum dot.